Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure
Kian-Hui Goh, Yadav, Sachin, Kain Lu Low, Gengchiau Liang, Xiao Gong, Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
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Journal Article
Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
Low, Kain Lu, Zhan, Chunlei, Han, Genquan, Yang, Yue, Goh, Kian-Hui, Guo, Pengfei, Toh, Eng-Huat, Yeo, Yee-Chia
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate
Yadav, Sachin, Kian Hua Tan, Kumar, Annie, Kian Hui Goh, Gengchiau Liang, Soon-Fatt Yoon, Xiao Gong, Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.02.2017)
Published in IEEE transactions on electron devices (01.02.2017)
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Journal Article
Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
Goh, Kian-Hui, Cheng, Yuanbing, Lu Low, Kain, Yu Jin Kong, Eugene, Chia, Ching-Kean, Toh, Eng-Huat, Yeo, Yee-Chia
Published in Journal of applied physics (28.01.2013)
Published in Journal of applied physics (28.01.2013)
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Journal Article
Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
Low, Kain Lu, Zhan, Chunlei, Han, Genquan, Yang, Yue, Goh, Kian-Hui, Guo, Pengfei, Toh, Eng-Huat, Yeo, Yee-Chia
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
Xiao Gong, Genquan Han, Shaojian Su, Ran Cheng, Pengfei Guo, Fan Bai, Yue Yang, Qian Zhou, Bin Liu, Kian Hui Goh, Guangze Zhang, Chunlai Xue, Buwen Cheng, Yee-Chia Yeo
Published in 2013 Symposium on VLSI Technology (01.06.2013)
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Published in 2013 Symposium on VLSI Technology (01.06.2013)
Conference Proceeding
First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules
Yadav, Sachin, Kian-Hua Tan, Annie, Kian Hui Goh, Subramanian, Sujith, Kain Lu Low, Nanyan Chen, Bowen Jia, Soon-Fatt Yoon, Gengchiau Liang, Xiao Gong, Yee-Chia Yeo
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure
Goh, Kian Hui, Guo, Yan, Gong, Xiao, Liang, Geng-Chiau, Yeo, Yee-Chia
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Journal Article
Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10 degree offcut germanium-on-insulator substrate
Goh, Kian-Hui, Cheng, Yuanbing, Lu Low, Kain, Yu Jin Kong, Eugene, Chia, Ching-Kean, Toh, Eng-Huat, Yeo, Yee-Chia
Published in Journal of applied physics (01.01.2013)
Published in Journal of applied physics (01.01.2013)
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Journal Article
(Invited) Enabling Hetero-Integration of III-V and Ge-Based Transistors on Silicon with Ultra-Thin Buffers Formed by Interfacial Misfit Technique
Gong, Xiao, Yadav, Sachin, Goh, Kian Hui, Tan, Kian Hua, Kumar, Annie, Low, Kian Lu, Jia, Bowen, Yoon, Soon-Fatt, Liang, Gengchiau, Yeo, Yee-Chia
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Journal Article
(Invited) Enabling Hetero-Integration of III-V and Ge-Based Transistors on Silicon with Ultra-Thin Buffers Formed by Interfacial Misfit Technique
Gong, Xiao, Yadav, Sachin, Goh, Kian Hui, Tan, Kian Hua, Kumar, Annie, Low, Kian Lu, Jia, Bowen, Yoon, Soon-Fatt, Liang, Gengchiau, Yeo, Yee-Chia
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
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Journal Article
Ultra-thin-body In0.7Ga0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
Xiao Gong, Zhu Zhu, Kong, E., Ran Cheng, Subramanian, S., Kian Hui Goh, Yee-Chia Yeo
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
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Conference Proceeding
PBTI characteristics of N-channel tunneling field effect transistor with HfO2 gate dielectric: New insights and physical model
Genquan Han, Yue Yang, Pengfei Guo, Chunlei Zhan, Kain Lu Low, Kian Hui Goh, Bin Liu, Eng-Huat Toh, Yee-Chia Yeo
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
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Conference Proceeding