Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
Podlipskas, Aleksiej nas, R, Kadys, A, Mickevi ius, J, Jurkevi ius, J, Tamulaitis, G, Shur, M, Shatalov, M, Yang, J, Gaska, R
Published in Journal of physics. D, Applied physics (13.04.2016)
Published in Journal of physics. D, Applied physics (13.04.2016)
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Journal Article
Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers
Mickevi ius, J, Jurkevi ius, J, Kadys, A, Tamulaitis, G, Shur, M, Shatalov, M, Yang, J, Gaska, R
Published in Journal of physics. D, Applied physics (05.06.2015)
Published in Journal of physics. D, Applied physics (05.06.2015)
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Journal Article
Terahertz detection by GaN/AlGaN transistors
EL FATIMY, A, BOUBANGA TOMBET, S, HU, X, SELIUTA, D, VALUSIS, G, GAQUIERE, C, THERON, D, CAPPY, A, TEPPE, F, KNAP, W, VEKSLER, D. B, RUMYANTSEV, S, SHUR, M. S, PALA, N, GASKA, R, FAREED, Q
Published in Electronics letters (2006)
Published in Electronics letters (2006)
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Journal Article
Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
Mickevičius, J., Jurkevičius, J., Kadys, A., Tamulaitis, G., Shur, M., Shatalov, M., Yang, J., Gaska, R.
Published in AIP advances (01.04.2016)
Published in AIP advances (01.04.2016)
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Journal Article
Photoluminescence efficiency in AlGaN quantum wells
Tamulaitis, G., Mickevičius, J., Jurkevičius, J., Shur, M.S., Shatalov, M., Yang, J., Gaska, R.
Published in Physica. B, Condensed matter (15.11.2014)
Published in Physica. B, Condensed matter (15.11.2014)
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Journal Article
Conference Proceeding
RF power limiter using capacitively-coupled contacts III-nitride varactor
JAHAN, F, GAEVSKI, M, DENG, J, GASKA, R, SHUR, M, SIMIN, G
Published in Electronics letters (08.11.2012)
Published in Electronics letters (08.11.2012)
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Journal Article
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
Khan, M.A., Hu, X., Sumin, G., Lunev, A., Yang, J., Gaska, R., Shur, M.S.
Published in IEEE electron device letters (01.02.2000)
Published in IEEE electron device letters (01.02.2000)
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Journal Article
Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content
Mickevičius, J., Podlipskas, Ž., Aleksiejūnas, R., Kadys, A., Jurkevičius, J., Tamulaitis, G., Shur, M. S., Shatalov, M., Yang, J., Gaska, R.
Published in Journal of electronic materials (01.12.2015)
Published in Journal of electronic materials (01.12.2015)
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Journal Article
Deep ultraviolet light-emitting diodes
Hu, X., Deng, J., Zhang, J. P., Lunev, A., Bilenko, Y., Katona, T., Shur, M. S., Gaska, R., Shatalov, M., Khan, A.
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
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Journal Article
Conference Proceeding
AlGaN/GaN Microwave Switch With Hybrid Slow and Fast Gate Design
Sattu, A, Yang, J, Shur, M, Gaska, R, Simin, G
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
2- to 20-GHz Switch Using III-Nitride Capacitively Coupled Contact Varactors
Jahan, F., Yang, Y-H, Gaevski, M., Deng, J., Gaska, R., Shur, M., Simin, G.
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
Defect-related degradation of Deep-UV-LEDs
Meneghini, M., Barbisan, D., Bilenko, Y., Shatalov, M., Yang, J., Gaska, R., Meneghesso, G., Zanoni, E.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Journal Article
Conference Proceeding
Low-loss AlInN/GaN microwave switch
SATTU, A, BILLINGSLEY, D, DENG, J, YANG, J, SIMIN, G, SHUR, M, GASKA, R
Published in Electronics letters (21.07.2011)
Published in Electronics letters (21.07.2011)
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Journal Article
Surface acoustic wave velocity in single-crystal AlN substrates
Bu, G., Ciplys, D., Shur, M., Schowalter, L.J., Schujman, S., Gaska, R.
Published in IEEE transactions on ultrasonics, ferroelectrics, and frequency control (01.01.2006)
Published in IEEE transactions on ultrasonics, ferroelectrics, and frequency control (01.01.2006)
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Journal Article
Confocal spectroscopy of InGaN LED structures
Dobrovolskas, D, Mickevičius, J, Kuokštis, E, Tamulaitis, G, Shur, M, Shatalov, M, Yang, J, Gaska, R
Published in Journal of physics. D, Applied physics (06.04.2011)
Published in Journal of physics. D, Applied physics (06.04.2011)
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Journal Article
Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
Khan, M.A., Simin, G., Jinwei Yang, Jianping Zhang, Koudymov, A., Shur, M.S., Gaska, R., Xuhong Hu, Tarakji, A.
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
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Journal Article
Enhanced Power and Breakdown in III-N RF Switches With a Slow Gate
Sattu, A, Deng, J, Billingsley, D, Yang, J, Shur, M, Gaska, R, Simin, G
Published in IEEE electron device letters (01.06.2011)
Published in IEEE electron device letters (01.06.2011)
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Journal Article