Reactions of Amine–Boranes with Oxalic Acid: Substitution on the N or B Atom Leads to Different Spiroborate Compounds
Zhao, Qianyi, Li, Jiaxuan, Ma, Na‐Na, Wei, Chang‐Geng, Xu, Ting, Li, Bao, Zhang, Jie, Chen, Xuenian
Published in European journal of inorganic chemistry (22.06.2018)
Published in European journal of inorganic chemistry (22.06.2018)
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Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
Tian-Jian Chu, Ting-Chang Chang, Tsung-Ming Tsai, Hsing-Hua Wu, Jung-Hui Chen, Kuan-Chang Chang, Tai-Fa Young, Kai-Hsang Chen, Yong-En Syu, Geng-Wei Chang, Yao-Feng Chang, Min-Chen Chen, Jyun-Hao Lou, Jhih-Hong Pan, Jian-Yu Chen, Ya-Hsiang Tai, Cong Ye, Hao Wang, Sze, Simon M.
Published in IEEE electron device letters (01.04.2013)
Published in IEEE electron device letters (01.04.2013)
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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Hsing-Hua Wu, Jung-Hui Chen, Yong-En Syu, Geng-Wei Chang, Tian-Jian Chu, Guan-Ru Liu, Yu-Ting Su, Min-Chen Chen, Jhih-Hong Pan, Jian-Yu Chen, Cheng-Wei Tung, Hui-Chun Huang, Ya-Hsiang Tai, Der-Shin Gan, Sze, S. M.
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
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Journal Article
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
Chang, Kuan-Chang, Zhang, Rui, Chang, Ting-Chang, Tsai, Tsung-Ming, Lou, J. C., Chen, Jung-Hui, Young, Tai-Fa, Chen, Min-Chen, Yang, Ya-Liang, Pan, Yin-Chih, Chang, Geng-Wei, Chu, Tian-Jian, Shih, Chih-Cheng, Chen, Jian-Yu, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Tai, Ya-Hsiang, Sze, Simon M.
Published in IEEE electron device letters (01.05.2013)
Published in IEEE electron device letters (01.05.2013)
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Journal Article
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
Tsung-Ming Tsai, Kuan-Chang Chang, Ting-Chang Chang, Yong-En Syu, Siang-Lan Chuang, Geng-Wei Chang, Guan-Ru Liu, Min-Chen Chen, Hui-Chun Huang, Shih-Kun Liu, Ya-Hsiang Tai, Der-Shin Gan, Ya-Liang Yang, Tai-Fa Young, Bae-Heng Tseng, Kai-Huang Chen, Ming-Jinn Tsai, Cong Ye, Hao Wang, Sze, S. M.
Published in IEEE electron device letters (01.12.2012)
Published in IEEE electron device letters (01.12.2012)
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Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors
Chang, Geng-Wei, Chang, Ting-Chang, Syu, Yong-En, Tsai, Tsung-Ming, Chang, Kuan-Chang, Tu, Chun-Hao, Jian, Fu-Yen, Hung, Ya-Chi, Tai, Ya-Hsiang
Published in Thin solid films (30.12.2011)
Published in Thin solid films (30.12.2011)
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Journal Article
Conference Proceeding
Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors
CHANG, Geng-Wei, CHANG, Ting-Chang, JHU, Jhe-Ciou, TSAI, Tsung-Ming, SYU, Yong-En, CHANG, Kuan-Chang, TAI, Ya-Hsiang, JIAN, Fu-Yen, HUNG, Ya-Chi
Published in IEEE electron device letters (01.04.2012)
Published in IEEE electron device letters (01.04.2012)
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Journal Article
On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure
CHANG, Geng-Wei, CHANG, Ting-Chang, SYU, Yong-En, TAI, Ya-Hsiang, JIAN, Fu-Yen
Published in IEEE electron device letters (01.08.2011)
Published in IEEE electron device letters (01.08.2011)
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Journal Article
Effect of Lateral Body Terminal on Silicon-Oxide-Nitride-Oxide-Silicon Thin-Film Transistors
LI, Hung-Wei, CHANG, Ting-Chang, CHANG, Geng-Wei, LIN, Chia-Sheng, TSAI, Tsung-Ming, JIAN, Fu-Yen, TAI, Ya-Hsiang, LEE, Ming-Hsien
Published in IEEE electron device letters (01.10.2011)
Published in IEEE electron device letters (01.10.2011)
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Journal Article
Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors
Chang, Geng-Wei, Chang, Ting-Chang, Jhu, Jhe-Ciou, Tsai, Tsung-Ming, Chang, Kuan-Chang, Syu, Yong-En, Tai, Ya-Hsiang, Jian, Fu-Yen, Hung, Ya-Chi
Published in IEEE transactions on electron devices (01.06.2014)
Published in IEEE transactions on electron devices (01.06.2014)
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Journal Article
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
TSAI, Tsung-Ming, CHANG, Kuan-Chang, TAI, Ya-Hsiang, GAN, Der-Shin, CONG YE, HAO WANG, SZE, Simon M, CHANG, Ting-Chang, CHANG, Geng-Wei, SYU, Yong-En, SU, Yu-Ting, LIU, Guan-Ru, LIAO, Kuo-Hsiao, CHEN, Min-Chen, HUANG, Hui-Chun
Published in IEEE electron device letters (01.12.2012)
Published in IEEE electron device letters (01.12.2012)
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Journal Article
Low Temperature Improvement Method on Zn: SiOx Resistive Random Access Memory Devices
CHANG, Kuan-Chang, TSAI, Tsung-Ming, SU, Yu-Ting, SYU, Yong-En, TUNG, Cheng-Wei, CHANG, Geng-Wei, CHEN, Min-Chen, HUANG, Hui-Chun, TAI, Ya-Hsiang, GAN, Der-Shin, WU, Jia-Jie, YING HU, CHANG, Ting-Chang, SZE, Simon M, WU, Hsing-Hua, CHEN, Kai-Huang, CHEN, Jung-Hui, YOUNG, Tai-Fa, CHU, Tian-Jian, CHEN, Jian-Yu, PAN, Chih-Hung
Published in IEEE electron device letters (01.04.2013)
Published in IEEE electron device letters (01.04.2013)
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Journal Article
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
Chang, Kuan-Chang, Chen, Jung-Hui, Tsai, Tsung-Ming, Chang, Ting-Chang, Huang, Syuan-Yong, Zhang, Rui, Chen, Kai-Huang, Syu, Yong-En, Chang, Geng-Wei, Chu, Tian-Jian, Liu, Guan-Ru, Su, Yu-Ting, Chen, Min-Chen, Pan, Jhih-Hong, Liao, Kuo-Hsiao, Tai, Ya-Hsiang, Young, Tai-Fa, Sze, Simon, Ai, Chi-Fong, Wang, Min-Chuan, Huang, Jen-Wei
Published in The Journal of supercritical fluids (01.01.2014)
Published in The Journal of supercritical fluids (01.01.2014)
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Journal Article
N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium―gallium―zinc―oxide thin film transistors
CHANG, Geng-Wei, CHANG, Ting-Chang, JHU, Jhe-Ciou, TSAI, Tsung-Ming, SYU, Yong-En, CHANG, Kuan-Chang, JIAN, Fu-Yen, HUNG, Ya-Chi, TAI, Ya-Hsiang
Published in Surface & coatings technology (25.09.2013)
Published in Surface & coatings technology (25.09.2013)
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Conference Proceeding
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in \hbox Resistance Switching Device
Yong-En Syu, Ting-Chang Chang, Tsung-Ming Tsai, Geng-Wei Chang, Kuan-Chang Chang, Jyun-Hao Lou, Ya-Hsiang Tai, Ming-Jinn Tsai, Ying-Lang Wang, Sze, S. M.
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
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Journal Article
Low Temperature Improvement Method on SiO} Resistive Random Access Memory Devices
Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Hsing-Hua Wu, Kai-Huang Chen, Jung-Hui Chen, Tai-Fa Young, Tian-Jian Chu, Jian-Yu Chen, Chih-Hung Pan, Yu-Ting Su, Yong-En Syu, Cheng-Wei Tung, Geng-Wei Chang, Min-Chen Chen, Hui-Chun Huang, Ya-Hsiang Tai, Der-Shin Gan, Jia-Jie Wu, Ying Hu, Sze, S. M.
Published in IEEE electron device letters (01.04.2013)
Published in IEEE electron device letters (01.04.2013)
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Journal Article
Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure
Chang, Yao-Feng, Tsai, Yu-Ting, Chang, Geng-Wei, Syu, Yong-En, Tai, Ya-Hsiang, Chang, Ting-Chang
Published in ECS journal of solid state science and technology (01.01.2012)
Published in ECS journal of solid state science and technology (01.01.2012)
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Journal Article
N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
Jhu, Jhe-Ciou, Chang, Ting-Chang, Chang, Geng-Wei, Tsai, Tsung-Ming, Syu, Yong-En, Jian, Fu-Yen, Chang, Kuan-Chang, Tai, Ya-Hsiang
Published in ECS transactions (02.04.2013)
Published in ECS transactions (02.04.2013)
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Journal Article
N2O Plasma Treatment Suppressed Temperature-Dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
Jhu, Jhe-Ciou, Chang, Ting-Chang, Chang, Geng-Wei, Syu, Yong-En, Tsai, Tsung-Ming, Jian, Fu-Yen, Chang, Kuan-Chang, Tai, Ya-Hsiang
Published in ECS transactions (01.01.2012)
Published in ECS transactions (01.01.2012)
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