Alterations in Blood-Brain Barrier Integrity and Lateral Ventricle Differ in Rats Exposed to Space Radiation and Social Isolation
Adkins, Austin M, Luyo, Zachary N M, Gibbs, Alayna J, Boden, Alea F, Heerbrandt, Riley S, Gotthold, Justin D, Britten, Richard A, Wellman, Laurie L, Sanford, Larry D
Published in Life (Basel, Switzerland) (01.05.2024)
Published in Life (Basel, Switzerland) (01.05.2024)
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Journal Article
Sleep and Core Body Temperature Alterations Induced by Space Radiation in Rats
Sanford, Larry D, Adkins, Austin M, Boden, Alea F, Gotthold, Justin D, Harris, Ryan D, Shuboni-Mulligan, Dorela, Wellman, Laurie L, Britten, Richard A
Published in Life (Basel, Switzerland) (01.04.2023)
Published in Life (Basel, Switzerland) (01.04.2023)
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Journal Article
Differential Impact of Social Isolation and Space Radiation on Behavior and Motor Learning in Rats
Adkins, Austin M, Colby, Emily M, Boden, Alea F, Gotthold, Justin D, Harris, Ryan D, Britten, Richard A, Wellman, Laurie L, Sanford, Larry D
Published in Life (Basel, Switzerland) (01.03.2023)
Published in Life (Basel, Switzerland) (01.03.2023)
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Journal Article
Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide
GOTTHOLD, D. W, GUO, S. P, BIRKHAHN, R, ALBERT, B, FLORESCU, D, PERES, B
Published in Journal of electronic materials (01.05.2004)
Published in Journal of electronic materials (01.05.2004)
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Conference Proceeding
Journal Article
Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors
Lobanova, A., Mazaev, K., Yakovlev, E., Talalaev, R., Galyukov, A., Makarov, Yu, Gotthold, D., Albert, B., Kadinski, L., Peres, B.
Published in Journal of crystal growth (15.05.2004)
Published in Journal of crystal growth (15.05.2004)
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Journal Article
Conference Proceeding
Effects of social isolation and galactic cosmic radiation on fine motor skills and behavioral performance
Adkins, Austin M., Colby, Emily M., Boden, Alea F., Gotthold, Justin D., Harris, Ryan D., Britten, Richard A., Wellman, Laurie L., Sanford, Larry D.
Published in Life sciences in space research (01.05.2024)
Published in Life sciences in space research (01.05.2024)
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Journal Article
Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode
Neuburger, M., Allgaier, J., Zimmermann, T., Daumiller, I., Kunze, M., Birkhahn, R., Gotthold, D.W., Kohn, E.
Published in IEEE electron device letters (01.05.2004)
Published in IEEE electron device letters (01.05.2004)
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Journal Article
Growth of high quality InN on production style PA-MBE system
Gherasoiu, I., O'Steen, M., Bird, T., Gotthold, D., Chandolu, A., Song, D. Y., Xu, S. X., Holtz, M., Nikishin, S. A., Schaff, W. J.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors
Mazaev, K.M., Lobanova, A.V., Yakovlev, E.V., Talalaev, R.A., Galyukov, A.O., Makarov, Yu.N., Gotthold, D., Albert, B., Kadinski, L., Peres, B.
Published in Journal of crystal growth (19.01.2004)
Published in Journal of crystal growth (19.01.2004)
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Journal Article
Conference Proceeding
Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates
Pattada, B., Chen, Jiayu, Manasreh, M. O., Guo, S., Gotthold, D., Pophristic, M., Peres, B.
Published in Journal of applied physics (01.05.2003)
Published in Journal of applied physics (01.05.2003)
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Journal Article
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation
Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jessen, G.H., Jenkins, T.J., Yannuzi, M.J., Via, G.D., Crespo, A.
Published in Solid-state electronics (01.10.2003)
Published in Solid-state electronics (01.10.2003)
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Journal Article
High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN∕GaN high electron mobility transistors
Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jenkins, T., Sewell, J., Via, D., Crespo, A.
Published in Electronics letters (15.05.2003)
Published in Electronics letters (15.05.2003)
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Journal Article
Ohmic contacts to n-type AlGaN and nitride HEMT epilayers
Wang, P.K., Schweitz, K.O., Pribicko, T.G., Mohney, S.E., Pophristic, M., Gotthold, D.
Published in 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) (2001)
Published in 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) (2001)
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Conference Proceeding
Microwave noise performances of AlGaN∕GaN HEMTs on semi-insulating 6H-SiC substrates
Lee, J.-W., Kumar, V., Schwindt, R., Kuliev, A., Birkhahn, R., Gotthold, D., Guo, S., Albert, B., Adesida, I.
Published in Electronics letters (08.01.2004)
Published in Electronics letters (08.01.2004)
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Journal Article
Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates
Lee, J-W, Kumar, V, Schwindt, R, Kuliev, A, Birkhahn, R, Gotthold, D, Guo, S, Albert, B, Adesida, I
Published in Electronics letters (08.01.2004)
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Published in Electronics letters (08.01.2004)
Journal Article
High performance 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz
Kumar, V, Lee, J-W, Kuliev, A, Aktas, O, Schwindt, R, Birkhahn, R, Gotthold, D, Guo, S, Albert, B, Adesida, I
Published in Electronics letters (30.10.2003)
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Published in Electronics letters (30.10.2003)
Journal Article
High performance 0.25 mu m gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz
Kumar, V, Lee, J-W, Kuliev, A, Aktas, O, Schwindt, R, Birkhahn, R, Gotthold, D, Guo, S, Albert, B, Adesida, I
Published in Electronics letters (01.10.2003)
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Published in Electronics letters (01.10.2003)
Journal Article
High performance 0.25 [micro sign]m gate-length AlGaN∕GaN HEMTs on 6H-SiC with power density of 6.7 W∕mm at 18 GHz
Kumar, V., Lee, J.-W., Kuliev, A., Aktas, O., Schwindt, R., Birkhahn, R., Gotthold, D., Guo, S., Albert, B., Adesida, I.
Published in Electronics letters (2003)
Published in Electronics letters (2003)
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Journal Article
Small signal measurement of Sc2O3 AlGaN/GaN moshemts
Luo, B., Mehandru, R., Kang, B.S., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J.K., Jenkins, T., Sewell, J., Via, D., Crespo, A.
Published in Solid-state electronics (01.02.2004)
Published in Solid-state electronics (01.02.2004)
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Journal Article
Small signal measurement of Sc 2O 3 AlGaN/GaN moshemts
Luo, B., Mehandru, R., Kang, B.S., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J.K., Jenkins, T., Sewell, J., Via, D., Crespo, A.
Published in Solid-state electronics (2004)
Published in Solid-state electronics (2004)
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Journal Article