Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier
Liu, XiaoPing, Fan, GuangHan, Zheng, ShuWen, Gong, ChangChun, Lu, TaiPing, Zhang, YunYan, Xu, YiQin, Zhang, Tao
Published in Science China. Technological sciences (2013)
Published in Science China. Technological sciences (2013)
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Journal Article
Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells
Xu, YiQin, Fan, GuangHan, Zhou, DeTao, Li, Xin, Lu, TaiPing, Zhao, Fang, Zhang, YunYan, Zheng, ShuWen, Gong, ChangChun
Published in Chinese science bulletin (01.07.2012)
Published in Chinese science bulletin (01.07.2012)
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Journal Article