Chemical/mechanical balance management through pad microstructure in CMP
Yim, R., Perrot, C., Balan, V., Friot, P.-Y., Qian, B., Chiou, N., Jacob, G., Gourvest, E., Salvatore, F., Valette, S.
Published in Microelectronic engineering (05.08.2018)
Published in Microelectronic engineering (05.08.2018)
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Carbon-doped GeTe: A promising material for Phase-Change Memories
Betti Beneventi, G., Perniola, L., Sousa, V., Gourvest, E., Maitrejean, S., Bastien, J.C., Bastard, A., Hyot, B., Fargeix, A., Jahan, C., Nodin, J.F., Persico, A., Fantini, A., Blachier, D., Toffoli, A., Loubriat, S., Roule, A., Lhostis, S., Feldis, H., Reimbold, G., Billon, T., De Salvo, B., Larcher, L., Pavan, P., Bensahel, D., Mazoyer, P., Annunziata, R., Zuliani, P., Boulanger, F.
Published in Solid-state electronics (01.11.2011)
Published in Solid-state electronics (01.11.2011)
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Conference Proceeding
Combined spectroscopic ellipsometry and attenuated total reflection analyses of Al2O3/HfO2 nanolaminates
BONVALOT, M, KAHN, M, VALLEE, C, GOURVEST, E, ABED, H, JOREL, C, DUBOURDIEU, C
Published in Thin solid films (01.07.2010)
Published in Thin solid films (01.07.2010)
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Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
Fenouillet-Beranger, C., Perreau, P., Benoist, T., Richier, C., Haendler, S., Pradelle, J., Bustos, J., Brun, P., Tosti, L., Weber, O., Andrieu, F., Orlando, B., Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gregoire, M., Ducote, J., Gouraud, P., Margain, A., Borowiak, C., Bianchini, R., Planes, N., Gourvest, E., Bourdelle, K.K., Nguyen, B.Y., Poiroux, T., Skotnicki, T., Faynot, O., Boeuf, F.
Published in Solid-state electronics (01.10.2013)
Published in Solid-state electronics (01.10.2013)
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Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances
Ben Akkez, Imed, Fenouillet-Beranger, Claire, Cros, Antoine, Perreau, Pierre, Haendler, Sébatien, Weber, Olivier, Andrieu, François, Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gouraud, P., Margain, A., Borowiak, C., Gourvest, E., Bourdelle, K.K., Nguyen, B.Y., Poiroux, T., Skotnicki, Thomas, Faynot, Olivier, Balestra, Francis, Ghibaudo, Gérard, Boeuf, Fréderic
Published in Solid-state electronics (01.12.2013)
Published in Solid-state electronics (01.12.2013)
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Conference Proceeding
Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction
Beneventi, G Betti, Perniola, L, Fantini, A, Blachier, D, Toffoli, A, Gourvest, E, Maitrejean, S, Sousa, V, Jahan, C, Nodin, J F, Persico, A, Loubriat, S, Roule, A, Lhostis, S, Feldis, H, Reimbold, G, Billon, T, De Salvo, B, Larcher, L, Pavan, P, Bensahel, D, Mazoyer, P, Annunziata, R, Boulanger, F
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
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A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications
Boeuf, F., Cremer, S., Vulliet, N., Pinguet, T., Mekis, A., Masini, G., Verslegers, L., Sun, P., Ayazi, A., Hon, N-K, Sahni, S., Chi, Y., Orlando, B., Ristoiu, D., Farcy, A., Leverd, F., Broussous, L., Pelissier-Tanon, D., Richard, C., Pinzelli, L., Beneyton, R., Gourhant, O., Gourvest, E., Le-Friec, Y., Monnier, D., Brun, P., Guillermet, M., Benoit, D., Haxaire, K., Manouvrier, J. R., Jan, S., Petiton, H., Carpentier, J. F., Quemerais, T., Durand, C., Gloria, D., Fourel, M., Battegay, F., Sanchez, Y., Batail, E., Baron, F., Delpech, P., Salager, L., De Dobbelaere, P., Sautreuil, B.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Journal Article
Impact of Oxidation on Ge2Sb2Te5 and GeTe Phase-Change Properties
Gourvest, E., Pelissier, B., Vallée, C., Roule, A., Lhostis, S., Maitrejean, S.
Published in Journal of the Electrochemical Society (01.01.2012)
Published in Journal of the Electrochemical Society (01.01.2012)
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Journal Article
N-doped GeTe as performance booster for embedded Phase-Change Memories
Fantini, A, Sousa, V, Perniola, L, Gourvest, E, Bastien, J C, Maitrejean, S, Braga, S, Pashkov, N, Bastard, A, Hyot, B, Roule, A, Persico, A, Feldis, H, Jahan, C, Nodin, J F, Blachier, D, Toffoli, A, Reimbold, G, Fillot, F, Pierre, F, Annunziata, R, Benshael, D, Mazoyer, P, Vallée, C, Billon, T, Hazart, J, De Salvo, B, Boulanger, F
Published in 2010 International Electron Devices Meeting (01.01.2010)
Published in 2010 International Electron Devices Meeting (01.01.2010)
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Conference Proceeding
Impact of Oxidation on Ge 2 Sb 2 Te 5 and GeTe Phase-Change Properties
Gourvest, E., Pelissier, B., Vallée, C., Roule, A., Lhostis, S., Maitrejean, S.
Published in Journal of the Electrochemical Society (2012)
Published in Journal of the Electrochemical Society (2012)
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Journal Article
On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature
Beneventi, G B, Gourvest, E, Fantini, A, Perniola, L, Sousa, V, Maitrejean, S, Bastien, J C, Bastard, A, Fargeix, A, Hyot, B, Jahan, C, Nodin, J F, Persico, A, Blachier, D, Toffoli, A, Loubriat, S, Roule, A, Lhostis, S, Feldis, H, Reimbold, G, Billon, T, De Salvo, B, Larcher, L, Pavan, P, Bensahel, D, Mazoyer, P, Annunziata, R, Boulanger, F
Published in 2010 IEEE International Memory Workshop (2010)
Published in 2010 IEEE International Memory Workshop (2010)
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Conference Proceeding
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology: Selected extended papers from ULIS 2012 conference
FENOUILLET-BERANGER, C, PERREAU, P, ANDRIEU, F, ORLANDO, B, PELLISSIER-TANON, D, ABBATE, F, RICHARD, C, BENEYTON, R, GREGOIRE, M, DUCOTE, J, GOURAUD, P, MARGAIN, A, BENOIST, T, BOROWIAK, C, BIANCHINI, R, PLANES, N, GOURVEST, E, BOURDELLE, K. K, NGUYEN, B. Y, POIROUX, T, SKOTNICKI, T, FAYNOT, O, BOEUF, F, RICHIER, C, HAENDLER, S, PRADELLE, J, BUSTOS, J, BRUN, P, TOSTI, L, WEBER, O
Published in Solid-state electronics (2013)
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Published in Solid-state electronics (2013)
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Plasma Dicing Integration Schemes for Scribe Lane Layout and the Impact on Die Strength
Parker, David, Gourvest, Emmanuel, Bouillard, Boris
Published in 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) (01.05.2019)
Published in 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) (01.05.2019)
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Conference Proceeding
Impact of 45° rotated substrate on UTBOX FDSOI high-k metal gate technology
Ben Akkez, I., Fenouillet-Beranger, C., Cros, A., Perreau, P., Haendler, S., Weber, O., Andrieu, F., Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gouraud, P., Margain, A., Borowiak, C., Gourvest, E., Bourdelle, K. K., Nguyen, B. Y., Poiroux, T., Skotnicki, T., Faynot, O., Balestra, F., Ghibaudo, G., Boeuf, F.
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
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Conference Proceeding
Experimental and Numerical Study on Silicon Die Strength and its Impact on Package Reliability
Gourvest, E., Raid, I., Robin, O., Trouiller, C., Gallois-Garregnot, S., Luan, J-E.
Published in 2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) (01.12.2018)
Published in 2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) (01.12.2018)
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A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives
Chevalier, P., Avenier, G., Ribes, G., Montagne, A., Canderle, E., Celi, D., Derrier, N., Deglise, C., Durand, C., Quemerais, T., Buczko, M., Gloria, D., Robin, O., Petitdidier, S., Campidelli, Y., Abbate, F., Gros-Jean, M., Berthier, L., Chapon, J. D., Leverd, F., Jenny, C., Richard, C., Gourhant, O., De-Buttet, C., Beneyton, R., Maury, P., Joblot, S., Favennec, L., Guillermet, M., Brun, P., Courouble, K., Haxaire, K., Imbert, G., Gourvest, E., Cossalter, J., Saxod, O., Tavernier, C., Foussadier, F., Ramadout, B., Bianchini, R., Julien, C., Ney, D., Rosa, J., Haendler, S., Carminati, Y., Borot, B.
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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Conference Proceeding
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
Fenouillet-Beranger, C., Perreau, P., Benoist, T., Richier, C., Haendler, S., Pradelle, J., Bustos, J., Brun, P., Tosti, L., Weber, O., Andrieu, F., Orlando, B., Pellissier-Tanon, D., Abbate, F., Pvichard, C., Beneyton, R., Gregoire, M., Ducote, J., Gouraud, P., Margain, A., Borowiak, C., Bianchini, R., Planes, N., Gourvest, E., Bourdelle, K. K., Nguyen, B. Y., Poiroux, T., Skotnicki, T., Faynot, O., Boeuf, F.
Published in 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) (01.03.2012)
Published in 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) (01.03.2012)
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Conference Proceeding
Phase Change Memories challenges: A material and process perspective
Maitrejean, S., Ghezzi, G., Gourvest, E., Beneventi, G. B., Fantini, A., Pashkov, N., Navarro, G., Roule, A., Fillot, F., Noe, P., Lhostis, S., Cueto, O., Jahan, C., Nodin, J. F., Persico, A., Armand, M., Dussault, L., Valle, C., Michallon, P., Morel, R., Brenac, A., Audier, M., Raty, J., Hippert, F., Perniola, L., Sousa, V., de Salvo, B.
Published in 2012 IEEE International Interconnect Technology Conference (01.06.2012)
Published in 2012 IEEE International Interconnect Technology Conference (01.06.2012)
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Conference Proceeding
Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
Maitrejean, S., Lhostis, S., Haukka, S., Jahan, C., Gourvest, E., Matero, R., Blomberg, T., Toffoli, A., Persico, A., Jayet, C., Veillerot, M., Barnes, J. P., Pierre, F., Fillot, F., Perniola, L., Sousa, V., Sprey, H., Boulanger, F., de Salvo, B., Billon, T.
Published in 2011 IEEE International Interconnect Technology Conference (01.05.2011)
Published in 2011 IEEE International Interconnect Technology Conference (01.05.2011)
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