Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency
Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P, Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi
Published in Sensors (Basel, Switzerland) (21.11.2019)
Published in Sensors (Basel, Switzerland) (21.11.2019)
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Journal Article
Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
Dharmarasu, Nethaji, Radhakrishnan, K, Agrawal, Manvi, Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth. E, Ing, Ng Geok
Published in Applied physics express (01.09.2012)
Published in Applied physics express (01.09.2012)
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Journal Article
Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity
Xing, Weichuan, Liu, Zhihong, Ranjan, Kumud, Ng, Geok Ing, Palacios, Tomas
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications
Meneghini, Matteo, Ng, Geok Ing, Medjdoub, Farid, Buffolo, Matteo, Warnock, Shireen, Nath, Digbijoy, Suda, Jun, Shi, Junxia, Shen, Shyh-Chiang
Published in IEEE Transactions on Electron Devices (01.03.2024)
Published in IEEE Transactions on Electron Devices (01.03.2024)
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Journal Article
Publication
Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved } and } Linearity
Weichuan Xing, Zhihong Liu, Haodong Qiu, Geok Ing Ng, Palacios, Tomas
Published in IEEE electron device letters (01.05.2017)
Published in IEEE electron device letters (01.05.2017)
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Journal Article
First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding
Li, Hanchao, Xie, Hanlin, Wang, Yue, Yulia, Lekina, Ranjan, Kumud, Singh, Navab, Chung, Surasit, Lee, Kenneth E., Arulkumaran, Subramaniam, Ing Ng, Geok
Published in Physica status solidi. A, Applications and materials science (15.05.2024)
Published in Physica status solidi. A, Applications and materials science (15.05.2024)
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Journal Article
GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs
Xie, Hanlin, Liu, Zhihong, Hu, Wenrui, Zhong, Zheng, Lee, Kenneth, Guo, Yong-Xin, Ng, Geok Ing
Published in IEEE microwave and wireless components letters (01.02.2021)
Published in IEEE microwave and wireless components letters (01.02.2021)
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Journal Article
Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond
Ranjan, Kumud, Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ng, Geok Ing
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate
Wan Khai, Loke, Yue, Wang, Hanlin, Xie, Hui Teng, Tan, Shuyu, Bao, Kwang Hong, Lee, Lina, Khaw, Lee Eng Kian, Kenneth, Chuan Seng, Tan, Geok Ing, Ng, Fitzgerald, Eugene A., Soon Fatt, Yoon
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.10.2023)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.10.2023)
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Journal Article
A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression
Junbin Zhang, Syamal, Binit, Xing Zhou, Arulkumaran, Subramaniam, Geok Ing Ng
Published in IEEE transactions on electron devices (01.02.2014)
Published in IEEE transactions on electron devices (01.02.2014)
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Journal Article
Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ing, Ng Geok, Nitta, Shugo, Kennedy, John, Amano, Hiroshi
Published in Micromachines (Basel) (20.05.2020)
Published in Micromachines (Basel) (20.05.2020)
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Journal Article
A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects
Syamal, Binit, Xing Zhou, Ben Chiah, Siau, Jesudas, Anand M., Arulkumaran, Subramaniam, Geok Ing Ng
Published in IEEE transactions on electron devices (01.04.2016)
Published in IEEE transactions on electron devices (01.04.2016)
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Journal Article
A Wideband GaN HEMT Modelling with Comprehensive Hybrid Parameter Extraction for 5G Power Amplifiers
Lu, Zhongzhiguang, Xie, Hanlin, Piao, Jiaming, Zhengzhe, Wei, Ing, Ng Geok, Zheng, Yuanjin
Published in 2023 IEEE International Symposium on Circuits and Systems (ISCAS) (21.05.2023)
Published in 2023 IEEE International Symposium on Circuits and Systems (ISCAS) (21.05.2023)
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Conference Proceeding
InAlN/GaN HEMTs on Si With High }} of 250 GHz
Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomas
Published in IEEE electron device letters (01.01.2018)
Published in IEEE electron device letters (01.01.2018)
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Journal Article
Design of Coupled Three-Line Impedance Transformers
Nguyen, Huy Thong, Ang, Kian Sen, Ng, Geok Ing
Published in IEEE microwave and wireless components letters (01.02.2014)
Published in IEEE microwave and wireless components letters (01.02.2014)
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Journal Article
Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan
Published in Japanese Journal of Applied Physics (01.11.2012)
Published in Japanese Journal of Applied Physics (01.11.2012)
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Journal Article
Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
Arulkumaran, Subramaniam, Vicknesh, Sahmuganathan, Ing, Ng Geok, Selvaraj, Susai Lawrence, Egawa, Takashi
Published in Applied physics express (01.08.2011)
Published in Applied physics express (01.08.2011)
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Journal Article