Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS
Giusi, G., Marega, G. M., Kis, A., Iannaccone, G.
Published in IEEE transactions on electron devices (01.11.2022)
Published in IEEE transactions on electron devices (01.11.2022)
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Journal Article
Low Frequency Noise in DNTT/Cytop™ based Organic Thin Film Transistors
Giusi, G., Rapisarda, M., Scagliotti, M., Mariucci, L., Scandurra, G., Ciofi, C.
Published in IEEE electron device letters (01.10.2023)
Published in IEEE electron device letters (01.10.2023)
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Journal Article
Programmable, very low noise current source
Scandurra, G, Cannatà, G, Giusi, G, Ciofi, C
Published in Review of scientific instruments (01.12.2014)
Published in Review of scientific instruments (01.12.2014)
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Journal Article
High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors
Giusi, G, Giordano, O, Scandurra, G, Rapisarda, M, Calvi, S, Ciofi, C
Published in Review of scientific instruments (01.04.2016)
Published in Review of scientific instruments (01.04.2016)
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Journal Article
Investigation on the Conduction Mechanisms in Metal-Base Vertical Organic Transistors by DC and LF-Noise Measurements
Giusi, G., Sarnelli, E., Barra, M., Cassinese, A., Scandurra, G., Nakayama, K., Ciofi, C.
Published in IEEE transactions on electron devices (01.10.2017)
Published in IEEE transactions on electron devices (01.10.2017)
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Journal Article
Correlated Mobility Fluctuations and Contact Effects in p-Type Organic Thin-Film Transistors
Giusi, G., Giordano, O., Scandurra, G., Calvi, S., Fortunato, G., Rapisarda, M., Mariucci, L., Ciofi, C.
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
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Journal Article
Impact strain engineering on gate stack quality and reliability
Claeys, C., Simoen, E., Put, S., Giusi, G., Crupi, F.
Published in Solid-state electronics (01.08.2008)
Published in Solid-state electronics (01.08.2008)
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Journal Article
Publisher's Note: "High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors" [Rev. Sci. Instrum. 87, 044702 (2016)]
Giusi, G, Giordano, O, Scandurra, G, Rapisarda, M, Calvi, S, Ciofi, C
Published in Review of scientific instruments (01.05.2016)
Published in Review of scientific instruments (01.05.2016)
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Journal Article
Brain excitatory/inhibitory circuits cross-talking with chromogranin A during hypertensive and hibernating states
Giusi, G, Alò, R, Avolio, E, Zizza, M, Facciolo, R M, Talani, G, Biggio, G, Sanna, E, Canonaco, M
Published in Current medicinal chemistry (01.08.2012)
Published in Current medicinal chemistry (01.08.2012)
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Journal Article
Full Model and Characterization of Noise in Operational Amplifier
Giusi, G., Crupi, F., Pace, C., Magnone, P.
Published in IEEE transactions on circuits and systems. I, Regular papers (01.01.2009)
Published in IEEE transactions on circuits and systems. I, Regular papers (01.01.2009)
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Journal Article
Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs
Chabukswar, S., Maji, D., Manoj, C.R., Anil, K.G., Rao, V. Ramgopal, Crupi, F., Magnone, P., Giusi, G., Pace, C., Collaert, N.
Published in Microelectronic engineering (01.10.2010)
Published in Microelectronic engineering (01.10.2010)
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Journal Article
Low-frequency (1/f) noise behavior of locally stressed HfO2/TiN gate-stack pMOSFETs
GIUSI, G, SIMOEN, E, ENEMAN, G, VERHEYEN, P, CRUPI, F, DE MEYER, K, CLAEYS, C, CIOFI, C
Published in IEEE electron device letters (01.06.2006)
Published in IEEE electron device letters (01.06.2006)
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Journal Article
Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation
Giusi, G., Iannaccone, G., Mohamed, M., Ravaioli, U.
Published in IEEE electron device letters (01.11.2008)
Published in IEEE electron device letters (01.11.2008)
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Journal Article