Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers
Brytavskyi, Ievgen, Hušeková, Kristína, Myndrul, Valerii, Pavlenko, Mykola, Coy, Emerson, Zaleski, Karol, Gregušová, Dagmar, Yate, Luis, Smyntyna, Valentyn, Iatsunskyi, Igor
Published in Applied surface science (31.03.2019)
Published in Applied surface science (31.03.2019)
Get full text
Journal Article
Mg Doping of N-Polar, In-Rich InAlN
Kuzmík, Ján, Pohorelec, Ondrej, Hasenöhrl, Stanislav, Blaho, Michal, Stoklas, Roman, Dobročka, Edmund, Rosová, Alica, Kučera, Michal, Gucmann, Filip, Gregušová, Dagmar, Precner, Marian, Vincze, Andrej
Published in Materials (10.03.2023)
Published in Materials (10.03.2023)
Get full text
Journal Article
Vertical GaN Transistor with Semi‐Insulating Channel
Šichman, Peter, Stoklas, Roman, Hasenöhrl, Stanislav, Gregušová, Dagmar, Ťapajna, Milan, Hudec, Boris, Haščík, Štefan, Hashizume, Tamotsu, Chvála, Aleš, Šatka, Alexander, Kuzmík, Ján
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
Get full text
Journal Article
GaAs Nanomembranes in the High Electron Mobility Transistor Technology
Gregušová, Dagmar, Dobročka, Edmund, Eliáš, Peter, Stoklas, Roman, Blaho, Michal, Pohorelec, Ondrej, Haščík, Štefan, Kučera, Michal, Kúdela, Róbert
Published in Materials (22.06.2021)
Published in Materials (22.06.2021)
Get full text
Journal Article
Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs
Gregušová, Dagmar, Blaho, Michal, Haščík, Štefan, Šichman, Peter, Laurenčíková, Agáta, Seifertová, Alena, Dérer, Ján, Brunner, Frank, Würfl, Joachim, Kuzmík, Ján
Published in Physica status solidi. A, Applications and materials science (01.11.2017)
Published in Physica status solidi. A, Applications and materials science (01.11.2017)
Get full text
Journal Article
Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off
Gucmann, Filip, Meng, Biwei, Chvála, Aleš, Kúdela, Róbert, Yuan, Chao, Ťapajna, Milan, Florovič, Martin, Egyenes, Fridrich, Eliáš, Peter, Hrubišák, Fedor, Kováč, Jaroslav, Fedor, Ján, Gregušová, Dagmar
Published in ACS applied electronic materials (19.07.2024)
Published in ACS applied electronic materials (19.07.2024)
Get full text
Journal Article
InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region
Gregušová, Dagmar, Tóth, Lajos, Pohorelec, Ondrej, Hasenöhrl, Stanislav, Haš ík, Štefan, Cora, Ildikó, Fogarassy, Zsolt, Stoklas, Roman, Seifertová, Alena, Blaho, Michal, Lauren íková, Agáta, Oyobiki, Tatsuya, Pécz, Béla, Hashizume, Tamotsu, Kuzmík, Ján
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
Get full text
Journal Article
ZrO2/InAlN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions
Gregušová, Dagmar, Hušeková, Kristína, Stoklas, Roman, Blaho, Michal, Jurkovič, Michal, Carlin, Jean-Francois, Grandjean, Nicolas, Kordoš, Peter
Published in Jpn J Appl Phys (01.08.2013)
Published in Jpn J Appl Phys (01.08.2013)
Get full text
Journal Article
50-nm local anodic oxidation technology of semiconductor heterostructures
Martaus, Jozef, Cambel, Vladimír, Gregusová, Dagmar, Kúdela, Róbert, Fedor, Ján
Published in Journal of nanoscience and nanotechnology (01.07.2010)
Published in Journal of nanoscience and nanotechnology (01.07.2010)
Get more information
Journal Article
Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs
Blaho, Michal, Gregušová, Dagmar, Jurkovič, Michal, Haščík, Štefan, Fedor, Ján, Kordoš, Peter, Fröhlich, Karol, Brunner, Frank, Cho, Melani, Hilt, Oliver, Würfl, Joachim, Kuzmík, Ján
Published in Microelectronic engineering (01.12.2013)
Published in Microelectronic engineering (01.12.2013)
Get full text
Journal Article
New approach to local anodic oxidation of semiconductor heterostructures
Martaus, Jozef, Gregušová, Dagmar, Cambel, Vladimír, Kúdela, Robert, Šoltýs, Ján
Published in Ultramicroscopy (01.09.2008)
Published in Ultramicroscopy (01.09.2008)
Get full text
Journal Article
Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices
Cambel, Vladimír, Martaus, Jozef, Šoltýs, Ján, Kúdela, Robert, Gregušová, Dagmar
Published in Ultramicroscopy (01.09.2008)
Published in Ultramicroscopy (01.09.2008)
Get full text
Journal Article
Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal--Oxide--Semiconductor Heterostructure Field Effect Transistors
Gregušová, Dagmar, Gaži, Štefan, Sofer, Zdeněk, Stoklas, Roman, Dobročka, Edmund, Mikulics, Martin, Greguš, Ján, Novák, Jozef, Kordoš, Peter
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
Get full text
Journal Article
Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing
Čičo, Karol, Gregušová, Dagmar, Gaži, Štefan, Šoltýs, Ján, Kuzmík, Ján, Carlin, Jean-François, Grandjean, Nicolas, Pogany, Dionýz, Fröhlich, Karol
Published in Physica status solidi. C (01.01.2010)
Published in Physica status solidi. C (01.01.2010)
Get full text
Journal Article
Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors
Tapajna, Milan, Killat, Nicole, Palankovski, Vassil, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Kuball, Martin, Kuzmik, Jan
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
Get full text
Journal Article
Novel Hall sensors developed for magnetic field imaging systems
Cambel, Vladimír, Karapetrov, Goran, Novosad, Valentyn, Bartolomé, Elena, Gregušová, Dagmar, Fedor, Ján, Kúdela, Robert, Šoltýs, Ján
Published in Journal of magnetism and magnetic materials (01.09.2007)
Published in Journal of magnetism and magnetic materials (01.09.2007)
Get full text
Journal Article
Conference Proceeding
Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations
Chvala, Ales, Nagy, Lukas, Marek, Juraj, Priesol, Juraj, Donoval, Daniel, Blaho, Michal, Gregusova, Dagmar, Kuzmik, Jan, Satka, Alexander
Published in IEEE transactions on electron devices (01.06.2018)
Published in IEEE transactions on electron devices (01.06.2018)
Get full text
Journal Article