High breakdown voltage p-n diodes on GaN on sapphire by MOCVD
Gupta, Chirag, Enatsu, Yuuki, Gupta, Geetak, Keller, Stacia, Mishra, Umesh K.
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
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Journal Article
Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
Dasgupta, Sansaptak, Lu, Jing, Nidhi, Raman, Ajay, Hurni, Christophe, Gupta, Geetak, Speck, James S, Mishra, Umesh K
Published in Applied physics express (01.03.2013)
Published in Applied physics express (01.03.2013)
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Journal Article
Establishment of design space for high current gain in III-N hot electron transistors
Gupta, Geetak, Ahmadi, Elaheh, Suntrup, Donald J, Mishra, Umesh K
Published in Semiconductor science and technology (01.01.2018)
Published in Semiconductor science and technology (01.01.2018)
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Journal Article
The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor
Soligo, Riccardo, Chowdhury, Srabanti, Gupta, Geetak, Mishra, Umesh, Saraniti, Marco
Published in IEEE electron device letters (01.07.2015)
Published in IEEE electron device letters (01.07.2015)
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Journal Article
Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base
Gupta, Geetak, Ahmadi, Elaheh, Hestroffer, Karine, Acuna, Edwin, Mishra, Umesh K.
Published in IEEE electron device letters (01.05.2015)
Published in IEEE electron device letters (01.05.2015)
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Journal Article
Short-Circuit Capability Demonstrated for GaN Power Switches
Bisi, Davide, Gritters, John, Hosoda, Tsutomu, Kamiyama, Masamichi, Cruse, Bill, Huang, YuLu, McKay, Jim, Gupta, Geetak, Lal, Rakesh, Neufeld, Carl, Zuk, Philip, Wu, YiFeng, Parikh, Primit, Mishra, Umesh
Published in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC) (14.06.2021)
Published in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC) (14.06.2021)
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Conference Proceeding
수직 게이트 모듈을 포함하는 측면 III-질화물 디바이스들
NEUFELD CARL JOSEPH, GUPTA GEETAK, SWENSON BRIAN L, BISI DAVIDE, LAL RAKESH K, MISHRA UMESH
Year of Publication 15.06.2021
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Year of Publication 15.06.2021
Patent
Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor
Lal, Shalini, Jing Lu, Gupta, Geetak, Thibeault, Brian J., DenBaars, Steven P., Mishra, Umesh K.
Published in IEEE electron device letters (01.12.2013)
Published in IEEE electron device letters (01.12.2013)
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Journal Article
Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers
Gupta, Geetak, Laurent, Matthew, Li, Haoran, Suntrup, Donald J., Acuna, Edwin, Keller, Stacia, Mishra, Umesh
Published in 72nd Device Research Conference (01.06.2014)
Published in 72nd Device Research Conference (01.06.2014)
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Conference Proceeding
N-POLAR DEVICES INCLUDING A DEPLETING LAYER WITH IMPROVED CONDUCTIVITY
BISI, Davide, MISHRA, Umesh, GUPTA, Geetak, RHODES, David, LAL, Rakesh
Year of Publication 03.08.2023
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Year of Publication 03.08.2023
Patent
Commercially Available N-polar GaN HEMT Epitaxy for RF Applications
Bisi, Davide, Romanczyk, Brian, Liu, Xiang, Gupta, Geetak, Brown-Heft, Tobias, Birkhahn, Ron, Lal, Rakesh, Neufeld, Carl J., Keller, Stacia, Parikh, Primit, Mishra, Umesh K., McCarthy, Lee
Published in 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (07.11.2021)
Published in 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (07.11.2021)
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Conference Proceeding