Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)
Auzelle, T, Oliva, M, John, P, Ramsteiner, M, Trampert, A, Geelhaar, L, Brandt, O
Published in Nanotechnology (10.09.2023)
Published in Nanotechnology (10.09.2023)
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Journal Article
High-frequency acoustic charge transport in GaAs nanowires
Büyükköse, S, Hernández-Mínguez, A, Vratzov, B, Somaschini, C, Geelhaar, L, Riechert, H, van der Wiel, W G, Santos, P V
Published in Nanotechnology (04.04.2014)
Published in Nanotechnology (04.04.2014)
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Journal Article
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
Fernández-Garrido, S, Kaganer, V M, Hauswald, C, Jenichen, B, Ramsteiner, M, Consonni, V, Geelhaar, L, Brandt, O
Published in Nanotechnology (14.11.2014)
Published in Nanotechnology (14.11.2014)
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Journal Article
A route for the top-down fabrication of ordered ultrathin GaN nanowires
Oliva, M, Kaganer, V, Pudelski, M, Meister, S, Tahraoui, A, Geelhaar, L, Brandt, O, Auzelle, T
Published in Nanotechnology (14.05.2023)
Published in Nanotechnology (14.05.2023)
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Journal Article
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
Musolino, M., van Treeck, D., Tahraoui, A., Scarparo, L., De Santi, C., Meneghini, M., Zanoni, E., Geelhaar, L., Riechert, H.
Published in Journal of applied physics (28.01.2016)
Published in Journal of applied physics (28.01.2016)
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Journal Article
Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils
Calabrese, G, Pettersen, S V, Pfüller, C, Ramsteiner, M, Grepstad, J K, Brandt, O, Geelhaar, L, Fernández-Garrido, S
Published in Nanotechnology (20.10.2017)
Published in Nanotechnology (20.10.2017)
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Journal Article
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
John, P, Gómez Ruiz, M, van Deurzen, L, Lähnemann, J, Trampert, A, Geelhaar, L, Brandt, O, Auzelle, T
Published in Nanotechnology (12.11.2023)
Published in Nanotechnology (12.11.2023)
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Journal Article
Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
Ruiz, M Gómez, Castro, A, Herranz, J, da Silva, A, John, P, Trampert, A, Brandt, O, Geelhaar, L, Lähnemann, J
Published in Nanotechnology (24.06.2024)
Published in Nanotechnology (24.06.2024)
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Journal Article
Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film
Wölz, M, Hauswald, C, Flissikowski, T, Gotschke, T, Fernández-Garrido, S, Brandt, O, Grahn, H. T, Geelhaar, L, Riechert, H
Published in Nano letters (10.06.2015)
Published in Nano letters (10.06.2015)
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Journal Article
Optical properties of GaN nanowires grown on chemical vapor deposited-graphene
Mancini, L, Morassi, M, Sinito, C, Brandt, O, Geelhaar, L, Song, Hyun-Gyu, Cho, Yong-Hoon, Guan, N, Cavanna, A, Njeim, J, Madouri, A, Barbier, C, Largeau, L, Babichev, A, Julien, F H, Travers, L, Oehler, F, Gogneau, N, Harmand, J-C, Tchernycheva, M
Published in Nanotechnology (24.05.2019)
Published in Nanotechnology (24.05.2019)
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Journal Article
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3
Calabrese, G, Gao, G, van Treeck, D, Corfdir, P, Sinito, C, Auzelle, T, Trampert, A, Geelhaar, L, Brandt, O, Fernández-Garrido, S
Published in Nanotechnology (15.03.2019)
Published in Nanotechnology (15.03.2019)
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Journal Article
Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)
Biermanns, A, Breuer, S, Trampert, A, Davydok, A, Geelhaar, L, Pietsch, U
Published in Nanotechnology (03.08.2012)
Published in Nanotechnology (03.08.2012)
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Journal Article
Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting
Kamimura, J, Bogdanoff, P, Ramsteiner, M, Geelhaar, L, Riechert, H
Published in Semiconductor science and technology (01.07.2016)
Published in Semiconductor science and technology (01.07.2016)
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Journal Article
Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry
AlHassan, Ali, Lähnemann, J, Leake, S, Küpers, H, Niehle, M, Bahrami, D, Bertram, F, Lewis, R B, Davtyan, A, Schülli, T U, Geelhaar, L, Pietsch, U
Published in Nanotechnology (22.05.2020)
Published in Nanotechnology (22.05.2020)
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Journal Article
Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles
Sobanska, M, Fernández-Garrido, S, Zytkiewicz, Z R, Tchutchulashvili, G, Gieraltowska, S, Brandt, O, Geelhaar, L
Published in Nanotechnology (29.06.2016)
Published in Nanotechnology (29.06.2016)
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Journal Article
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Musolino, M, Tahraoui, A, Fernández-Garrido, S, Brandt, O, Trampert, A, Geelhaar, L, Riechert, H
Published in Nanotechnology (27.02.2015)
Published in Nanotechnology (27.02.2015)
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Journal Article
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
Zettler, J K, Corfdir, P, Geelhaar, L, Riechert, H, Brandt, O, Fernández-Garrido, S
Published in Nanotechnology (06.11.2015)
Published in Nanotechnology (06.11.2015)
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Journal Article