Design of complementary LDMOS in 0.35 [micro]m BiCMOS technology for smart integration
Abouelatta-Ebrahim, M, Gontrand, C, Zekry, A
Published in European physical journal. Applied physics (01.01.2012)
Published in European physical journal. Applied physics (01.01.2012)
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Journal Article
A Simple Way for Substrate Noise Modeling in Mixed-Signal ICs
Valorge, O., Andrei, C., Calmon, F., Verdier, J., Gontrand, C., Dautriche, P.
Published in IEEE transactions on circuits and systems. I, Regular papers (01.10.2006)
Published in IEEE transactions on circuits and systems. I, Regular papers (01.10.2006)
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Journal Article
MARKOV CHAIN APPROACH OF DIGITAL FLOW DISTURBANCES ON SUPPLIES VIA HETEROGENEOUS INTEGRATED CIRCUIT SUBSTRATE
Gontrand, C, Perez, JCN, Viverge, P-J, Calmon, F, Labiod, S, Latreche, S, Valorge, O, Mary, P
Published in International journal of modelling & simulation (01.01.2010)
Published in International journal of modelling & simulation (01.01.2010)
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Journal Article
Effect of High-k Oxide on Double Gate Transistor Embedded in RF Colpitts Oscillator
Bella, M, Latreche, S, Gontrand, C
Published in Journal of Nano- and Electronic Physics (01.10.2016)
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Published in Journal of Nano- and Electronic Physics (01.10.2016)
Journal Article
Test bed for low-cost measurement of AM/AM and AM/PM effects in RF PAs based on FPGA
Nunez-Perez, J. C., Cardenas-Valdez, J. R., Gontrand, C., Jauregui-Duran, R., Reynoso-Hernandez, J. A.
Published in 2015 International Conference on Electronics, Communications and Computers (CONIELECOMP) (01.02.2015)
Published in 2015 International Conference on Electronics, Communications and Computers (CONIELECOMP) (01.02.2015)
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Conference Proceeding
A new model for codiffusion in polycrystalline silicon specified to BiCMOS technology
Gontrand, C, Haddab, Y, Kaabi, L, Merabet, A
Published in Semiconductor science and technology (01.10.1995)
Published in Semiconductor science and technology (01.10.1995)
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Journal Article
Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization
Kaabi, L., Gontrand, C., Pinard, P., Balland, B., Remaki, B., Gamoudi, M., Guillaud, G.
Published in Synthetic metals (01.11.1997)
Published in Synthetic metals (01.11.1997)
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Journal Article
Conference Proceeding
Complementary LDMOSFET in 0.35μm BiCMOS technology-characterization and modeling
Abouelatta-Ebrahim, M, Gontrand, C, Zekry, A
Published in 2010 IEEE International Symposium on Industrial Electronics (01.07.2010)
Published in 2010 IEEE International Symposium on Industrial Electronics (01.07.2010)
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Conference Proceeding
The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask
Kaabi, L., Remaki, B., Gontrand, C., Lo, P.F., Balland, B.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.1996)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.1996)
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Journal Article
Design of complementary LDMOS in 0.35 μm BiCMOS technology for smart integration
Abouelatta-Ebrahim, M., Gontrand, C., Zekry, A.
Published in European physical journal. Applied physics (01.01.2012)
Published in European physical journal. Applied physics (01.01.2012)
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Journal Article
Investigation of BF2+ implants in silicon through SiO2 films Redistribution of fluorine and boron under rapid thermal annealing
Kaabi, L., Gontrand, C., Lemiti, M., Remaki, B., Balland, B., Meddeb, J., Marty, O.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.1996)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.1996)
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Journal Article
Diffusion and codiffusion of boron and arsenic in monocrystalline silicon during rapid thermal annealings
Gontrand, C, Ancey, P, Haddab, H, Chaussemy, G
Published in Semiconductor science and technology (01.02.1992)
Published in Semiconductor science and technology (01.02.1992)
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Journal Article