Carbon reactions in reactive ion etched silicon
BENTON, J. L, MICHEL, J, KIMERLING, L. C, WEIR, B. E, GOTTSCHO, R. A
Published in Journal of electronic materials (01.09.1991)
Published in Journal of electronic materials (01.09.1991)
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Journal Article
Substrate effect on plasma-enhanced chemical vapor deposited silicon nitride
SHERMAN, S, WAGNER, S, MUCHA, J, GOLTSCHO, R. A
Published in Journal of the Electrochemical Society (01.09.1997)
Published in Journal of the Electrochemical Society (01.09.1997)
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Journal Article
Aspect ratio independent etching : fact or fantasy ?
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Conference Proceeding
Journal Article
Real-time monitoring of silicon nitride composition during plasma enhanced chemical vapor deposition
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Conference Proceeding
Journal Article
Doppler-broadened line shapes of atomic hydrogen in a parallel-plate radio frequency discharge
CAPPELLI, A. L, GOTTSCHO, R. A, MILLER, T. A
Published in Plasma chemistry and plasma processing (01.12.1985)
Published in Plasma chemistry and plasma processing (01.12.1985)
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Journal Article
Low-temperature plasma etching of GaAs, AlGaAs, and AlAs
GREGUS, J. A, VERNON, M. F, GOTTSCHO, R. A, SCHELLER, G. R, HOBSON, W. S, OPILA, R. L, YOON, E
Published in Plasma chemistry and plasma processing (01.09.1993)
Published in Plasma chemistry and plasma processing (01.09.1993)
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Journal Article
Interconnection processes and materials
Blonder, Greg E., Gottscho, Richard A., Tai, King L.
Published in AT&T Technical Journal (01.11.1990)
Published in AT&T Technical Journal (01.11.1990)
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Journal Article
Electric field reversals in dc negative glow discharges
Gottscho, RA, Mitchell, A, Scheller, GR, Chan, YY, Graves, DB
Published in Physical review. A, General physics (01.12.1989)
Published in Physical review. A, General physics (01.12.1989)
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Journal Article
Theoretical electronic structure and perturbations in SiS
Robbe, J.M., Lefebvre-Brion, H., Gottscho, R.A.
Published in Journal of molecular spectroscopy (1981)
Published in Journal of molecular spectroscopy (1981)
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Journal Article