Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance
Zhang, L., Dai, T., Gammon, P.M., Shah, V.A., Mawby, P.A., Antoniou, M.
Published in Power electronic devices and components (01.03.2023)
Published in Power electronic devices and components (01.03.2023)
Get full text
Journal Article
Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
Pérez-Tomás, A., Fontserè, A., Jennings, M.R., Gammon, P.M.
Published in Materials science in semiconductor processing (01.10.2013)
Published in Materials science in semiconductor processing (01.10.2013)
Get full text
Journal Article
Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications
Gammon, P.M., Chan, C.W., Gity, F., Trajkovic, T., Kilchytska, V., Fan, L., Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P.A., Gardner, J.W.
Published in E3S Web of Conferences (01.01.2017)
Published in E3S Web of Conferences (01.01.2017)
Get full text
Journal Article
Conference Proceeding
Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy
Lioliou, G., Renz, A.B., Shah, V.A., Gammon, P.M., Barnett, A.M.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (11.03.2022)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (11.03.2022)
Get full text
Journal Article
The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal
Renz, A.B., Vavasour, O.J., Gammon, P.M., Li, F., Dai, T., Antoniou, M., Baker, G.W.C., Bashar, E., Grant, N.E., Murphy, J.D., Mawby, P.A., Shah, V.A.
Published in Materials science in semiconductor processing (01.02.2021)
Published in Materials science in semiconductor processing (01.02.2021)
Get full text
Journal Article
Development, characterisation and simulation of wafer bonded Si-on-SiC substrates
Gammon, P.M., Chan, C.W., Li, F., Gity, F., Trajkovic, T., Pathirana, V., Flandre, D., Kilchytska, V.
Published in Materials science in semiconductor processing (01.05.2018)
Published in Materials science in semiconductor processing (01.05.2018)
Get full text
Journal Article
Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET
Fontserè, A., Pérez-Tomás, A., Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P.M., Jennings, M.R.
Published in Microelectronic engineering (01.10.2011)
Published in Microelectronic engineering (01.10.2011)
Get full text
Journal Article
Temperature behavior and modeling of ohmic contacts to Si + implanted n-type GaN
Pérez-Tomás, A., Placidi, M., Fontserè, A., Gammon, P.M., Jennings, M.R.
Published in Microelectronics and reliability (01.08.2011)
Published in Microelectronics and reliability (01.08.2011)
Get full text
Journal Article
SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator
PEREZ-TOMAS, A, JENNINGS, M. R, GAMMON, P. M, ROBERTS, G. J, MAWBY, P. A, MILLAN, J, GODIGNON, P, MONTSERRAT, J, MESTRES, N
Published in Microelectronic engineering (01.04.2008)
Published in Microelectronic engineering (01.04.2008)
Get full text
Journal Article