Trap-state mapping to model GaN transistors dynamic performance
Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in Scientific reports (02.02.2022)
Published in Scientific reports (02.02.2022)
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Journal Article
Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT
Sun, Jinming, Haeberlen, Oliver, Ostermaier, Clemens, Prechtl, Gerhard, Tadikonda, Ramakrishna, Persson, Eric, Garg, Reenu, Imam, Mohamed, Khalil, Sameh, Charles, Alain
Published in AIP advances (01.05.2021)
Published in AIP advances (01.05.2021)
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Journal Article
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in IEEE electron device letters (01.05.2021)
Published in IEEE electron device letters (01.05.2021)
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Journal Article
Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress
Minetto, Andrea, Deutschmann, Bernd, Modolo, Nicola, Nardo, Arianna, Meneghini, Matteo, Zanoni, Enrico, Sayadi, Luca, Prechtl, Gerhard, Sicre, Sebastien, Haberlen, Oliver
Published in IEEE transactions on electron devices (01.11.2020)
Published in IEEE transactions on electron devices (01.11.2020)
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Journal Article
On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs
Modolo, Nicola, De Santi, Carlo, Baratella, Giulio, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs
Minetto, Andrea, Modolo, Nicola, Sayadi, Luca, Koller, Christian, Ostermaier, Clemens, Meneghini, Matteo, Zanoni, Enrico, Prechtl, Gerhard, Sicre, Sebastien, Deutschmann, Bernd, Haberlen, Oliver
Published in IEEE transactions on electron devices (01.10.2021)
Published in IEEE transactions on electron devices (01.10.2021)
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Journal Article
Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultrafast (10 V/Ns) On-Wafer Methodology
Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in IEEE journal of emerging and selected topics in power electronics (01.10.2022)
Published in IEEE journal of emerging and selected topics in power electronics (01.10.2022)
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Journal Article
Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors
Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in Semiconductor science and technology (01.01.2021)
Published in Semiconductor science and technology (01.01.2021)
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Journal Article
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
Modolo, Nicola, Meneghini, Matteo, Barbato, Alessandro, Nardo, Arianna, De Santi, Carlo, Meneghesso, Gaudenzio, Zanoni, Enrico, Sicre, Sebastien, Prechtl, Gerhard, Curatola, Gilberto
Published in Microelectronics and reliability (01.11.2020)
Published in Microelectronics and reliability (01.11.2020)
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Journal Article
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements
Nardo, Arianna, Meneghini, Matteo, Barbato, Alessandro, De Santi, Carlo, Meneghesso, Gaudenzio, Zanoni, Enrico, Sicre, Sebastien, Sayadi, Luca, Prechtl, Gerhard, Curatola, Gilberto
Published in Applied physics express (01.07.2020)
Published in Applied physics express (01.07.2020)
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Journal Article
Modeling Hot-Electron Trapping in GaN-based HEMTs
Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level
Modolo, Nicola, Minetto, Andrea, De Santi, Carlo, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
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Conference Proceeding