Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
von Haartman, M., Malm, B.G., Hellström, P.-E., Östling, M., Grasby, T.J., Whall, T.E., Parker, E.H.C., Lyutovich, K., Oehme, M., Kasper, E.
Published in Solid-state electronics (01.05.2007)
Published in Solid-state electronics (01.05.2007)
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Journal Article
Evidence of reduced self-heating in strained Si MOSFETs
Nicholas, G., Grasby, T.J., Parker, E.H.C., Whall, T.E., Skotnicki, T.
Published in IEEE electron device letters (01.09.2005)
Published in IEEE electron device letters (01.09.2005)
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Journal Article
SiGe(C) epitaxial technologies—issues and prospectives
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Journal Article
Conference Proceeding
High Mobility Strained Ge pMOSFETs With High- \kappa /Metal Gate
Nicholas, G., Grasby, T.J., Fulgoni, D.J.F., Beer, C.S., Parsons, J., Meuris, M., Heyns, M.M.
Published in IEEE electron device letters (01.09.2007)
Published in IEEE electron device letters (01.09.2007)
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Journal Article
High Mobility Strained Ge pMOSFETs With High-[kappa]/Metal Gate
Nicholas, G, Grasby, T.J, Fulgoni, D.J.F, Beer, C.S, Parsons, J, Meuris, M, Heyns, M.M
Published in IEEE electron device letters (01.09.2007)
Published in IEEE electron device letters (01.09.2007)
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Journal Article
Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates
Parsons, J., Beer, C.S., Leadley, D.R., Capewell, A.D., Grasby, T.J.
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Journal Article
Conference Proceeding
On the electron mobility enhancement in biaxially strained Si MOSFETs
Driussi, F., Esseni, D., Selmi, L., Hellström, P.-E., Malm, G., Ha˚llstedt, J., Östling, M., Grasby, T.J., Leadley, D.R., Mescot, X.
Published in Solid-state electronics (01.04.2008)
Published in Solid-state electronics (01.04.2008)
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Journal Article
Impact ionisation in strained SiGe pMOSFETs
NICHOLAS, G, DOBBIE, A, GRASBY, T. J, WHALL, T. E, PARKER, E. H. C
Published in Electronics letters (04.08.2005)
Published in Electronics letters (04.08.2005)
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Journal Article
Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs
Prest, M.J, Palmer, M.J, Grasby, T.J, Phillips, P.J, Mironov, O.A, Parker, E.H.C, Whall, T.E, Waite, A.M, Evans, A.G.R, Watling, J.R, Asenov, A, Barker, J.R
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2002)
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Journal Article
Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
PREST, M. J, PALMER, M. J, ASENOV, A, BARKER, J. R, GRASBY, T. J, PHILLIPS, P. J, MIRONOV, O. A, PARKER, E. H. C, WHALL, T. E, WAITE, A. M, EVANS, A. G. R, WATLING, J. R
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Conference Proceeding
Journal Article
Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise
Prest, M.J., Palmer, M.J., Braithwaite, G., Grasby, T.J., Phillips, P.J., Mironov, O.A., Parker, E.H.C., Whall, T.E., Waite, A.M., Evans, A.G.R.
Published in 31st European Solid-State Device Research Conference (2001)
Published in 31st European Solid-State Device Research Conference (2001)
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Conference Proceeding