Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase
Alrifai, L., Skopin, E. V., Guillaume, N., Gonon, P., Bsiesy, A.
Published in Applied physics letters (17.07.2023)
Published in Applied physics letters (17.07.2023)
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Sub-10-nm ferroelectric Gd-doped HfO2 layers
Skopin, E. V., Guillaume, N., Alrifai, L., Gonon, P., Bsiesy, A.
Published in Applied physics letters (25.04.2022)
Published in Applied physics letters (25.04.2022)
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Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2
BERNARD, Y, RENARD, V. T, GONON, P, JOUSSEAUME, V
Published in Microelectronic engineering (01.05.2011)
Published in Microelectronic engineering (01.05.2011)
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Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms
Saadi, M., Gonon, P., Vallée, C., Jomni, F., Jalaguier, E., Bsiesy, A.
Published in Journal of materials science. Materials in electronics (01.08.2020)
Published in Journal of materials science. Materials in electronics (01.08.2020)
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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material
Bertaud, T., Walczyk, D., Walczyk, Ch, Kubotsch, S., Sowinska, M., Schroeder, T., Wenger, Ch, Vallée, C., Gonon, P., Mannequin, C., Jousseaume, V., Grampeix, H.
Published in Thin solid films (01.05.2012)
Published in Thin solid films (01.05.2012)
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Conference Proceeding
Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications
Salaün, A., Grampeix, H., Buckley, J., Mannequin, C., Vallée, C., Gonon, P., Jeannot, S., Gaumer, C., Gros-Jean, M., Jousseaume, V.
Published in Thin solid films (15.12.2012)
Published in Thin solid films (15.12.2012)
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Reliability of HfO2 metal-insulator-metal capacitors under AC stress
Kassmi, M, Jomni, F, Gonon, P, Khaldi, O, Latu-Romain, L, Mannequin, C, Bsiesy, A, Basrour, S, Yangui, B
Published in Journal of physics. D, Applied physics (21.03.2016)
Published in Journal of physics. D, Applied physics (21.03.2016)
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Water absorption in a glass-mica-epoxy composite - I: Influence on Electrical Properties
Hong, T P, Lesaint, O, Gonon, P
Published in IEEE transactions on dielectrics and electrical insulation (01.01.2009)
Published in IEEE transactions on dielectrics and electrical insulation (01.01.2009)
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Dielectric properties of amorphous BaTiO3 films deposited by RF magnetron sputtering
KAMEL, F. El, GONON, P, JOMNI, F, YANGUI, B
Published in Journal of the European Ceramic Society (2007)
Published in Journal of the European Ceramic Society (2007)
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Dielectric response of an epoxy resin when exposed to high temperatures
BOUDEFEL, A, GONON, P
Published in Journal of materials science. Materials in electronics (01.03.2006)
Published in Journal of materials science. Materials in electronics (01.03.2006)
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High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies
Vallée, C., Gonon, P., Jorel, C., El Kamel, F., Mougenot, M., Jousseaume, V.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Electrical properties of low temperature deposited amorphous barium titanate thin films as dielectrics for integrated capacitors
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Conference Proceeding
Influence of high levels of water absorption on the resistivity and dielectric permittivity of epoxy composites
Gonon, P., Pham Hong, T., Lesaint, O., Bourdelais, S., Debruyne, H.
Published in Polymer testing (01.09.2005)
Published in Polymer testing (01.09.2005)
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Investigation of electrically active defects in amorphous barium titanate thin films
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Conference Proceeding