The mechanism of current flow in an alloyed In-GaN ohmic contact
Blank, T. V., Gol’dberg, Yu. A., Konstantinov, O. V., Nikitin, V. G., Posse, E. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2006)
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Mechanism of current flow in alloyed ohmic In/GaAs contacts
Blank, T. V., Gol’dberg, Yu. A., Konstantinov, O. V., Nikitin, V. G., Posse, E. A.
Published in Technical physics (01.02.2007)
Published in Technical physics (01.02.2007)
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Journal Article
Current flow mechanism in ohmic contact to n-4H-SiC
Blank, T. V., Goldberg, Yu. A., Posse, E. A., Soldatenkov, F. Yu
Published in Semiconductors (Woodbury, N.Y.) (01.04.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2010)
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Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide
Blank, T. V., Goldberg, Yu. A., Konstantinov, O. V., Nikitin, V. G., Posse, E. A.
Published in Technical physics letters (01.10.2004)
Published in Technical physics letters (01.10.2004)
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4H-SiC-based photodetector of Carcinogenic UV radiation
Blank, T. V., Goldberg, Yu. A., Kalinina, E. V., Konstantinov, O. V.
Published in Technical physics (2008)
Published in Technical physics (2008)
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Effect of the electric field in the space-charge layer on the efficiency of short-wave photoelectric conversion in GaAs Schottky diodes
Blank, T. V., Gol’dberg, Yu. A., Konstantinov, O. V., Obolenskii, O. I., Posse, E. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.1997)
Published in Semiconductors (Woodbury, N.Y.) (01.10.1997)
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