Radioactive Nuclei Induced Soft Errors at Ground Level
Wrobel, F., Saigne, F., Gedion, M., Gasiot, J., Schrimpf, R.D.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations
Roche, P., Palau, J.M., Bruguier, G., Tavernier, C., Ecoffet, R., Gasiot, J.
Published in IEEE transactions on nuclear science (01.12.1999)
Published in IEEE transactions on nuclear science (01.12.1999)
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Journal Article
Extrapolation of radiation-induced EDFA gain degradation at space dose rate
CAUSSANEL, M, GILARD, O, SOTOM, M, SIGNORET, P, GASIOT, J
Published in Electronics letters (17.02.2005)
Published in Electronics letters (17.02.2005)
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Journal Article
Effect of switching from high to low dose rate on linear bipolar technology radiation response
Boch, J., Saigne, F., Schrimpf, R.D., Fleetwood, D.M., Ducret, S., Dusseau, L., David, J.P., Fesquet, J., Gasiot, J., Ecoffet, R.
Published in IEEE transactions on nuclear science (01.10.2004)
Published in IEEE transactions on nuclear science (01.10.2004)
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Journal Article
Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability
Touboul, A.D., Carlotti, J.F., Marinoni, M., Caussanel, M., Ramonda, M., Guasch, C., Bruguier, G., Bonnet, J., Saigné, F., Gasiot, J.
Published in Journal of non-crystalline solids (15.12.2005)
Published in Journal of non-crystalline solids (15.12.2005)
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Journal Article
Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage
Germanicus, R., Barde, S., Dusseau, L., Rolland, G., Barillot, C., Saigne, F., Ecoffet, R., Calvel, P., Fesquet, J., Gasiot, J.
Published in IEEE transactions on nuclear science (01.12.2002)
Published in IEEE transactions on nuclear science (01.12.2002)
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Journal Article
SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain
Roche, Ph, Palau, J.M., Belhaddad, K., Bruguier, G., Ecoffet, R., Gasiot, J.
Published in IEEE transactions on nuclear science (01.12.1998)
Published in IEEE transactions on nuclear science (01.12.1998)
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Journal Article
An integrated sensor using optically stimulated luminescence for in-flight dosimetry
Dusseau, L., Plattard, D., Vaille, J.R., Polge, G., Ranchoux, G., Saigne, F., Fesquet, J., Ecoffet, R., Gasiot, J.
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
Electrical characterization of charges in irradiated oxides by electrostatic force microscopy and Kelvin method
Dongmo, H., Carlotti, J.F., Bruguier, G., Guasch, C., Bonnet, J., Gasiot, J.
Published in Applied surface science (15.05.2003)
Published in Applied surface science (15.05.2003)
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Journal Article
Characterization of an integrated sensor using optically stimulated luminescence for in-flight dosimetry
Plattard, D., Ranchoux, G., Dusseau, L., Polge, G., Vaille, J.-R., Gasiot, J., Fesquet, J., Ecoffet, R., Iborra-Brassart, N.
Published in IEEE transactions on nuclear science (01.06.2002)
Published in IEEE transactions on nuclear science (01.06.2002)
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Journal Article
SEU critical charge and sensitive area in a submicron CMOS technology
Detcheverry, C., Dachs, C., Lorfevre, E., Sudre, C., Bruguier, G., Palau, J.M., Gasiot, J., Ecoffet, R.
Published in IEEE transactions on nuclear science (01.12.1997)
Published in IEEE transactions on nuclear science (01.12.1997)
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Journal Article
A new approach for the prediction of the neutron-induced SEU rate
Vial, C., Palau, J.M., Gasiot, J., Calvet, M.C., Fourtine, S.
Published in IEEE transactions on nuclear science (01.12.1998)
Published in IEEE transactions on nuclear science (01.12.1998)
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Journal Article
Analysis of the proton-induced permanent degradation in an optocoupler
Germanicus, R., Dusseau, L., Saigne, F., Barde, S., Ecoffet, R., Mion, O., Calvel, R., Fesquet, J., Gasiot, J.
Published in IEEE transactions on nuclear science (01.06.2002)
Published in IEEE transactions on nuclear science (01.06.2002)
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Journal Article
Study of basic mechanisms induced by an ionizing particle on simple structures
Hubert, G., Palau, J.-M., Roche, Ph, Sagnes, B., Gasiot, J., Calvet, M.C.
Published in IEEE transactions on nuclear science (01.06.2000)
Published in IEEE transactions on nuclear science (01.06.2000)
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Journal Article
High-energy particle irradiation of optically stimulated luminescent films at CERN
Dusseau, L., Polge, G., Mathias, S., Vaille, J.R., Germanicus, R., Broadhead, R., Camanzi, B., Glaser, M., Saigne, F., Fesquet, J., Gasiot, J.
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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Journal Article
Model for high-temperature radiation effects in n-p-n bipolar-junction transistors
Boch, J., Saigne, F., Mannoni, V., Giustino, F., Schrimpf, R.D., Dusseau, L., Galloway, K.F., Fesquet, J., Gasiot, J., Ecoffet, R.
Published in IEEE transactions on nuclear science (01.12.2002)
Published in IEEE transactions on nuclear science (01.12.2002)
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Journal Article
Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature
Boch, J., Saigne, E., Maurel, T., Giustino, F., Dusseau, L., Schrimpf, R.D., Galloway, K.F., David, J.P., Ecoffet, R., Fesquet, J., Gasiot, J.
Published in IEEE transactions on nuclear science (01.06.2002)
Published in IEEE transactions on nuclear science (01.06.2002)
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Journal Article
Threshold LET for SEU induced by low energy ions [in CMOS memories]
McNulty, P.J., Roche, P., Palau, J.M., Gasiot, J.
Published in IEEE transactions on nuclear science (01.12.1999)
Published in IEEE transactions on nuclear science (01.12.1999)
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Journal Article