Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Avit, Geoffrey, Lekhal, Kaddour, André, Yamina, Bougerol, Catherine, Réveret, François, Leymarie, Joël, Gil, Evelyne, Monier, Guillaume, Castelluci, Dominique, Trassoudaine, Agnès
Published in Nano letters (12.02.2014)
Published in Nano letters (12.02.2014)
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Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE
Semlali, Elias, Avit, Geoffrey, André, Yamina, Gil, Evelyne, Moskalenko, Andriy, Shields, Philip, Dubrovskii, Vladimir G, Cattoni, Andrea, Harmand, Jean-Christophe, Trassoudaine, Agnès
Published in Nanotechnology (24.06.2024)
Published in Nanotechnology (24.06.2024)
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Long indium-rich InGaAs nanowires by SAG-HVPE
Chereau, Emmanuel, Grégoire, Gabin, Avit, Geoffrey, Taliercio, Thierry, Staudinger, Philipp, Schmid, Heinz, Bougerol, Catherine, Trassoudaine, Agnès, Gil, Evelyne, LaPierre, Ray R, André, Yamina
Published in Nanotechnology (19.02.2024)
Published in Nanotechnology (19.02.2024)
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Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy
Qiang, Lanpeng, Chereau, Emmanuel, Regreny, Philippe, Avit, Geoffrey, Trassoudaine, Agnès, Gil, Evelyne, André, Yamina, Bluet, Jean-Marie, Albertini, David, Brémond, Georges
Published in Journal of applied physics (21.07.2024)
Published in Journal of applied physics (21.07.2024)
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Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy
Hijazi, Hadi, Zeghouane, Mohammed, Jridi, Jihen, Gil, Evelyne, Castelluci, Dominique, Dubrovskii, Vladimir G, Bougerol, Catherine, André, Yamina, Trassoudaine, Agnès
Published in Nanotechnology (09.04.2021)
Published in Nanotechnology (09.04.2021)
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Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas
TRASSOUDAINE, Agnès, CADORET, Robert, GIL-LAFON, Evelyne
Published in Journal of crystal growth (02.01.2004)
Published in Journal of crystal growth (02.01.2004)
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Journal Article
Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n‑Type or p‑Type?
Hijazi, Hadi, Monier, Guillaume, Gil, Evelyne, Trassoudaine, Agnès, Bougerol, Catherine, Leroux, Christine, Castellucci, Dominique, Robert-Goumet, Christine, Hoggan, Philip E, André, Yamina, Isik Goktas, Nebile, LaPierre, Ray R, Dubrovskii, Vladimir G
Published in Nano letters (10.07.2019)
Published in Nano letters (10.07.2019)
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Journal Article
Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays
Grégoire, Gabin, Zeghouane, Mohammed, Goosney, Curtis, Goktas, Nebile Isik, Staudinger, Philipp, Schmid, Heinz, Moselund, Kirsten, Taliercio, Thierry, Tournié, Eric, Trassoudaine, Agnès, Gil, Evelyne, Lapierre, Ray, André, Yamina
Published in Crystal growth & design (27.07.2021)
Published in Crystal growth & design (27.07.2021)
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Journal Article
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
Gil, Evelyne, Dubrovskii, Vladimir G, Avit, Geoffrey, André, Yamina, Leroux, Christine, Lekhal, Kaddour, Grecenkov, Jurij, Trassoudaine, Agnès, Castelluci, Dominique, Monier, Guillaume, Ramdani, Reda M, Robert-Goumet, Christine, Bideux, Luc, Harmand, Jean Christophe, Glas, Frank
Published in Nano letters (09.07.2014)
Published in Nano letters (09.07.2014)
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Journal Article
Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy
Zeghouane, Mohammed, Grégoire, Gabin, Chereau, Emmanuel, Avit, Geoffrey, Staudinger, Philipp, Moselund, Kirsten E., Schmid, Heinz, Coulon, Pierre-Marie, Shields, Philip, Isik Goktas, Nebile, LaPierre, Ray R., Trassoudaine, Agnès, André, Yamina, Gil, Evelyne
Published in Crystal growth & design (05.04.2023)
Published in Crystal growth & design (05.04.2023)
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Journal Article
Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy
Chereau, Emmanuel, Dubrovskii, Vladimir G., Grégoire, Gabin, Avit, Geoffrey, Staudinger, Philipp, Schmid, Heinz, Bougerol, Catherine, Coulon, Pierre-Marie, Shields, Philip A., Trassoudaine, Agnès, Gil, Evelyne, LaPierre, Ray R., André, Yamina
Published in Crystal growth & design (07.06.2023)
Published in Crystal growth & design (07.06.2023)
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Journal Article
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Roche, Elissa, André, Yamina, Avit, Geoffrey, Bougerol, Catherine, Castelluci, Dominique, Réveret, François, Gil, Evelyne, Médard, François, Leymarie, Joël, Jean, Theo, Dubrovskii, Vladimir G, Trassoudaine, Agnès
Published in Nanotechnology (16.11.2018)
Published in Nanotechnology (16.11.2018)
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Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode
Mehdi, H., Réveret, F., Robert-Goumet, C., Bideux, L., Gruzza, B., Hoggan, P.E., Leymarie, J., Andre, Y., Gil, E., Pelissier, B., Levert, T., Paget, D., Monier, G.
Published in Applied surface science (30.03.2022)
Published in Applied surface science (30.03.2022)
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Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates
Hijazi, Hadi, Dubrovskii, Vladimir G, Monier, Guillaume, Gil, Evelyne, Leroux, Christine, Avit, Geoffrey, Trassoudaine, Agnès, Bougerol, Catherine, Castellucci, Dominique, Robert-Goumet, Christine, André, Yamina
Published in Journal of physical chemistry. C (23.08.2018)
Published in Journal of physical chemistry. C (23.08.2018)
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Journal Article
Compositional control of homogeneous InGaN nanowires with the In content up to 90
Zeghouane, Mohammed, Avit, Geoffrey, André, Yamina, Bougerol, Catherine, Robin, Yoann, Ferret, Pierre, Castelluci, Dominique, Gil, Evelyne, Dubrovskii, Vladimir G, Amano, Hiroshi, Trassoudaine, Agnès
Published in Nanotechnology (25.01.2019)
Published in Nanotechnology (25.01.2019)
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Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type?
Hijazi, Hadi, Monier, Guillaume, Gil, Evelyne, Trassoudaine, Agnès, Bougerol, Catherine, Leroux, Christine, Castellucci, Dominique, Robert-Goumet, Christine, Hoggan, Philip, André, Yamina, Isik Goktas, Nebile, Lapierre, Ray, Dubrovskii, Vladimir
Published in Nano letters (16.06.2019)
Published in Nano letters (16.06.2019)
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Journal Article
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
Zeghouane, Mohammed, Avit, Geoffrey, André, Yamina, Taliercio, Thierry, Ferret, Pierre, Gil, Evelyne, Castelluci, Dominique, Disseix, Pierre, Leymarie, Joel, Tournié, Eric, Trassoudaine, Agnès
Published in Crystal growth & design (01.04.2020)
Published in Crystal growth & design (01.04.2020)
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Journal Article
Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays
Grégoire, Gabin, Zeghouane, Mohammed, Goosney, Curtis, Goktas, Nebile Isik, Staudinger, Philipp, Schmid, Heinz, Moselund, Kirsten E, Taliercio, Thierry, Tournié, Eric, Trassoudaine, Agnès, Gil, Evelyne, LaPierre, Ray R, André, Yamina
Published in Crystal growth & design (01.09.2021)
Published in Crystal growth & design (01.09.2021)
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Journal Article
Dynamics of Gold Droplet Formation on SiO 2 /Si(111) Surface
Hijazi, Hadi, Leroy, Frédéric, Monier, Guillaume, Grégoire, Gabin, Gil, Evelyne, Trassoudaine, Agnès, Dubrovskii, Vladimir G., Castelluci, Dominique, Goktas, Nebile Isik, LaPierre, Ray R., André, Yamina, Robert-Goumet, Christine
Published in Journal of physical chemistry. C (04.06.2020)
Published in Journal of physical chemistry. C (04.06.2020)
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