Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection
OLIVE-MENDEZ, S, SPIESSER, A, MICHEZ, L. A, LE THANH, V, GLACHANT, A, DERRIEN, J, DEVILLERS, T, BARSKI, A, JAMET, M
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Effect of thickness on structural and magnetic properties of Mn5Ge3 films grown on Ge( 111 ) by solid phase epitaxy
SPIESSER, A, OLIVE-MENDEZ, S. F, DAU, M.-T, MICHEZ, L. A, WATANABE, A, LE THANH, V, GLACHANT, A, DERRIEN, J, BARSKI, A, JAMET, M
Published in Thin solid films (2010)
Published in Thin solid films (2010)
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Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge(111) heterostructures
DAU, M.-T, SPIESSER, A, LEGIANG, T, MICHEZ, L. A, OLIVE-MENDEZ, S. F, LE THANH, V, PETIT, M, RAIMUNDO, J.-M, GLACHANT, A, DERRIEN, J
Published in Thin solid films (2010)
Published in Thin solid films (2010)
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Structural study of vapour phase deposited 3,4,9,10-perylene tetracarboxylicacid diimide: Comparison between single crystal and ultra thin films grown on Pt(100)
Guillermet, O., Mossoyan-Déneux, M., Giorgi, M., Glachant, A., Mossoyan, J.C.
Published in Thin solid films (30.08.2006)
Published in Thin solid films (30.08.2006)
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Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx
PIC, N, GLACHANT, A, NITSCHE, S, HOARAU, J. Y, GOGUENHEIM, D, VUILLAUME, D, SIBAI, A, AUTRAN, J.-L
Published in Journal of non-crystalline solids (01.02.2001)
Published in Journal of non-crystalline solids (01.02.2001)
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Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx
Pic, N., Glachant, A., Nitsche, S., Hoarau, J.Y., Goguenheim, D., Vuillaume, D., Sibai, A., Chaneliere, C.
Published in Solid-state electronics (01.08.2001)
Published in Solid-state electronics (01.08.2001)
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Influence of polycide deposition on the reliability of wet and nitrided oxides
Yckache, K, Boivin, P, Baiget, F, Kristukat, C, Auriel, G, Sagnes, B, Oualid, J, Glachant, A
Published in Journal of non-crystalline solids (01.04.1999)
Published in Journal of non-crystalline solids (01.04.1999)
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Photon- and catalysis-assisted silicon oxynitridation at room temperature: a comparative study
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Determination of the electrical properties of thermally grown ultrathin nitride films
Pic, N, Glachant, A, Nitsche, S, Hoarau, J.Y, Goguenheim, D, Vuillaume, D, Sibai, A, Chanelière, C
Published in Microelectronics and reliability (01.04.2000)
Published in Microelectronics and reliability (01.04.2000)
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Electron-beam-induced nitrogen migration through a nitrided silicon dioxide thin film
Garcia, V., Glachant, A., Pantel, R., Straboni, A.
Published in Applied surface science (01.02.1994)
Published in Applied surface science (01.02.1994)
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Reliability of nitrided wet silicon dioxide thin films in WSi2 or TaSi2 polycide process : influence of the nitridation temperature
Yckache, K., Boivin, P., Baiget, F., Radja, S., Auriel, G., Sagnes, B., Ouahd, J., Glachant, A.
Published in Microelectronics and reliability (01.06.1998)
Published in Microelectronics and reliability (01.06.1998)
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