Photoluminescence wavelength dependence on layer structure of GaP/AlP modulated superlattices
KIM, J. H, ASAHI, H, DOI, K, ASAMI, K, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.08.1996)
Published in Japanese Journal of Applied Physics (01.08.1996)
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Journal Article
Radiation hardnessin InGaAsP lasers
Gonda, S.-i.
Published in 2008 20th International Conference on Indium Phosphide and Related Materials (01.05.2008)
Published in 2008 20th International Conference on Indium Phosphide and Related Materials (01.05.2008)
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Conference Proceeding
Gas source molecular beam epitaxy growth of GaN on C-, A-, R- and M-plane sapphire and silica glass substrates
IWATA, K, ASAHI, H, ASAMI, K, KUROIWA, R, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Journal Article
High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electron diffraction patterns
IWATA, K, ASAHI, H, YU, S. J, ASAMI, K, FUJITA, H, FUSHIDA, M, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.03.1996)
Published in Japanese Journal of Applied Physics (01.03.1996)
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Journal Article
Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers
Gonda, S.-i., Tsutsumi, H., Ito, Y., Kume, K., Ishigami, R., Makino, T., Morita, T., Kan, H.
Published in 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials (01.05.2007)
Published in 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials (01.05.2007)
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Conference Proceeding
Very low resistance ohmic contacts to n-GaN
HWE JAE LEE, SOON JAE YU, ASAHI, H, GONDA, S.-I, YOUNG HWAN KIM, JIN KOO RHEE, NOH, S. J
Published in Journal of electronic materials (01.07.1998)
Published in Journal of electronic materials (01.07.1998)
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Phonon behavior and interfacial stress in the strained (InAs) m/(GaAs) n ultrathin superlattices
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Conference Proceeding
Self-organized dot/columnar structures and quasi-perfect CuPt-type ordering in (GaP)n(InP)n superlattices grown on GaAs (N11) substrates by gas source molecular epitaxy
KIM, S.-J, ASAHI, H, TAKEMOTO, M, ASAMI, K, TAKEUCHI, M, GONDA, S.-I
Published in Japanese journal of applied physics (1996)
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Published in Japanese journal of applied physics (1996)
Journal Article
TlGaP layers grown on GaAs substrates by gas source molecular beam epitaxy
FUSHIDA, M, ASAHI, H, YAMAMOTO, K, KOH, I, ASAMI, K, GONDA, S.-I, OE, K
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Journal Article
Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy
KUROIWA, R, ASAHI, H, IWATA, K, KIM, S.-J, NOH, J.-H, ASAMI, K, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Conference Proceeding
Journal Article
Scanning tunneling microscopy/spectroscopy study of self-organized quantum dot structures formed in GaP/InP short-period superlattices
NOH, J.-H, ASAHI, H, KIM, S.-J, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Conference Proceeding
Journal Article
MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine
Kaneko, Tadaaki, Asahi, Hajime, Itani, Yasushi, Okuno, Yasutoshi, Gonda, Shun-ichi
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
High density of self-organized quantum dots formed in (GaP) n(InP)m short period superlattices grown on GaAs (N11)
KIM, S.-J, ASAHI, H, TAKEMOTO, M, NOH, J.-H, ASAMI, K, GONDA, S.-I
Published in Applied surface science (1997)
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Published in Applied surface science (1997)
Conference Proceeding
Thermal stability of Si/Ge sub n /Si heterostructures by photoreflectance
Asami, Kumiko, Miki, Kazushi, Sakamoto, Kunichiro, Sakamoto, T, Gonda, S I
Published in Journal of electronic materials (01.01.1992)
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Published in Journal of electronic materials (01.01.1992)
Journal Article
Electroreflectance study of AlxGa1-x-yInyP alloy
ASAMI, K, ASAHI, H, GONDA, S.-I, KAWAMURA, Y, TANAKA, H
Published in Solid state communications (01.04.1989)
Published in Solid state communications (01.04.1989)
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