Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
Chen, Chen, Ghosh, Saptarsi, De Wolf, Peter, Liang, Zhida, Adams, Francesca, Kappers, Menno J., Wallis, David J., Oliver, Rachel A.
Published in Applied physics letters (03.06.2024)
Published in Applied physics letters (03.06.2024)
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Journal Article
Room temperature quantum emitters in aluminum nitride epilayers on silicon
Cannon, Joseph K., Bishop, Sam G., Eggleton, Katie M., Yağcı, Huseyin B., Clark, Rachel N., Ibrahim, Sherif R., Hadden, John P., Ghosh, Saptarsi, Kappers, Menno J., Oliver, Rachel A., Bennett, Anthony J.
Published in Applied physics letters (10.06.2024)
Published in Applied physics letters (10.06.2024)
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Journal Article
Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis
Dinara, Syed Mukulika, Jana, Sanjay Kr, Ghosh, Saptarsi, Mukhopadhyay, Partha, Kumar, Rahul, Chakraborty, Apurba, Bhattacharya, Sekhar, Biswas, Dhrubes
Published in AIP advances (01.04.2015)
Published in AIP advances (01.04.2015)
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Journal Article
Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer
Mahata, Mihir Kumar, Ghosh, Saptarsi, Jana, Sanjay Kumar, Chakraborty, Apurba, Bag, Ankush, Mukhopadhyay, Partha, Kumar, Rahul, Biswas, Dhrubes
Published in AIP advances (01.11.2014)
Published in AIP advances (01.11.2014)
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Journal Article
Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE
Mukhopadhyay, Partha, Bag, Ankush, Gomes, Umesh, Banerjee, Utsav, Ghosh, Saptarsi, Kabi, Sanjib, Chang, Edward Y. I., Dabiran, Amir, Chow, Peter, Biswas, Dhrubes
Published in Journal of electronic materials (01.04.2014)
Published in Journal of electronic materials (01.04.2014)
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Journal Article
Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening
Bag, Ankush, Kumar, Rahul, Mukhopadhyay, Partha, Mahata, Mihir K., Chakraborty, Apurba, Ghosh, Saptarsi, Jana, Sanjay K., Biswas, Dhrubes
Published in Electronic materials letters (01.07.2015)
Published in Electronic materials letters (01.07.2015)
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Journal Article
Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure
Chakraborty, Apurba, Ghosh, Saptarsi, Mukhopadhyay, Partha, Jana, Sanjay K., Dinara, Syed Mukulika, Bag, Ankush, Mahata, Mihir K., Kumar, Rahul, Das, Subhashis, Das, Palash, Biswas, Dhrubes
Published in Electronic materials letters (01.03.2016)
Published in Electronic materials letters (01.03.2016)
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Journal Article
A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs
Deb, Sanjoy, Ghosh, Saptarsi, Singh, N Basanta, De, A K, Sarkar, Subir Kumar
Published in Journal of semiconductors (01.10.2011)
Published in Journal of semiconductors (01.10.2011)
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Journal Article
Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure
Chakraborty, Apurba, Ghosh, Saptarsi, Mukhopadhyay, Partha, Jana, Sanjay K., Dinara, Syed Mukulika, Bag, Ankush, Mahata, Mihir K., Kumar, Rahul, Das, Subhashis, Das, Palash, Biswas, Dhrubes
Published in Electronic materials letters (01.03.2016)
Published in Electronic materials letters (01.03.2016)
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Journal Article
Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis
Chakraborty, Apurba, Ghosh, Saptarsi, Mukhopadhyay, Partha, Das, Subhashis, Bag, Ankush, Biswas, Dhrubes
Published in Superlattices and microstructures (01.01.2018)
Published in Superlattices and microstructures (01.01.2018)
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Journal Article
Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence
Loeto, Kagiso, Kusch, Gunnar, Ghosh, Saptarsi, Frentrup, Martin, Hinz, Alexander, Oliver, Rachel
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
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Journal Article
Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity
Grishchenko, Yana, Dawson, Josh, Ghosh, Saptarsi, Gundimeda, Abhiram, Spiridon, Bogdan F., Raveendran, Nivedita L., Oliver, Rachel A., Kar-Narayan, Sohini, Calahorra, Yonatan
Published in Journal of magnetism and magnetic materials (15.08.2023)
Published in Journal of magnetism and magnetic materials (15.08.2023)
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Journal Article
OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations
Ghosh, Saptarsi, Das, Subhashis, Dinara, Syed Mukulika, Bag, Ankush, Chakraborty, Apurba, Mukhopadhyay, Partha, Jana, Sanjay Kumar, Biswas, Dhrubes
Published in IEEE transactions on electron devices (01.04.2018)
Published in IEEE transactions on electron devices (01.04.2018)
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Journal Article
Advanced transfer printing with in-situ optical monitoring for the integration of micron-scale devices
Guilhabert, Benoit, Bommer, Sean P., Wessling, Nils K., Jevtics, Dimitars, Smith, Jack A., Xia, Zhongyi, Ghosh, Saptarsi, Kappers, Menno, Watson, Ian M., Oliver, Rachel A., Dawson, Martin D., Strain, Michael J.
Published in IEEE journal of selected topics in quantum electronics (01.05.2023)
Published in IEEE journal of selected topics in quantum electronics (01.05.2023)
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Journal Article