Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs
Jia, Xiaole, Hu, Haodong, Han, Genquan, Liu, Yan, Hao, Yue
Published in Nanoscale research letters (10.02.2021)
Published in Nanoscale research letters (10.02.2021)
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Journal Article
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
Zhang, Siqing, Liu, Yan, Zhou, Jiuren, Ma, Meng, Gao, Anyuan, Zheng, Binjie, Li, Lingfei, Su, Xin, Han, Genquan, Zhang, Jincheng, Shi, Yi, Wang, Xiaomu, Hao, Yue
Published in Nanoscale research letters (02.08.2020)
Published in Nanoscale research letters (02.08.2020)
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Journal Article
Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing
Jiuren Zhou, Genquan Han, Yue Peng, Yan Liu, Jincheng Zhang, Qing-Qing Sun, Zhang, David Wei, Yue Hao
Published in IEEE electron device letters (01.08.2017)
Published in IEEE electron device letters (01.08.2017)
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Journal Article
ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
Liu, Huan, Peng, Yue, Han, Genquan, Liu, Yan, Zhong, Ni, Duan, Chungang, Hao, Yue
Published in Nanoscale research letters (24.05.2020)
Published in Nanoscale research letters (24.05.2020)
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Journal Article
Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film
Peng, Yue, Xiao, Wenwu, Zhang, Guoqing, Han, Genquan, Liu, Yan, Hao, Yue
Published in Nanoscale research letters (24.01.2022)
Published in Nanoscale research letters (24.01.2022)
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Journal Article
Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature
Xu, Jiacheng, Shen, Rongzong, Qian, Haoji, Lin, Gaobo, Gu, Jiani, Rong, Jian, Liu, Huan, Ding, Yian, Zhang, Miaomiao, Liu, Yan, Jin, Chengji, Chen, Jiajia, Han, Genquan
Published in Journal of applied physics (14.09.2024)
Published in Journal of applied physics (14.09.2024)
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Journal Article
Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire
Hu, Haodong, Liu, Yuchen, Han, Genquan, Fang, Cizhe, Zhang, Yanfang, Liu, Huan, Wang, Yibo, Liu, Yan, Ye, Jiandong, Hao, Yue
Published in Nanoscale research letters (07.05.2020)
Published in Nanoscale research letters (07.05.2020)
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Journal Article
Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET
Wang, Hongjuan, Han, Genquan, Liu, Yan, Hu, Shengdong, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue
Published in IEEE transactions on electron devices (01.01.2016)
Published in IEEE transactions on electron devices (01.01.2016)
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Journal Article
High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
Fang, Cizhe, Yang, Qiyu, Yuan, Qingchen, Gan, Xuetao, Zhao, Jianlin, Shao, Yao, Liu, Yan, Han, Genquan, Hao, Yue
Published in Opto-Electronic Advances (01.01.2021)
Published in Opto-Electronic Advances (01.01.2021)
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Journal Article
Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility
Chou, Lulu, Liu, Yan, Xu, Yang, Peng, Yue, Liu, Huan, Yu, Xiao, Han, Genquan, Hao, Yue
Published in Nanoscale research letters (04.08.2021)
Published in Nanoscale research letters (04.08.2021)
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Journal Article
Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory
Peng, Yue, Han, Genquan, Liu, Fenning, Xiao, Wenwu, Liu, Yan, Zhong, Ni, Duan, Chungang, Feng, Ze, Dong, Hong, Hao, Yue
Published in Nanoscale research letters (22.06.2020)
Published in Nanoscale research letters (22.06.2020)
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Journal Article
Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures
Yang, Qiyu, Luo, Zheng-Dong, Duan, Huali, Gan, Xuetao, Zhang, Dawei, Li, Yuewen, Tan, Dongxin, Seidel, Jan, Chen, Wenchao, Liu, Yan, Hao, Yue, Han, Genquan
Published in Nature communications (07.02.2024)
Published in Nature communications (07.02.2024)
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Journal Article
ZrO2 Ferroelectric FET for Non-volatile Memory Application
Liu, Huan, Wang, Chengxu, Han, Genquan, Li, Jing, Peng, Yue, Liu, Yan, Wang, Xingsheng, Zhong, Ni, Duan, Chungang, Wang, Xinran, Xu, Nuo, Liu, Tsu-Jae King, Hao, Yue
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Journal Article
ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
Zhang, Siqing, Liu, Huan, Zhou, Jiuren, Liu, Yan, Han, Genquan, Hao, Yue
Published in Nanoscale research letters (02.02.2021)
Published in Nanoscale research letters (02.02.2021)
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Journal Article
Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region
Jiuren Zhou, Genquan Han, Jing Li, Yue Peng, Yan Liu, Jincheng Zhang, Qing-Qing Sun, Zhang, David Wei, Yue Hao
Published in IEEE transactions on electron devices (01.12.2017)
Published in IEEE transactions on electron devices (01.12.2017)
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Journal Article
A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide
Chen, Li, Wang, Lin, Peng, Yue, Feng, Xuewei, Sarkar, Soumya, Li, Sifan, Li, Bochang, Liu, Liang, Han, Kaizhen, Gong, Xiao, Chen, Jingsheng, Liu, Yan, Han, Genquan, Ang, Kah‐Wee
Published in Advanced electronic materials (01.06.2020)
Published in Advanced electronic materials (01.06.2020)
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