Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices
Gogineni, Usha, Hongmei Li, del Alamo, Jesus A, Sweeney, Susan L, Jing Wang, Jagannathan, Basanth
Published in IEEE journal of solid-state circuits (01.05.2010)
Published in IEEE journal of solid-state circuits (01.05.2010)
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Journal Article
Conference Proceeding
Compact modeling of LDMOS working in the third quadrant
Kejun Xia, Indana, Harihara, Gogineni, Usha
Published in Proceedings of the IEEE 2014 Custom Integrated Circuits Conference (01.09.2014)
Published in Proceedings of the IEEE 2014 Custom Integrated Circuits Conference (01.09.2014)
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Conference Proceeding
A Comprehensive SPICE Modeling Methodology for Hot-carrier Degradation
Monga, Udit, Gogineni, Usha, Hetzel, Ines, Jin, Chong, Steinmair, Alexander
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
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Conference Proceeding
Analytical model for RF power performance of deeply scaled CMOS devices
Gogineni, U., del Alamo, J., Valdes-Garcia, A.
Published in 2011 IEEE Radio Frequency Integrated Circuits Symposium (01.06.2011)
Published in 2011 IEEE Radio Frequency Integrated Circuits Symposium (01.06.2011)
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Conference Proceeding
Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices
Gogineni, U., Li, H., Sweeney, S., Wang, J., Jagannathan, B., del Alamo, J.
Published in 2009 IEEE Radio Frequency Integrated Circuits Symposium (01.06.2009)
Published in 2009 IEEE Radio Frequency Integrated Circuits Symposium (01.06.2009)
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Conference Proceeding
Hot electron and hot hole degradation of UHV/CVD SiGe HBT's
Gogineni, U., Cressler, J.D., Niu, G., Harame, D.L.
Published in IEEE transactions on electron devices (01.07.2000)
Published in IEEE transactions on electron devices (01.07.2000)
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Journal Article
Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's
Niu, G., Cressler, J.D., Zhang, S., Gogineni, U., Ahlgren, D.C.
Published in IEEE transactions on electron devices (01.05.1999)
Published in IEEE transactions on electron devices (01.05.1999)
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Journal Article
A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies
Zhang, S., Niu, G., Cressler, J.D., Mathew, S.J., Gogineni, U., Clark, S.D., Zampardi, P., Pierson, R.L.
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
120 V super junction LDMOS transistor
Panigrahi, Sumit Kumar, Baghini, Maryam Shojaei, Gogineni, Usha, Iravani, Farshid
Published in 2013 IEEE International Conference of Electron Devices and Solid-state Circuits (01.06.2013)
Published in 2013 IEEE International Conference of Electron Devices and Solid-state Circuits (01.06.2013)
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Conference Proceeding
RF power potential of 45 nm CMOS technology
Gogineni, U., del Alamo, J.A., Putnam, C.
Published in 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (01.01.2010)
Published in 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (01.01.2010)
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Conference Proceeding
Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBTs
Niu, G., Cressler, J.D., Gogineni, U., Harame, D.L.
Published in IEEE electron device letters (01.08.1998)
Published in IEEE electron device letters (01.08.1998)
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Journal Article