Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes
Schiavon, Dario, Binder, Michael, Peter, Matthias, Galler, Bastian, Drechsel, Philipp, Scholz, Ferdinand
Published in Physica Status Solidi. B: Basic Solid State Physics (01.02.2013)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.02.2013)
Get full text
Journal Article
Development of high-efficiency and high-power vertical light emitting diodes
Hahn, Berthold, Galler, Bastian, Engl, Karl
Published in Japanese Journal of Applied Physics (01.10.2014)
Published in Japanese Journal of Applied Physics (01.10.2014)
Get full text
Journal Article
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
Nippert, Felix, Karpov, Sergey, Pietzonka, Ines, Galler, Bastian, Wilm, Alexander, Kure, Thomas, Nenstiel, Christian, Callsen, Gordon, Straßburg, Martin, Lugauer, Hans-Jürgen, Hoffmann, Axel
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
Get full text
Journal Article
Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
Galler, Bastian, Lugauer, Hans-Jürgen, Binder, Michael, Hollweck, Richard, Folwill, Yannick, Nirschl, Anna, Gomez-Iglesias, Alvaro, Hahn, Berthold, Wagner, Joachim, Sabathil, Matthias
Published in Applied physics express (01.11.2013)
Published in Applied physics express (01.11.2013)
Get full text
Journal Article
Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence
Becht, Conny, Schwarz, Ulrich T., Binder, Michael, Galler, Bastian
Published in physica status solidi (b) (01.08.2023)
Published in physica status solidi (b) (01.08.2023)
Get full text
Journal Article
Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures
Nirschl, Anna, Binder, Michael, Schmid, Marina, Pietzonka, Ines, Lugauer, Hans-Jürgen, Zeisel, Roland, Sabathil, Matthias, Bougeard, Dominique, Galler, Bastian
Published in Optics express (08.02.2016)
Published in Optics express (08.02.2016)
Get full text
Journal Article
Effect of antimony on growth mode and properties of thick InGaN layers
Koch, Holger, Pietzonka, Ines, Galler, Bastian, Strassburg, Martin, Kalisch, Holger, Vescan, Andrei, Lugauer, Hans-Juergen
Published in Journal of crystal growth (15.03.2015)
Published in Journal of crystal growth (15.03.2015)
Get full text
Journal Article
Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes
Titkov, Ilya E., Karpov, Sergey Yu, Yadav, Amit, Zerova, Vera L., Zulonas, Modestas, Galler, Bastian, Strassburg, Martin, Pietzonka, Ines, Lugauer, Hans-Juergen, Rafailov, Edik U.
Published in IEEE journal of quantum electronics (01.11.2014)
Published in IEEE journal of quantum electronics (01.11.2014)
Get full text
Journal Article
Back Cover: Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes (Phys. Status Solidi B 2/2013)
Schiavon, Dario, Binder, Michael, Peter, Matthias, Galler, Bastian, Drechsel, Philipp, Scholz, Ferdinand
Published in physica status solidi (b) (01.02.2013)
Published in physica status solidi (b) (01.02.2013)
Get full text
Journal Article
OPTOELECTRONIC COMPONENT
MANDL MARTIN, STRASSBURG MARTIN, GALLER BASTIAN, KATZ SIMEON, DRECHSEL PHILIPP, BERGBAUER WERNER, SABATHIL MATTHIAS
Year of Publication 13.05.2014
Get full text
Year of Publication 13.05.2014
Patent
OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE
NA, Jong Ho, CHEN, Xiaojun, GALLER, Bastian, KAMARULZAMAN, Azharul Ariff, MOHD HANAFIAH, Noor Afifa
Year of Publication 12.09.2024
Get full text
Year of Publication 12.09.2024
Patent
Spin-dependent recombination between phosphorus donors in silicon and Si/SiO{2} interface states investigated with pulsed electrically detected electron double resonance
Hoehne, Felix, Huebl, Hans, Galler, Bastian, Stutzmann, Martin, Brandt, Martin S
Published in Physical review letters (29.01.2010)
Get more information
Published in Physical review letters (29.01.2010)
Journal Article
Method for producing a nitride semiconductor component, and a nitride semiconductor component
Gotschke, Tobias, Off, Juergen, Galler, Bastian, Lehnhardt, Thomas, Bergbauer, Werner
Year of Publication 12.11.2019
Get full text
Year of Publication 12.11.2019
Patent