0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V
Nagano, Y., Mikawa, T., Kutsunai, T., Hayashi, S., Nasu, T., Natsume, S., Tatsunari, T., Ito, T., Goto, S., Yano, H., Noma, A., Nagahashi, K., Miki, T., Sakagami, M., Izutsu, Y., Nakakuma, T., Hirano, H., Iwanari, S., Murakuki, Y., Yamaoka, K., Goho, Y., Judai, Y., Fujii, E., Sato, K.
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
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