Behaviors of Al xGa 1− xN (0.5⩽ x⩽1.0 )/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films
Gong, J.R., Huang, C.W., Tseng, S.F., Lin, T.Y., Lin, K.M., Liao, W.T., Tsai, Y.L., Shi, B.H., Wang, C.L.
Published in Journal of crystal growth (2004)
Published in Journal of crystal growth (2004)
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Organic light-emitting diodes with improved hole-electron balance by using molecular layers of phthalocyanine to modify the anode surface
WANG, S, LIU, Y. Q, BAI, C. L, ZHU, D. B, HUANG, X. B, XU, S. L, GONG, J. R, CHEN, X. H, YI, L, XU, Y, YU, G, WAN, L. J
Published in Applied physics. A, Materials science & processing (01.03.2004)
Published in Applied physics. A, Materials science & processing (01.03.2004)
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Journal Article
Behaviors of AlxGa1-xN (0.5≤x≤1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films
GONG, J. R, HUANG, C. W, TSENG, S. F, LIN, T. Y, LIN, K. M, LIAO, W. T, TSAI, Y. L, SHI, B. H, WANG, C. L
Published in Journal of crystal growth (02.01.2004)
Published in Journal of crystal growth (02.01.2004)
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Journal Article
Materials aspects of multijunction solar cells
Hussien, S.A., Colter, P., Dip, A., Gong, J.R., Erdogan, M.U., Bedair, S.M.
Published in Solar cells (1991)
Published in Solar cells (1991)
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Conference Proceeding
Growth and characterization of GaN films on (0001) sapphire substrates by alternate supply of trimethylgallium and NH 3
Wang, H.Y., Huang, S.C., Yan, T.Y., Gong, J.R., Lin, T.Y., Chen, Y.F.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1999)
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Journal Article
Growth and characterization of GaN films on (0001) sapphire substrates by alternate supply of trimethylgallium and NH3
WANG, H. Y, HUANG, S. C, YAN, T. Y, GONG, J. R, LIN, T. Y, CHEN, Y. F
Published in Materials science & engineering. B, Solid-state materials for advanced technology (29.01.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (29.01.1999)
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Journal Article
Atomic layer epitaxy of Al x Ga 1− x As and device quality GaAs
Gong, J.R., Colter, P.C., Jung, D., Hussien, S.A., Parker, C.A., Dip, A., Hyuga, F., Duncan, W.M., Bedair, S.M.
Published in Journal of crystal growth (1991)
Published in Journal of crystal growth (1991)
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Journal Article
Low temperature growth of ALGaP and GaP on Si substrates by atomic layer epitaxy
GONG, J. R, NAKAMURA, S, LEONARD, M, BEDAIR, S. M, EL-MASRY, N. A
Published in Journal of electronic materials (01.10.1992)
Published in Journal of electronic materials (01.10.1992)
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Journal Article
Atomic layer epitaxy of AlxGa1−xAs and device quality GaAs
Gong, J.R., Colter, P.C., Jung, D., Hussien, S.A., Parker, C.A., Dip, A., Hyuga, F., Duncan, W.M., Bedair, S.M.
Published in Journal of crystal growth (01.01.1991)
Published in Journal of crystal growth (01.01.1991)
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Journal Article