Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures
Courtade, L., Turquat, Ch, Muller, Ch, Lisoni, J.G., Goux, L., Wouters, D.J., Goguenheim, D., Roussel, P., Ortega, L.
Published in Thin solid films (01.04.2008)
Published in Thin solid films (01.04.2008)
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Journal Article
MOSFET layout modifications for hump effect removal
Carmona, M., Rebuffat, B., Delalleau, J., Gagliano, O., Lopez, L., Ogier, J.-L., Goguenheim, D.
Published in Microelectronic engineering (01.09.2013)
Published in Microelectronic engineering (01.09.2013)
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Journal Article
Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions
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Journal Article
Conference Proceeding
Degradation and recovery of polarization under synchrotron x rays in SrBi2Ta2O9 ferroelectric capacitors
Menou, N., Castagnos, A.-M., Muller, Ch, Goguenheim, D., Goux, L., Wouters, D. J., Hodeau, J.-L., Dooryhee, E., Barrett, R.
Published in Journal of applied physics (15.02.2005)
Published in Journal of applied physics (15.02.2005)
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Journal Article
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories
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Journal Article
Conference Proceeding
Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node
Bravaix, A, Guérin, C, Goguenheim, D, Huard, V, Roy, D, Besset, C, Renard, S, Randriamihaja, Y M, Vincent, E
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETs
Bravaix, A, Goguenheim, D, Revil, N, Vincent, E
Published in Microelectronic engineering (01.04.2004)
Published in Microelectronic engineering (01.04.2004)
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Journal Article
Conference Proceeding
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs
Bravaix, A., Goguenheim, D., Denais, M., Huard, V., Parthasarathy, C., Perrier, F., Revil, N., Vincent, E.
Published in Microelectronics and reliability (01.09.2005)
Published in Microelectronics and reliability (01.09.2005)
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Journal Article
Conference Proceeding
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies
Goguenheim, D., Bravaix, A., Gomri, S., Moragues, J.M., Monserie, C., Legrand, N., Boivin, P.
Published in Microelectronics and reliability (01.03.2005)
Published in Microelectronics and reliability (01.03.2005)
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Journal Article
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs
Bravaix, A., Goguenheim, D., Revil, N., Vincent, E.
Published in Microelectronics and reliability (01.09.2001)
Published in Microelectronics and reliability (01.09.2001)
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Journal Article
Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETS
BRAVAIX, A, GOGUENHEIM, D, REVIL, N, VINCENT, E
Published in Microelectronic engineering (01.11.2001)
Published in Microelectronic engineering (01.11.2001)
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Conference Proceeding
Journal Article
Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick gate-oxide CMOS technologies
Bravaix, A., Trapes, C., Goguenheim, D., Revil, N., Vincent, E.
Published in Microelectronics and reliability (01.08.2003)
Published in Microelectronics and reliability (01.08.2003)
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Journal Article
Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx
PIC, N, GLACHANT, A, NITSCHE, S, HOARAU, J. Y, GOGUENHEIM, D, VUILLAUME, D, SIBAI, A, AUTRAN, J.-L
Published in Journal of non-crystalline solids (01.02.2001)
Published in Journal of non-crystalline solids (01.02.2001)
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Conference Proceeding
Journal Article
Comparison of oxide leakage currents induced by ion implantation and high field electric stress
Goguenheim, D, Bravaix, A, Monserie, C, Moragues, J.M, Lambert, P, Boivin, P
Published in Solid-state electronics (01.08.2001)
Published in Solid-state electronics (01.08.2001)
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Journal Article