Atomic-scale imaging of individual dopant atoms and clusters in highly n -type bulk Si
Muller, D. A, Voyles, P. M, Grazul, J. L, Citrin, P. H, Gossmann, H.-J. L
Published in Nature (London) (25.04.2002)
Published in Nature (London) (25.04.2002)
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Journal Article
4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing
Kuebler, L., Hershkovitz, E., Kouzminov, D., Gossmann, H.-J., Charnvanichborikarn, S., Hatem, C., Kim, H., Jones, K. S.
Published in Electronic materials letters (01.05.2024)
Published in Electronic materials letters (01.05.2024)
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Journal Article
The role of carbon capping and Ar pressure on SiC surface degradation during high temperature annealing
Kuebler, L., Hershkovitz, E., Kouzminov, D., Gossmann, H.-J., Charnvanichborikarn, S., Kim, H., Pearton, S.J., Jones, K.S.
Published in Applied surface science (15.10.2024)
Published in Applied surface science (15.10.2024)
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Journal Article
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.
Published in IEEE electron device letters (01.04.2003)
Published in IEEE electron device letters (01.04.2003)
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Journal Article
The scaled FinFET well formation using heated implantation
Guo, B. N., Pradhan, N., Zhang, Y., Gossmann, H.-J., Meer, H. V., Waite, A., Colombeau, B., Shim, K. H.
Published in MRS advances (19.12.2022)
Published in MRS advances (19.12.2022)
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Journal Article
p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing
Li, C. I., Breil, N., Wen, T. Y., Liu, S. Y., Hsieh, M. S., Yen, S. J., Chang, C. W., Tsai, S. H., Gossmann, H., Guo, B. N., Shim, K. H., Variam, N., Tang, S., Wang, C., Salimian, S., Nejad, H., Sharma, S., Wen, J., Khaja, F. A., Hollar, K., Ng, B., Nagy, S., Hung, R., Hou, M., Chen, S., Kuo, J., Liao, D., Chudzik, M., Yang, N. H., Hung, G. C., Hsu, S. C., Wu, J. Y.
Published in IEEE electron device letters (01.02.2019)
Published in IEEE electron device letters (01.02.2019)
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Journal Article
Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy
Rummukainen, M, Makkonen, I, Ranki, V, Puska, M J, Saarinen, K, Gossmann, H-J L
Published in Physical review letters (29.04.2005)
Published in Physical review letters (29.04.2005)
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Journal Article
Benefits of cryo-implantation for 28 nm NMOS advanced junction formation
Yang, C L, Li, C I, Lin, G P, Liu, R, Hsu, B C, Chan, M, Wu, J Y, Colombeau, B, Guo, B N, Gossmann, H J, Wu, T, Feng, W, Sun, H L, Lu, S
Published in Semiconductor science and technology (01.04.2012)
Published in Semiconductor science and technology (01.04.2012)
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Journal Article
Defect identification using the core-electron contribution in Doppler-broadening spectroscopy of positron-annihilation radiation
Szpala, S, Asoka-Kumar, P, Nielsen, B, Peng, JP, Hayakawa, S, Lynn, KG, Gossmann, H
Published in Physical review. B, Condensed matter (15.08.1996)
Published in Physical review. B, Condensed matter (15.08.1996)
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Journal Article
Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond
Wood, Bingxi Sun, Khaja, Fareen Adeni, Colombeau, Benjamin P, Sun, Shiyu, Waite, Andrew, Jin, Miao, Chen, Hao, Chan, Osbert, Thanigaivelan, Thirumal, Pradhan, Nilay, Gossmann, Hans-Joachim L, Sharma, Shashank, Chavva, Venkataramana R, Cai, Man-Ping, Okazaki, Motoya, Munnangi, Samuel Swaroop, Ni, Chi-Nung, Suen, Wesley, Chang, Chorng-Ping, Mayur, Abhilash, Variam, Naushad, Brand, Adam D
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
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Journal Article
On the FinFET extension implant energy
Gossmann, H.-J.L., Agarwal, A., Parrill, T., Rubin, L.M., Poate, J.M.
Published in IEEE transactions on nanotechnology (01.12.2003)
Published in IEEE transactions on nanotechnology (01.12.2003)
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Journal Article
Conference Proceeding
Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon
Chan, H.Y., Nordlund, K., Gossmann, H.-J.L., Harris, M., Montgomery, N.J., Mulcahy, C.P.A., Biswas, S., Srinivasan, M.P., Benistant, F., Ng, C.M., Chan, Lap
Published in Thin solid films (10.05.2006)
Published in Thin solid films (10.05.2006)
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Conference Proceeding
Superlattice ultrasonic generation
Wilson, T E, Oehme, M, Kasper, E, Gossmann, H-J L
Published in Journal of physics. Conference series (01.01.2011)
Published in Journal of physics. Conference series (01.01.2011)
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Journal Article
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric
YANG, B, YE, P. D, KWO, J, FREI, M. R, GOSSMANN, H.-J. L, MANNAERTS, J. P, SERGENT, M, HONG, M, NG, K, BUDE, J
Published in Journal of crystal growth (01.04.2003)
Published in Journal of crystal growth (01.04.2003)
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Conference Proceeding
Journal Article
Advances in high κ gate dielectrics for Si and III–V semiconductors
Kwo, J., Hong, M., Busch, B., Muller, D.A., Chabal, Y.J., Kortan, A.R., Mannaerts, J.P., Yang, B., Ye, P., Gossmann, H., Sergent, A.M., Ng, K.K., Bude, J., Schulte, W.H., Garfunkel, E., Gustafsson, T.
Published in Journal of crystal growth (01.04.2003)
Published in Journal of crystal growth (01.04.2003)
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Journal Article
Conference Proceeding
Amorphous layer depth dependence on implant parameters during Si self-implantation
Lopez, Pedro, Pelaz, Lourdes, Marques, Luis A., Barbolla, Juan, Gossmann, H.-J.L., Agarwal, Aditya, Kimura, Kenji, Matsushita, Tomoyoshi
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2005)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2005)
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Journal Article
Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes
Voyles, P M, Chadi, D J, Citrin, P H, Muller, D A, Grazul, J L, Northrup, P A, Gossmann, H-J L
Published in Physical review letters (19.09.2003)
Published in Physical review letters (19.09.2003)
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