Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition
Veinger, A. I., Zabrodskii, A. G., Makarova, T. L., Tisnek, T. V., Goloshchapov, S. I., Semenikhin, P. V.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2015)
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Journal Article
Low-temperature variation of magnetic order in a nonmagnetic n-Ge:As semiconductor in the vicinity of the metal-insulator phase transition
Veinger, A. I., Zabrodskii, A. G., Makarova, T. L., Tisnek, T. V., Goloshchapov, S. I., Semenikhin, P. V.
Published in Journal of experimental and theoretical physics (01.05.2013)
Published in Journal of experimental and theoretical physics (01.05.2013)
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Journal Article
Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes
Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2011)
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Journal Article
Spin-peierls transition in the random impurity sublattice of a semiconductor
Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
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Journal Article
Spin-Peierls transition in the Ge:As semiconductor impurity system in the vicinity of the insulator–metal phase transition
Veinger, A.I., Zabrodskii, A.G., Tisnek, T.V., Goloshchapov, S.I.
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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Journal Article
Conference Proceeding
Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors
Veinger, A.I., Zabrodskii, A.G., Tisnek, T.V., Goloshchapov, S.I.
Published in Solid state communications (01.02.2005)
Published in Solid state communications (01.02.2005)
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Journal Article