Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for High-Frequency Applications
Malmkvist, M., Shumin Wang, Grahn, J.V.
Published in IEEE transactions on electron devices (01.01.2008)
Published in IEEE transactions on electron devices (01.01.2008)
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Journal Article
A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors
Sanden, M., Zhang, S.-L., Grahn, J.V., Ostling, M.
Published in IEEE transactions on electron devices (01.09.2000)
Published in IEEE transactions on electron devices (01.09.2000)
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Journal Article
Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition
Suvar, E, Radamson, H.H, Grahn, J.V
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Journal Article
Conference Proceeding
Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure
Suvar, E, Haralson, E, Radamson, H.H, Wang, Y.-B, Grahn, J.V, Malm, B.G, Östling, M
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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Journal Article
Conference Proceeding
A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
Grahn, J.V, Fosshaug, H, Jargelius, M, Jönsson, P, Linder, M, Malm, B.G, Mohadjeri, B, Pejnefors, J, Radamson, H.H, Sandén, M, Wang, Y.-B, Landgren, G, Östling, M
Published in Solid-state electronics (01.03.2000)
Published in Solid-state electronics (01.03.2000)
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Journal Article
On DC modeling of the base resistance in bipolar transistors
Linder, M, Ingvarson, F, Jeppson, K.O, Grahn, J.V, Zhang, S.-L, Östling, M
Published in Solid-state electronics (2000)
Published in Solid-state electronics (2000)
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Journal Article
Comparison of two High-Frequency Noise Characterization Methods for SiGe HBTs
Malm, B.G., Grahn, J.V., Ostling, M., Stenarson, J.
Published in 30th European Solid-State Device Research Conference (2000)
Published in 30th European Solid-State Device Research Conference (2000)
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Conference Proceeding
The effect of hydrogen passivation on electrical characteristics of double-polysilicon self-aligned bipolar transistors
Sandén, M, Karlin, T.E, Ma, P, Grahn, J.V, Zhang, S.-L, Östling, M
Published in Solid-state electronics (01.03.1999)
Published in Solid-state electronics (01.03.1999)
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Journal Article
Extraction of the intrinsic base region sheet resistance in bipolar transistors
Ingvarson, F., Linder, M., Jeppson, K.O., Zhang, S.-L., Grahn, J.V., Ostling, M.
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)
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Conference Proceeding
A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors
Sanden, M., Shi-Li Zhang, Grahn, J.V., Ostling, M.
Published in ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) (1999)
Published in ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) (1999)
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Conference Proceeding
A high speed SiGe HBT process using non-selective epitaxy and in situ phosphorus doped polysilicon emitter: Optimization of device design rules
Grahn, J.V., Malm, B.G., Mohadjeri, B., Pejnefors, J., Sanden, M., Wang, Y.-B., Radamson, H.H., Jonsson, P., Jargelius, M., Fosshaug, H., Linder, M., Landgren, G., Ostling, M.
Published in 29th European Solid-State Device Research Conference (1999)
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Published in 29th European Solid-State Device Research Conference (1999)
Conference Proceeding
A procedure for characterizing the BJT base resistance and Early voltages utilizing a dual base transistor test structure
Ingvarson, F., Linder, M., Jeppson, K.O., Shi-Li Zhang, Grahn, J.V., Ostling, M.
Published in ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) (2001)
Published in ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) (2001)
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Conference Proceeding
A new test structure for parasitic resistance extraction in bipolar transistors
Linder, M., Ingvarson, F., Jeppson, K.O., Shi-Li Zhang, Grahn, J.V., Ostling, M.
Published in ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) (2001)
Published in ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) (2001)
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Conference Proceeding
A new procedure for extraction of series resistances for bipolar transistors from DC measurements
Linder, M., Ingvarson, F., Jeppson, K.O., Grahn, J.V., Zhang, S.-L., Ostling, M.
Published in ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) (1999)
Published in ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) (1999)
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Conference Proceeding