High Mobility Strained Ge pMOSFETs With High- \kappa /Metal Gate
Nicholas, G., Grasby, T.J., Fulgoni, D.J.F., Beer, C.S., Parsons, J., Meuris, M., Heyns, M.M.
Published in IEEE electron device letters (01.09.2007)
Published in IEEE electron device letters (01.09.2007)
Get full text
Journal Article
High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
Morris, R J H, Grasby, T J, Hammond, R, Myronov, M, Mironov, O A, Leadley, D R, Whall, T E, Parker, E H C, Currie, M T, Leitz, C W, Fitzgerald, E A
Published in Semiconductor science and technology (01.10.2004)
Published in Semiconductor science and technology (01.10.2004)
Get full text
Journal Article
Investigation of the injection velocity of holes in strained Si pMOSFETs
Nicholas, G, Grasby, T J, Parker, E H C, Whall, T E, Paul, D J, Evans, A G R, von Känel, H
Published in Semiconductor science and technology (01.05.2005)
Published in Semiconductor science and technology (01.05.2005)
Get full text
Journal Article
Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect
Tang, Y T, Cerrina, C, Waite, A M, Afshar-Hanaee, N, Evans, A G R, Grasby, T J, Parker, E H C, Whall, T E, Norris, D J, Chang, A C K, Cullis, A G
Published in Semiconductor science and technology (01.08.2005)
Published in Semiconductor science and technology (01.08.2005)
Get full text
Journal Article
SiGe(C) epitaxial technologies—issues and prospectives
Get full text
Journal Article
Conference Proceeding
Impact ionisation in strained SiGe pMOSFETs
NICHOLAS, G, DOBBIE, A, GRASBY, T. J, WHALL, T. E, PARKER, E. H. C
Published in Electronics letters (04.08.2005)
Published in Electronics letters (04.08.2005)
Get full text
Journal Article
Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates
Parsons, J., Beer, C.S., Leadley, D.R., Capewell, A.D., Grasby, T.J.
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
Get full text
Journal Article
Conference Proceeding
Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
von Haartman, M., Malm, B.G., Hellström, P.-E., Östling, M., Grasby, T.J., Whall, T.E., Parker, E.H.C., Lyutovich, K., Oehme, M., Kasper, E.
Published in Solid-state electronics (01.05.2007)
Published in Solid-state electronics (01.05.2007)
Get full text
Journal Article
Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
PREST, M. J, PALMER, M. J, ASENOV, A, BARKER, J. R, GRASBY, T. J, PHILLIPS, P. J, MIRONOV, O. A, PARKER, E. H. C, WHALL, T. E, WAITE, A. M, EVANS, A. G. R, WATLING, J. R
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Get full text
Conference Proceeding
Journal Article
Evidence of reduced self-heating in strained Si MOSFETs
Nicholas, G., Grasby, T.J., Parker, E.H.C., Whall, T.E., Skotnicki, T.
Published in IEEE electron device letters (01.09.2005)
Published in IEEE electron device letters (01.09.2005)
Get full text
Journal Article
On the electron mobility enhancement in biaxially strained Si MOSFETs
Driussi, F., Esseni, D., Selmi, L., Hellström, P.-E., Malm, G., Ha˚llstedt, J., Östling, M., Grasby, T.J., Leadley, D.R., Mescot, X.
Published in Solid-state electronics (01.04.2008)
Published in Solid-state electronics (01.04.2008)
Get full text
Journal Article
High Mobility Strained Ge pMOSFETs With High-K/Metal Gate
Nicholas, G, Grasby, T J, Fulgoni, D.J.F., Beer, C S, Parsons, J, Meuris, M, Heyns, M M
Published in IEEE electron device letters (01.09.2007)
Published in IEEE electron device letters (01.09.2007)
Get full text
Journal Article
Impact ionisation in strained SiGe pMOSFETs
Nicholas, G, Dobbie, A, Grasby, T J, Whall, T E, Parker, E H C
Published in Electronics letters (04.08.2005)
Get full text
Published in Electronics letters (04.08.2005)
Journal Article
On the electron mobility enhancement in biaxially strained Si MOSFETs : Ultimate integration on silicon conference 2007
DRIUSSI, F, ESSENI, D, SELMI, L, HELLSTROM, P.-E, MAIM, G, HALLSTEDT, J, OSTLING, M, GRASBY, T. J, LEADLEY, D. R, MESCOT, X
Published in Solid-state electronics (2008)
Get full text
Published in Solid-state electronics (2008)
Journal Article
SiGe pMOSFETs fabricated on novel SiGe virtual substrates grown on 10μm x 10μm pillars
STRAUBE, U. N, WAITE, A. M, CULLIS, T, LLOYD, N. S, CROUCHER, S. G, TANG, Y. T, EVANS, A. G. R, GRASBY, T. J, WHALL, T. E, PARKER, E. C. H, NORRIS, D
Year of Publication 2002
Get full text
Year of Publication 2002
Conference Proceeding