Search Results - "GROSCHOPF, JOHANNES" :: K.UTB vyhledávací portál

A CMOS DEVICE HAVING GATE INSULATION LAYERS OF DIFFERENT TYPE AND THICKNESS AND METHOD OF FORMING THE SAME

by GROSCHOPF JOHANNES, GRASSHOFF GUNTER, OTT ANDREAS, WAITE ANDREW, WEI ANDY, TRENTZSCH MARTIN
Year of Publication 15.07.2010

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Electrochemical planarization system comprising enhanced electrolyte flow

by GROSCHOPF JOHANNES, KIESEL AXEL
Year of Publication 13.08.2013

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Elektrochemisches Einebnungssystem mit verbesserter Elektrolytströmung

by Kiesel, Axel, Groschopf, Johannes
Year of Publication 14.02.2019

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ELECTROCHEMICAL PLANARIZATION SYSTEM COMPRISING ENHANCED ELECTROLYTE FLOW

by GROSCHOPF JOHANNES, KIESEL AXEL
Year of Publication 01.07.2010

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Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level

by GROSCHOPF JOHANNES F, PRINDLE CHRISTOPHER M, OTT ANDREAS R
Year of Publication 10.06.2014

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Self-aligned multiple gate transistor formed on a bulk substrate

by GROSCHOPF JOHANNES, SCHEIPER THILO, WEI ANDY, SCHROEDER VIVIEN, WERNER THOMAS
Year of Publication 25.03.2014

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Planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurry

by GROSCHOPF JOHANNES, KITSCHE MARCO, STEFFEN KATJA, HUESELITZ RICO
Year of Publication 19.11.2013

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Replacement Gate Approach for High-K Metal Gate Stacks by Using a Multi-Layer Contact Level

by GROSCHOPF JOHANNES F, PRINDLE CHRISTOPHER M, OTT ANDREAS R
Year of Publication 22.08.2013

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Semiconductor Device with DRAM Word Lines and Gate Electrodes in Non-Memory Regions of the Device Comprised of a Metal, and Methods of Making Same

by BAARS PETER, GROSCHOPF JOHANNES F, PRINDLE CHRISTOPHER M
Year of Publication 28.02.2013

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Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers

by REIMER BERTHOLD, GROSCHOPF JOHANNES, PRESS PATRICK, HEMPEL KLAUS, SCHROEDER VIVIEN
Year of Publication 22.01.2013

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TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE APPROACH BY MODIFYING A REMOVAL RATE OF STRESSED DIELECTRIC OVERLAYERS

by REIMER BERTHOLD, GROSCHOPF JOHANNES, PRESS PATRICK, HEMPEL KLAUS, SCHROEDER VIVIEN
Year of Publication 08.11.2012

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Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers

by Hempel, Klaus, Press, Patrick, Schroeder, Vivien, Reimer, Berthold, Groschopf, Johannes
Year of Publication 21.08.2012

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Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers

by REIMER BERTHOLD, GROSCHOPF JOHANNES, PRESS PATRICK, HEMPEL KLAUS, SCHROEDER VIVIEN
Year of Publication 21.08.2012

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Self-Aligned Multiple Gate Transistor Formed on a Bulk Substrate

by GROSCHOPF JOHANNES, SCHEIPER THILO, WEI ANDY, SCHROEDER VIVIEN, WERNER THOMAS
Year of Publication 01.12.2011

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Method for reducing polish-induced damage in a contact structure by forming a capping layer

by Frohberg, Kai, Bau, Sandra, Groschopf, Johannes
Year of Publication 05.05.2009

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Method for reducing polish-induced damage in a contact structure by forming a capping layer

by BAU SANDRA, GROSCHOPF JOHANNES, FROHBERG KAI
Year of Publication 05.05.2009

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Planarization of a Material System in a Semiconductor Device by Using a Non-Selective In Situ Prepared Slurry

by GROSCHOPF JOHANNES, KITSCHE MARCO, STEFFEN KATJA, HUESELITZ RICO
Year of Publication 03.11.2011

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TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE APPROACH BY MODIFYING A REMOVAL RATE OF STRESSED DIELECTRIC OVERLAYERS

by REIMER BERTHOLD, GROSCHOPF JOHANNES, PRESS PATRICK, HEMPEL KLAUS, SCHROEDER VIVIEN
Year of Publication 30.12.2010

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Elektrochemisches Einebnungssystem mit verbesserter Elektrolytströmung

by GROSCHOPF, JOHANNES, KIESEL, AXEL
Year of Publication 08.07.2010

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Method for forming offset spacers for semiconductor device arrangements

by GROSCHOPF JOHANNES, ZHONG HUICAI, FISHER PHILIP A, BROWN LAURA A
Year of Publication 03.08.2010

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