Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors
Das, Dipjyoti, Gaddam, Venkateswarlu, Jeon, Sanghun
Published in IEEE electron device letters (01.03.2021)
Published in IEEE electron device letters (01.03.2021)
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Journal Article
Demonstration of High Ferroelectricity (P } ~ 29 \mu C/cm2) in Zr Rich HfxZr1-xO2 Films
Das, Dipjyoti, Gaddam, Venkateswarlu, Jeon, Sanghun
Published in IEEE electron device letters (01.01.2020)
Published in IEEE electron device letters (01.01.2020)
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Journal Article
Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing
Mondal, Shubham, Md Mehedi Hasan Tanim, Baucom, Garrett, Dabas, Shaurya S, Gao, Jinghan, Venkateswarlu Gaddam, Liu, Jiangnan, Ross, Aiden, Long-Qing, Chen, Kim, Honggyu, Tabrizian, Roozbeh, Zetian Mi
Published in arXiv.org (28.08.2024)
Published in arXiv.org (28.08.2024)
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Journal Article
Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr 1-x O₂ Capacitors
Das, Dipjyoti, Gaddam, Venkateswarlu, Jeon, Sanghun
Published in IEEE electron device letters (01.03.2021)
Published in IEEE electron device letters (01.03.2021)
Get full text
Journal Article
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing
Gaddam, Venkateswarlu, Kim, Giuk, Kim, Taeho, Jung, Minhyun, Kim, Chaeheon, Jeon, Sanghun
Published in ACS applied materials & interfaces (28.09.2022)
Published in ACS applied materials & interfaces (28.09.2022)
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Journal Article
Demonstration of High Ferroelectricity (P$_{{r}}$ ~ 29 $\mu$ C/cm 2 ) in Zr Rich Hf x Zr 1–x O 2 Films
Das, Dipjyoti, Gaddam, Venkateswarlu, Jeon, Sanghun
Published in IEEE electron device letters (01.01.2020)
Published in IEEE electron device letters (01.01.2020)
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Journal Article
Sub 5 Å-EOT Hf ₓ Zr 1– x O₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process
Das, Dipjyoti, Buyantogtokh, Batzorig, Gaddam, Venkateswarlu, Jeon, Sanghun
Published in IEEE transactions on electron devices (01.01.2022)
Published in IEEE transactions on electron devices (01.01.2022)
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Journal Article
Sub 5 Å-EOT HfₓZr1-xO₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process
Das, Dipjyoti, Buyantogtokh, Batzorig, Gaddam, Venkateswarlu, Jeon, Sanghun
Published in IEEE transactions on electron devices (01.01.2022)
Published in IEEE transactions on electron devices (01.01.2022)
Get full text
Journal Article
Sub 5 Å-EOT Hf ₓ Zr1– x O₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process
Das, Dipjyoti, Buyantogtokh, Batzorig, Venkateswarlu Gaddam, Jeon, Sanghun
Published in IEEE transactions on electron devices (01.01.2022)
Published in IEEE transactions on electron devices (01.01.2022)
Get full text
Journal Article