Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices
Li, Dasheng, Sharma, Abhishek A, Gala, Darshil K, Shukla, Nikhil, Paik, Hanjong, Datta, Suman, Schlom, Darrell G, Bain, James A, Skowronski, Marek
Published in ACS applied materials & interfaces (25.05.2016)
Published in ACS applied materials & interfaces (25.05.2016)
Get full text
Journal Article
Impact Ionization Model for S-NDR based Threshold Switching Devices
Zou, Yuezhang, Gala, Darshil K., Bain, James A.
Published in 2019 Device Research Conference (DRC) (01.06.2019)
Published in 2019 Device Research Conference (DRC) (01.06.2019)
Get full text
Conference Proceeding
Low temperature electroformation of TaOx-based resistive switching devices
Gala, Darshil K., Sharma, Abhishek A., Li, Dasheng, Goodwill, Jonathan M., Bain, James A., Skowronski, Marek
Published in APL materials (01.01.2016)
Published in APL materials (01.01.2016)
Get full text
Journal Article
Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO 2 /TiO 2 Devices
Li, Dasheng, Sharma, Abhishek A., Gala, Darshil K., Shukla, Nikhil, Paik, Hanjong, Datta, Suman, Schlom, Darrell G., Bain, James A., Skowronski, Marek
Published in ACS applied materials & interfaces (25.05.2016)
Published in ACS applied materials & interfaces (25.05.2016)
Get full text
Journal Article