Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
Celano, U, Giammaria, G, Goux, L, Belmonte, A, Jurczak, M, Vandervorst, W
Published in Nanoscale (21.07.2016)
Published in Nanoscale (21.07.2016)
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Journal Article
Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
Prócel, L. M., Trojman, L., Moreno, J., Crupi, F., Maccaronio, V., Degraeve, R., Goux, L., Simoen, E.
Published in Journal of applied physics (21.08.2013)
Published in Journal of applied physics (21.08.2013)
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Journal Article
Material relaxation in chalcogenide OTS SELECTOR materials
Clima, S., Garbin, D., Devulder, W., Keukelier, J., Opsomer, K., Goux, L., Kar, G.S., Pourtois, G.
Published in Microelectronic engineering (15.07.2019)
Published in Microelectronic engineering (15.07.2019)
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Journal Article
Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM
Belmonte, A., Celano, U., Degraeve, R., Fantini, A., Redolfi, A., Vandervorst, W., Houssa, M., Jurczak, M., Goux, L.
Published in IEEE electron device letters (01.08.2015)
Published in IEEE electron device letters (01.08.2015)
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Journal Article
Scalability of valence change memory: From devices to tip-induced filaments
Celano, U., Fantini, A., Degraeve, R., Jurczak, M., Goux, L., Vandervorst, W.
Published in AIP advances (01.08.2016)
Published in AIP advances (01.08.2016)
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Journal Article
Modeling of uniform switching RRAM devices and impact of critical defects
Subhechha, S., Degraeve, R., Roussel, P., Goux, L., Clima, S., De Meyer, K., Van Houdt, J., Kar, G.S.
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
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Journal Article
Optical transitions in single-wall boron nitride nanotubes
Lauret, J S, Arenal, R, Ducastelle, F, Loiseau, A, Cau, M, Attal-Tretout, B, Rosencher, E, Goux-Capes, L
Published in Physical review letters (28.01.2005)
Published in Physical review letters (28.01.2005)
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Journal Article
Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM
Chen, C. Y., Fantini, A., Goux, L., Gorine, G., Redolfi, A., Groeseneken, G., Jurczak, M.
Published in IEEE electron device letters (01.09.2016)
Published in IEEE electron device letters (01.09.2016)
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Journal Article
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
Goux, L., Raghavan, N., Fantini, A., Nigon, R., Strangio, S., Degraeve, R., Kar, G., Chen, Y. Y., De Stefano, F., Afanas'ev, V. V., Jurczak, M.
Published in Journal of applied physics (07.10.2014)
Published in Journal of applied physics (07.10.2014)
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Journal Article
Quantitative retention model for filamentary oxide-based resistive RAM
Degraeve, R., Chen, C.Y., Celano, U., Fantini, A., Goux, L., Linten, D., Kar, G.S.
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
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Journal Article
Design-technology co-optimization for OxRRAM-based synaptic processing unit
Mallik, A., Garbin, D., Fantini, A., Rodopoulos, D., Degraeve, R., Stuijt, J., Das, A. K., Schaafsma, S., Debacker, P., Donadio, G., Hody, H., Goux, L., Kar, G. S., Furnemont, A., Mocuta, A., Raghavan, P.
Published in 2017 Symposium on VLSI Technology (01.06.2017)
Published in 2017 Symposium on VLSI Technology (01.06.2017)
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Conference Proceeding
Statistical insight into controlled forming and forming free stacks for HfOx RRAM
Raghavan, N., Fantini, A., Degraeve, R., Roussel, P.J., Goux, L., Govoreanu, B., Wouters, D.J., Groeseneken, G., Jurczak, M.
Published in Microelectronic engineering (01.09.2013)
Published in Microelectronic engineering (01.09.2013)
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Journal Article
Towards barrier height modulation in HfO2/TiN by oxygen scavenging ― Dielectric defects or metal induced gap states?
PANTISANO, Luigi, AFANAS'EV, V. V, CIMINO, S, ADELMANN, C, GOUX, L, CHENA, Y. Y, KITTL, J. A, WOUTERS, D, JURCZAK, M
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Conference Proceeding
Journal Article
Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems
Goux, L., Opsomer, K., Franquet, A., Kar, G., Jossart, N., Richard, O., Wouters, D.J., Müller, R., Detavernier, C., Jurczak, M., Kittl, J.A.
Published in Thin solid films (30.04.2013)
Published in Thin solid films (30.04.2013)
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Journal Article
Conference Proceeding
Hydrogen-Induced Resistive Switching in TiN/ALD HfO2/PEALD TiN RRAM Device
YANG YIN CHEN, GOUX, L, SWERTS, J, TOELLER, M, ADELMANN, C, KITTL, J, JURCZAK, M, GROESENEKEN, G, WOUTERS, D. J
Published in IEEE electron device letters (01.04.2012)
Published in IEEE electron device letters (01.04.2012)
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Journal Article
Role of the anode material in the unipolar switching of TiN\NiO\Ni cells
Goux, L., Degraeve, R., Meersschaut, J., Govoreanu, B., Wouters, D. J., Kubicek, S., Jurczak, M.
Published in Journal of applied physics (07.02.2013)
Published in Journal of applied physics (07.02.2013)
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Journal Article
Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures
Courtade, L., Turquat, Ch, Muller, Ch, Lisoni, J.G., Goux, L., Wouters, D.J., Goguenheim, D., Roussel, P., Ortega, L.
Published in Thin solid films (01.04.2008)
Published in Thin solid films (01.04.2008)
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Journal Article