Floating body effect in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT)
Park, Jingyu, Go, Seungwon, Chae, Woojun, Ryoo, Chang Il, Kim, Changwook, Noh, Hyungju, Kim, Seonggeun, Du Ahn, Byung, Cho, In-Tak, Yun, Pil Sang, Bae, Jong Uk, Park, Yoo Seok, Kim, Sangwan, Kim, Dae Hwan
Published in Scientific reports (02.05.2024)
Published in Scientific reports (02.05.2024)
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Journal Article
Simulation study about negative capacitance effects on recessed channel tunnel FET
Kim, Shinhee, Go, Seungwon, Kim, Sangwan
Published in Japanese Journal of Applied Physics (01.06.2021)
Published in Japanese Journal of Applied Physics (01.06.2021)
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Journal Article
Impact of Zr precursor on Electrical Characteristics of HfZrO Laminated Structure
Go, Seungwon, Noh, Hyungju, Lee, Dong Keun, Kim, Seonggeun, Park, Jae Yeon, Im, Un-hyun, Lee, Hojoong, Kim, Sihyun, Kim, Sangwan
Published in IEEE electron device letters (27.07.2024)
Published in IEEE electron device letters (27.07.2024)
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Journal Article
A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor
Kim, Shinhee, Park, Jae Yeon, Go, Seungwon, Kwon, Hyug Su, Choi, Woo Young, Kim, Sangwan
Published in Solid-state electronics (01.01.2021)
Published in Solid-state electronics (01.01.2021)
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Journal Article
Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET)
Go, Seungwon, Kim, Shinhee, Park, Jae Yeon, Lee, Dong Keun, Noh, Hyung Ju, Park, So Ra, Kim, Yoon, Kim, Dae Hwan, Kim, Sangwan
Published in Solid-state electronics (01.12.2022)
Published in Solid-state electronics (01.12.2022)
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Journal Article
The Effect of Ferroelectric Dynamic Behavior on Negative Capacitance Field-Effect Transistor Inverter
Lee, Dongkeun, Go, Seungwon, Park, Jae Yeon, Kim, Sinhee, Noh, Hyung Ju, Park, So Ra, Kim, Sangwan
Published in 2022 International Conference on Electronics, Information, and Communication (ICEIC) (06.02.2022)
Published in 2022 International Conference on Electronics, Information, and Communication (ICEIC) (06.02.2022)
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Conference Proceeding
Investigation on the Effect of Gate Overlap/Underlap on the 1T DRAM Cell
Go, Seungwon, Park, Jae Yeon, Kim, Shinhee, Noh, Hyung Ju, Lee, Dong Keun, Park, So Ra, Kim, Sangwan
Published in 2022 International Conference on Electronics, Information, and Communication (ICEIC) (06.02.2022)
Published in 2022 International Conference on Electronics, Information, and Communication (ICEIC) (06.02.2022)
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Conference Proceeding