InN/InAlN heterostructures for new generation of fast electronics
Kuzmik, J., Stoklas, R., Hasenöhrl, S., Dobročka, E., Kučera, M., Eliáš, P., Gucmann, F., Gregušová, D., Haščík, Š., Kaleta, A., Chauvat, M. P., Kret, S., Ruterana, P.
Published in Journal of applied physics (28.06.2024)
Published in Journal of applied physics (28.06.2024)
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Journal Article
InN: Breaking the limits of solid-state electronics
Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., Georgakilas, A.
Published in AIP advances (01.12.2021)
Published in AIP advances (01.12.2021)
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Journal Article
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Kuzmík, J.
Published in Applied surface science (31.12.2017)
Published in Applied surface science (31.12.2017)
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Journal Article
Growth and performance of n++ GaN cap layer for HEMTs applications
Kuzmík, J., Blaho, M., Gregušová, D., Eliáš, P., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Gucmann, F., Zápražný, Z., Dobročka, E., Kyambaki, M., Konstantinidis, G.
Published in Materials science in semiconductor processing (01.01.2025)
Published in Materials science in semiconductor processing (01.01.2025)
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Journal Article
Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs
Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., Kuzmík, J.
Published in Applied surface science (30.10.2020)
Published in Applied surface science (30.10.2020)
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Journal Article
Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors
Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J. -F., Grandjean, N., Kuzmík, J.
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition
Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.
Published in Applied surface science (15.12.2018)
Published in Applied surface science (15.12.2018)
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Journal Article
Technology and application of in-situ AlOx layers on III-V semiconductors
Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, M., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I., Dobročka, E., Gregušová, D.
Published in Applied surface science (15.12.2018)
Published in Applied surface science (15.12.2018)
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Journal Article
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P.
Published in Applied surface science (15.02.2017)
Published in Applied surface science (15.02.2017)
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Journal Article
Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics
Blaho, M, Gregušová, D, Haš ík, Š, Seifertová, A, apajna, M, Šoltýs, J, Šatka, A, Nagy, L, Chvála, A, Marek, J, Carlin, J-F, Grandjean, N, Konstantinidis, G, Kuzmík, J
Published in Semiconductor science and technology (01.06.2016)
Published in Semiconductor science and technology (01.06.2016)
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Journal Article
Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures
Mikulics, M, Hardtdegen, H, Adam, R, Grützmacher, D, Gregušová, D, Novák, J, Kordoš, P, Sofer, Z, Serafini, J, Zhang, J, Sobolewski, Roman, Marso, M
Published in Semiconductor science and technology (01.04.2014)
Published in Semiconductor science and technology (01.04.2014)
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Journal Article
Magnetic elements for switching magnetization magnetic force microscopy tips
Cambel, V., Eliáš, P., Gregušová, D., Martaus, J., Fedor, J., Karapetrov, G., Novosad, V.
Published in Journal of magnetism and magnetic materials (01.09.2010)
Published in Journal of magnetism and magnetic materials (01.09.2010)
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Journal Article
Non-uniform distribution of induced strain in a gate-recessed AlGaN GaN structure evaluated by micro-PL measurements
Mikulics, M, Hardtdegen, H, Gregušová, D, Sofer, Z, Šimek, P, Trellenkamp, St, Grützmacher, D, Lüth, H, Kordoš, P, Marso, M
Published in Semiconductor science and technology (10.10.2012)
Published in Semiconductor science and technology (10.10.2012)
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Journal Article
Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements
Gregušová, D, Stoklas, R, Eickelkamp, M, Fox, A, Novák, J, Vescan, A, Grützmacher, D, Kordoš, P
Published in Semiconductor science and technology (01.07.2009)
Published in Semiconductor science and technology (01.07.2009)
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Journal Article
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation
CICO, K, GREGUSOVA, D, KUZMIK, J, JURKOVIC, M, ALEXEWICZ, A, DI FORTE POISSON, M.-A, POGANY, D, STRASSER, G, DELAGE, S, FRÖHLICH, K
Published in Solid-state electronics (2012)
Published in Solid-state electronics (2012)
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Journal Article
AFM nanooxidation process – Technology perspective for mesoscopic structures
Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D.
Published in Surface science (01.07.2007)
Published in Surface science (01.07.2007)
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Journal Article
Conference Proceeding
Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement
Mikulics, M., Kordoš, P., Gregušová, D., Sofer, Z., Winden, A., Trellenkamp, St, Moers, J., Mayer, J., Hardtdegen, H.
Published in Applied physics letters (25.01.2021)
Published in Applied physics letters (25.01.2021)
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Journal Article
High-temperature performance of AlGaN/GaN HFETs and MOSHFETs
Donoval, D., Florovič, M., Gregušová, D., Kováč, J., Kordoš, P.
Published in Microelectronics and reliability (01.10.2008)
Published in Microelectronics and reliability (01.10.2008)
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Journal Article
Vortex Dynamics in Ferromagnetic Nanoelements Observed by Micro-Hall Probes
Ščepka, T., Šoltýs, J., Precner, M., Fedor, J., Tóbik, J., Gregušová, D., Gucmann, F., Kúdela, R., Cambel, V.
Published in Acta physica Polonica, A (01.07.2014)
Published in Acta physica Polonica, A (01.07.2014)
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