GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
Gassenq, A, Gencarelli, F, Van Campenhout, J, Shimura, Y, Loo, R, Narcy, G, Vincent, B, Roelkens, G
Published in Optics express (03.12.2012)
Published in Optics express (03.12.2012)
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Journal Article
Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6
Gencarelli, F., Vincent, B., Souriau, L., Richard, O., Vandervorst, W., Loo, R., Caymax, M., Heyns, M.
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Journal Article
Conference Proceeding
Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx films
Gencarelli, F., Grandjean, D., Shimura, Y., Vincent, B., Banerjee, D., Vantomme, A., Vandervorst, W., Loo, R., Heyns, M., Temst, K.
Published in Journal of applied physics (07.03.2015)
Published in Journal of applied physics (07.03.2015)
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Journal Article
Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Gencarelli, F., Shimura, Y., Kumar, A., Vincent, B., Moussa, A., Vanhaeren, D., Richard, O., Bender, H., Vandervorst, W., Caymax, M., Loo, R., Heyns, M.
Published in Thin solid films (01.09.2015)
Published in Thin solid films (01.09.2015)
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Journal Article
In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates
Shimura, Y., Takeuchi, S., Nakatsuka, O., Vincent, B., Gencarelli, F., Clarysse, T., Vandervorst, W., Caymax, M., Loo, R., Jensen, A., Petersen, D.H., Zaima, S.
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Journal Article
Conference Proceeding
Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn
Gencarelli, F., Vincent, B., Demeulemeester, J., Vantomme, A., Moussa, A., Franquet, A., Kumar, A., Bender, H., Meersschaut, J., Vandervorst, W., Loo, R., Caymax, M., Temst, K., Heyns, M.
Published in ECS journal of solid state science and technology (01.01.2013)
Published in ECS journal of solid state science and technology (01.01.2013)
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Journal Article
Study of electrically active defects in epitaxial layers on silicon
Simoen, E., Dhayalan, S. K., Jayachandran, S., Gupta, S., Gencarelli, F., Hikavyy, A., Loo, R., Rosseel, E., Delabie, A., Caymax, M., Langer, R., Barla, K., Vrielinck, H., Lauwaert, J.
Published in 2016 China Semiconductor Technology International Conference (CSTIC) (01.03.2016)
Published in 2016 China Semiconductor Technology International Conference (CSTIC) (01.03.2016)
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Conference Proceeding
Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method
Gupta, S., Vincent, B., Yang, B., Lin, D., Gencarelli, F., Lin, J.-Y J., Chen, R., Richard, O., Bender, H., Magyari-Kope, B., Caymax, M., Dekoster, J., Nishi, Y., Saraswat, K. C.
Published in 2012 International Electron Devices Meeting (01.01.2012)
Published in 2012 International Electron Devices Meeting (01.01.2012)
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Conference Proceeding
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., Nguyen, N.D.
Published in Solid-state electronics (01.08.2015)
Published in Solid-state electronics (01.08.2015)
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Journal Article
Web Resource
On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1−x)Sn(x) unraveled with atom probe tomography
Kumar, A., Demeulemeester, J., Bogdanowicz, J., Bran, J., Melkonyan, D., Fleischmann, C., Gencarelli, F., Shimura, Y., Wang, W., Loo, R., Vandervorst, W.
Published in Journal of applied physics (14.07.2015)
Published in Journal of applied physics (14.07.2015)
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Journal Article
Ge1-xSnx Materials: Challenges and Applications
Loo, R., Vincent, B., Gencarelli, F., Merckling, C., Kumar, A., Eneman, G., Witters, L., Vandervorst, W., Caymax, M., Heyns, M., Thean, A.
Published in ECS journal of solid state science and technology (01.01.2013)
Published in ECS journal of solid state science and technology (01.01.2013)
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Journal Article
Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge{sub 1−x}Sn{sub x} films
Gencarelli, F., Heyns, M., Department of Metallurgy and Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, B-3001 Leuven, Grandjean, D., Shimura, Y., Vandervorst, W., Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Vincent, B., Loo, R., Banerjee, D., Vantomme, A., Temst, K.
Published in Journal of applied physics (07.03.2015)
Published in Journal of applied physics (07.03.2015)
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Journal Article
GeSn channel nMOSFETs: Material potential and technological outlook
Gupta, S., Vincent, B., Lin, D. H. C., Gunji, M., Firrincieli, A., Gencarelli, F., Magyari-Kope, B., Yang, B., Douhard, B., Delmotte, J., Franquet, A., Caymax, M., Dekoster, J., Nishi, Y., Saraswat, K. C.
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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Conference Proceeding
Identification of Deep Levels Associated with Extended and Point Defects in GeSn Epitaxial Layers Using DLTs
Gupta, Somya, Simoen, Eddy, Vrielinck, Henk, Merckling, Clement, Vincent, Benjamin, Gencarelli, Federica, Loo, Roger, Heyns, Marc
Published in ECS transactions (03.05.2013)
Published in ECS transactions (03.05.2013)
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Journal Article
(Invited) Ge1-xSnx Optical Devices: Growth and Applications
Shimura, Yosuke, Wang, Wei, Vandervorst, Wilfried, Gencarelli, Federica, Gassenq, Alban, Roelkens, Gunther, Vantomme, Andre, Caymax, Matty, Loo, Roger
Published in ECS transactions (01.01.2014)
Published in ECS transactions (01.01.2014)
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Journal Article
Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn
Gencarelli, Federica, Vincent, Benjamin, Demeulemeester, Jelle, Vantomme, Andre, Moussa, Alain, Franquet, Alexis, Kumar, Arul, Bender, Hugo, Meersschaut, Johan, Vandervorst, Wilfried, Loo, Roger, Caymax, Matty, Temst, Kristiaan, Heyns, Marc
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
Deep-Level Transient Spectroscopy of MOS Capacitors on GeSn Epitaxial Layers
Simoen, Eddy, Vincent, Benjamin, Merckling, Clement, Gencarelli, Federica, Chu, Lung-Ku, Loo, Roger
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
(Invited) Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors
Slotte, Jonatan, Tuomisto, Filip, Kujala, Jiri, Holm, Andreas M., Segercrantz, Natalie, Kilpeläinen, Simo, Kuitunen, Katja, Simoen, Eddy, Gencarelli, Federica, Loo, R, Shimura, Yosuke
Published in ECS transactions (07.08.2014)
Published in ECS transactions (07.08.2014)
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Journal Article
Ge 1-x Sn x Materials: Challenges and Applications
Loo, R., Vincent, B., Gencarelli, F., Merckling, C., Kumar, A., Eneman, G., Witters, L., Vandervorst, W., Caymax, M., Heyns, M., Thean, A.
Published in ECS journal of solid state science and technology (2013)
Published in ECS journal of solid state science and technology (2013)
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Journal Article