High-Performance Low-Bandgap Polymer Solar Cells With Optical Microcavity Employing Ultrathin Ag Film Electrode
Li, Ning, Chen, Dazheng, Zhang, Chunfu, Chang, Jingjing, Lin, Zhenhua, Han, Genquan, Zhang, Jincheng, Guo, Lixin, Hao, Yue
Published in IEEE photonics journal (01.12.2016)
Published in IEEE photonics journal (01.12.2016)
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Journal Article
Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration
Yang, Yue, Han, Genquan, Guo, Pengfei, Wang, Wei, Gong, Xiao, Wang, Lanxiang, Low, Kain Lu, Yeo, Yee-Chia
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article
Efficient inverted polymer solar cells using low-temperature zinc oxide interlayer processed from aqueous solution
Chen, Dazheng, Zhang, Chunfu, Heng, Ting, Wei, Wei, Wang, Zhizhe, Han, Genquan, Feng, Qian, Hao, Yue, Zhang, Jincheng
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate
Bin Liu, Xiao Gong, Chunlei Zhan, Genquan Han, Hock-Chun Chin, Moh-Lung Ling, Jie Li, Yongdong Liu, Jiangtao Hu, Daval, N., Veytizou, C., Delprat, D., Bich-Yen Nguyen, Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.06.2013)
Published in IEEE transactions on electron devices (01.06.2013)
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Journal Article
Tensile-Strained Mid-Infrared GeSn Detectors Wrapped in Si 3N 4 Liner Stressor: Theoretical Investigation of Impact of Device Architectures
Zhang, Qingfang, Liu, Yan, Zhang, Chunfu, Huang, Qingzhong, Hao, Yue, Han, Genquan
Published in IEEE photonics journal (01.12.2015)
Published in IEEE photonics journal (01.12.2015)
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Journal Article
High-Performance Germanium \Omega -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack
Bin Liu, Xiao Gong, Genquan Han, Lim, P. S. Y., Yi Tong, Qian Zhou, Yue Yang, Daval, N., Veytizou, C., Delprat, D., Bich-Yen Nguyen, Yee-Chia Yeo
Published in IEEE electron device letters (01.10.2012)
Published in IEEE electron device letters (01.10.2012)
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Journal Article
Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation
Mingshan Liu, Genquan Han, Yan Liu, Chunfu Zhang, Hongjuan Wang, Xiangdong Li, Jincheng Zhang, Buwen Cheng, Yue Hao
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers
Zhang, Jincheng, Jiang, Qubo, Lu, Gang, Han, Genquan, You, Hailong, Heng, Ting, Pang, Shangzheng, Zhang, Chunfu, He, Fengqin
Published in International Journal of Photoenergy (01.01.2016)
Published in International Journal of Photoenergy (01.01.2016)
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Journal Article
Efficient Inverted ITO-Free Organic Solar Cells Based on Transparent Silver Electrode with Aqueous Solution-Processed ZnO Interlayer
Hao, Yue, Lixin, Guo, Chang, Jingjing, Han, Genquan, Liu, Yan, Lin, Zhenhua, Zhang, Chunfu, Chen, Dazheng, Wang, Zhizhe, Zhang, Jincheng
Published in International Journal of Photoenergy (01.01.2017)
Published in International Journal of Photoenergy (01.01.2017)
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Journal Article
Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
Low, Kain Lu, Zhan, Chunlei, Han, Genquan, Yang, Yue, Goh, Kian-Hui, Guo, Pengfei, Toh, Eng-Huat, Yeo, Yee-Chia
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain
Han, Genquan, Wang, Yibo, Liu, Yan, Wang, Hongjuan, Liu, Mingshan, Zhang, Chunfu, Zhang, Jincheng, Cheng, Buwen, Hao, Yue
Published in AIP advances (01.05.2015)
Published in AIP advances (01.05.2015)
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Journal Article
Germanium-Tin \hbox^\hbox Junction Formed Using Phosphorus Ion Implant and 400 ^ \hbox Rapid Thermal Anneal
Wang, Lanxiang, Su, Shaojian, Wang, Wei, Yang, Yue, Tong, Yi, Liu, Bin, Guo, Pengfei, Gong, Xiao, Zhang, Guangze, Xue, Chunlai, Cheng, Buwen, Han, Genquan, Yeo, Yee-Chia
Published in IEEE electron device letters (01.11.2012)
Published in IEEE electron device letters (01.11.2012)
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Journal Article
Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 ^\hbox\ \hbox\hbox Passivation
Xiao Gong, Genquan Han, Fan Bai, Shaojian Su, Pengfei Guo, Yue Yang, Ran Cheng, Dongliang Zhang, Guangze Zhang, Chunlai Xue, Buwen Cheng, Jisheng Pan, Zheng Zhang, Eng Soon Tok, Antoniadis, D., Yee-Chia Yeo
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
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Journal Article
Dopant Segregation and Nickel Stanogermanide Contact Formation on \hbox^ \hbox\hbox Source/Drain
Han, Genquan, Su, Shaojian, Zhou, Qian, Guo, Pengfei, Yang, Yue, Zhan, Chunlei, Wang, Lanxiang, Wang, Wei, Wang, Qiming, Xue, Chunlai, Cheng, Buwen, Yeo, Yee-Chia
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
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Journal Article
Small SiGe quantum dots obtained by excimer laser annealing
Han, Genquan, Zeng, Yugang, Liu, Yan, Yu, Jinzhong, Cheng, Buwen, Yang, Haitao
Published in Journal of crystal growth (01.08.2008)
Published in Journal of crystal growth (01.08.2008)
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Journal Article