Silicon Carbide as a Platform for Power Electronics
Eddy, C. R., Gaskill, D. K.
Published in Science (American Association for the Advancement of Science) (12.06.2009)
Published in Science (American Association for the Advancement of Science) (12.06.2009)
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Journal Article
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
Moon, J.S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P.M., Jernigan, G., Tedesco, J.L., VanMil, B., Myers-Ward, R., Eddy, C., Gaskill, D.K.
Published in IEEE electron device letters (01.06.2009)
Published in IEEE electron device letters (01.06.2009)
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Journal Article
Low-Phase-Noise Graphene FETs in Ambipolar RF Applications
Moon, J S, Curtis, D, Zehnder, D, Kim, S, Gaskill, D K, Jernigan, G G, Myers-Ward, R L, Eddy, C R, Campbell, P M, Lee, K.-M, Asbeck, P
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm
Moon, J.S., Curtis, D., Bui, S., Hu, M., Gaskill, D.K., Tedesco, J.L., Asbeck, P., Jernigan, G.G., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Campbell, P.M., Weng, X.
Published in IEEE electron device letters (01.04.2010)
Published in IEEE electron device letters (01.04.2010)
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Journal Article
Surface potential and thin film quality of low work function metals on epitaxial graphene
DeJarld, Matthew, Campbell, Paul M, Friedman, Adam L, Currie, Marc, Myers-Ward, Rachael L, Boyd, Anthony K, Rosenberg, Samantha G, Pavunny, Shojan P, Daniels, Kevin M, Gaskill, D K
Published in Scientific reports (07.11.2018)
Published in Scientific reports (07.11.2018)
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Journal Article
Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas
Nyakiti, L.O, Myers-Ward, R. L, Wheeler, V. D, Imhoff, E. A, Bezares, F.J, Chun, H, Caldwell, J. D, Friedman, A. L, Matis, B. R, Baldwin, J. W, Campbell, P. M, Culbertson, J. C, Eddy, C. R, Jernigan, G. G, Gaskill, D. K
Published in Nano letters (11.04.2012)
Published in Nano letters (11.04.2012)
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Journal Article
Graphene FETs for Zero-Bias Linear Resistive FET Mixers
Moon, J. S., Seo, H.-C, Antcliffe, M., Le, D., McGuire, C., Schmitz, A., Nyakiti, L. O., Gaskill, D. K., Campbell, P. M., Lee, K.-M, Asbeck, P.
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
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Journal Article
Terahertz ellipsometry and terahertz optical-Hall effect
Hofmann, T., Herzinger, C.M., Tedesco, J.L., Gaskill, D.K., Woollam, J.A., Schubert, M.
Published in Thin solid films (28.02.2011)
Published in Thin solid films (28.02.2011)
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Journal Article
Conference Proceeding
Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC
Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.
Published in Carbon (New York) (01.12.2014)
Published in Carbon (New York) (01.12.2014)
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Journal Article
Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection
Moon, J. S., Seo, H-C, Antcliffe, M., Lin, S., McGuire, C., Le, D., Nyakiti, L. O., Gaskill, D. K., Campbell, P. M., Lee, K-M, Asbeck, P.
Published in IEEE electron device letters (01.10.2012)
Published in IEEE electron device letters (01.10.2012)
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Journal Article
Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect
Kühne, P, Darakchieva, V, Yakimova, R, Tedesco, J D, Myers-Ward, R L, Eddy, Jr, C R, Gaskill, D K, Herzinger, C M, Woollam, J A, Schubert, M, Hofmann, T
Published in Physical review letters (16.08.2013)
Published in Physical review letters (16.08.2013)
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Journal Article
Plasma-based chemical modification of epitaxial graphene with oxygen functionalities
Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.
Published in Surface & coatings technology (25.02.2014)
Published in Surface & coatings technology (25.02.2014)
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Journal Article
Conference Proceeding
Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface
Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.
Published in Surface science (01.11.2013)
Published in Surface science (01.11.2013)
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Journal Article
Investigation of the Epitaxial Graphene/p-SiC Heterojunction
Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., Bezares, F. J., Jernigan, G. G., Tadjer, M. J., Imhoff, E. A., Koehler, A. D., Gaskill, D. K., Eddy, C. R., Kub, F. J.
Published in IEEE electron device letters (01.11.2012)
Published in IEEE electron device letters (01.11.2012)
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Journal Article
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8
VANMIL, B. L, LEW, K.-K, MYERS-WARD, R. L, HOLM, R. T, GASKILL, D. K, EDDY, C. R, WANG, L, ZHAO, P
Published in Journal of crystal growth (2009)
Published in Journal of crystal growth (2009)
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Journal Article
Graphene quantum dot bolometer for on-chip detection of organic radical
Hrubý, J., Laguta, O., Sojka, A., Marie, L. St, Myers-Ward, R., Gaskill, D. K., El Fatimy, A., Barbara, P., Neugebauer, P.
Published in Applied physics letters (18.03.2024)
Published in Applied physics letters (18.03.2024)
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Journal Article
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates
Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.
Published in Journal of crystal growth (01.01.2006)
Published in Journal of crystal growth (01.01.2006)
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Journal Article
Conference Proceeding
Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene
Huang, J, Alexander-Webber, J A, Janssen, T J B M, Tzalenchuk, A, Yager, T, Lara-Avila, S, Kubatkin, S, Myers-Ward, R L, Wheeler, V D, Gaskill, D K, Nicholas, R J
Published in Journal of physics. Condensed matter (29.04.2015)
Published in Journal of physics. Condensed matter (29.04.2015)
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Journal Article
Functionalized graphene as a model system for the two-dimensional metal-insulator transition
Osofsky, M S, Hernández, S C, Nath, A, Wheeler, V D, Walton, S G, Krowne, C M, Gaskill, D K
Published in Scientific reports (10.02.2016)
Published in Scientific reports (10.02.2016)
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Journal Article
Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene
Nyakiti, L.O., Wheeler, V.D., Garces, N.Y., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.
Published in MRS bulletin (01.12.2012)
Published in MRS bulletin (01.12.2012)
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