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Published in Japanese Journal of Applied Physics (01.05.2012)
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Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier
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Published in IEEE transactions on electron devices (01.09.2010)
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Published in Japanese Journal of Applied Physics (1995)
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Proposal and Performance Analysis of Normally Off [Formula Omitted] GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier
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Published in IEEE transactions on electron devices (01.11.2002)
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Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors
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Published in Japanese Journal of Applied Physics (01.05.2012)
Published in Japanese Journal of Applied Physics (01.05.2012)
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Independent control of InAs quantum dot density and size on Al sub(x)Ga sub(1-x)As surfaces
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Published in Journal of materials science. Materials in electronics (01.09.2008)
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Independent control of InAs quantum dot density and size on AlxGa1–xAs surfaces
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Published in Journal of materials science. Materials in electronics (01.09.2008)
Published in Journal of materials science. Materials in electronics (01.09.2008)
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Conference Proceeding
Proposal and Performance Analysis of Normally Off \hbox^ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier
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Published in IEEE transactions on electron devices (01.09.2010)
Published in IEEE transactions on electron devices (01.09.2010)
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