Charge trapping and dielectric breakdown in MOS devices in 77–400 K temperature range
Huang, C.-L., Grot, S.A., Gildenblat, G.Sh, Bolkhovsky, V.
Published in Solid-state electronics (01.09.1989)
Published in Solid-state electronics (01.09.1989)
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Journal Article
Space-charge-limited currents in materials with nonlinear velocity-field relationships
Gildenblat, G.Sh, Rao, A.R., Cohen, S.S.
Published in IEEE transactions on electron devices (01.10.1987)
Published in IEEE transactions on electron devices (01.10.1987)
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Journal Article