Smart mobile SoCs driving the semiconductor industry: Technology trend, challenges and opportunities
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A dual core oxide 8T SRAM cell with low Vccmin and dual voltage supplies in 45nm triple gate oxide and multi Vt CMOS for very high performance yet low leakage mobile SoC applications
Ping Liu, Wang, J, Phan, M, Garg, M, Zhang, R, Cassier, A, Chua-Eoan, L, Andreev, B, Weyland, S, Ekbote, S, Han, M, Fischer, J, Yeap, Geoffrey C.-F, Ping-Wei Wang, Li, Q, Hou, C S, Lee, S B, Wang, Y F, Lin, S S, Cao, M, Mii, Y J
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
Technology-design-manufacturing co-optimization for advanced mobile SoCs
Yeap, Geoffrey
Published in Proceedings of the IEEE 2014 Custom Integrated Circuits Conference (01.09.2014)
Published in Proceedings of the IEEE 2014 Custom Integrated Circuits Conference (01.09.2014)
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Conference Proceeding
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low- V MIN Applications
Chang, Tsung-Yung Jonathan, Chen, Yen-Huei, Chan, Wei-Min, Cheng, Hank, Wang, Po-Sheng, Lin, Yangsyu, Fujiwara, Hidehiro, Lee, Robin, Liao, Hung-Jen, Wang, Ping-Wei, Yeap, Geoffrey, Li, Quincy
Published in IEEE journal of solid-state circuits (01.01.2021)
Published in IEEE journal of solid-state circuits (01.01.2021)
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Journal Article
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications
Chang, Tsung-Yung Jonathan, Chen, Yen-Huei, Chan, Wei-Min, Cheng, Hank, Wang, Po-Sheng, Lin, Yangsyu, Fujiwara, Hidehiro, Lee, Robin, Liao, Hung-Jen, Wang, Ping-Wei, Yeap, Geoffrey, Li, Quincy
Published in IEEE journal of solid-state circuits (01.01.2021)
Published in IEEE journal of solid-state circuits (01.01.2021)
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Journal Article
Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology
Younghwi Yang, Juhyun Park, Seung Chul Song, Wang, Joseph, Yeap, Geoffrey, Seong-Ook Jung
Published in IEEE transactions on very large scale integration (VLSI) systems (01.11.2015)
Published in IEEE transactions on very large scale integration (VLSI) systems (01.11.2015)
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Journal Article
Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology
Younghwi Yang, Hanwool Jeong, Seung Chul Song, Wang, Joseph, Yeap, Geoffrey, Seong-Ook Jung
Published in IEEE transactions on circuits and systems. I, Regular papers (01.07.2016)
Published in IEEE transactions on circuits and systems. I, Regular papers (01.07.2016)
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A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology
Zhang, Nick, Kim, Young Suk, Hsu, Peter, Kim, Samsoo, Tao, Derek, Liao, Hung-Jen, Wang, P.W., Yeap, Geoffrey, Li, Quincy, Chang, Tsung-Yung Jonathan
Published in IEEE solid-state circuits letters (24.11.2023)
Published in IEEE solid-state circuits letters (24.11.2023)
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Journal Article
Low power technology/circuit co-development for advanced mobile devices
Yeap, Geoffrey
Published in 2010 IEEE International Conference on Integrated Circuit Design and Technology (01.06.2010)
Published in 2010 IEEE International Conference on Integrated Circuit Design and Technology (01.06.2010)
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Conference Proceeding
Variation-Aware Figure of Merit for Integrated Circuit in Near-Threshold Region
Hanwool Jeong, Younghwi Yang, Seung Chul Song, Wang, Joseph, Yeap, Geoffrey, Seong-Ook Jung
Published in IEEE transactions on electron devices (01.06.2015)
Published in IEEE transactions on electron devices (01.06.2015)
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Journal Article
A 4.24-GHz 128×256 SRAM Operating Double Pump Read Write Same Cycle in 5-nm Technology
Zhang, Nick, Kim, Young Suk, Hsu, Peter, Kim, Samsoo, Tao, Derek, Liao, Hung-Jen, Wang, P. W., Yeap, Geoffrey, Li, Quincy, Chang, Tsung-Yung Jonathan
Published in IEEE solid-state circuits letters (2024)
Published in IEEE solid-state circuits letters (2024)
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Journal Article
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology
Zhang, Nick, Kim, Young Suk, Hsu, Peter, Kim, Samsoo, Tao, Derek, Liao, Hung-Jen, Wang, P.W., Yeap, Geoffrey, Li, Quincy, Chang, Tsung-Yung Jonathan
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit
Younghwi Yang, Juhyun Park, Seung Chul Song, Wang, Joseph, Yeap, Geoffrey, Seong-Ook Jung
Published in IEEE transactions on circuits and systems. I, Regular papers (01.06.2015)
Published in IEEE transactions on circuits and systems. I, Regular papers (01.06.2015)
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Journal Article
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications
Chang, Jonathan, Chen, Yen-Huei, Chan, Gary, Cheng, Hank, Wang, Po-Sheng, Lin, Yangsyu, Fujiwara, Hidehiro, Lee, Robin, Liao, Hung-Jen, Wang, Ping-Wei, Yeap, Geoffrey, Li, Quincy
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
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Conference Proceeding
Improved device variability in scaled MOSFETs with deeply retrograde channel profile : RELIABILITY AND VARIABILITY OF DEVICES FOR CIRCUITS AND SYSTEMS
WOO, Jason, CHIEN, P. Y, YANG, Frank, SONG, S. C, CHIDAMBARAM, Chidi, WANG, Joseph, YEAP, Geoffrey
Published in Microelectronics and reliability (2014)
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Published in Microelectronics and reliability (2014)
Journal Article
OPTIMIZED STATIC RANDOM ACCESS MEMORY CELL
WANG PING-WEI, LIM KIAN-LONG, LIN SHIH-HAO, PAO CHIA-HAO, HUNG LIEN JUNG, LIN YU-KUAN, YANG ZHI QUAN, XU GUO XIU, GEOFFREY YEAP
Year of Publication 14.02.2022
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Year of Publication 14.02.2022
Patent
Improved device variability in scaled MOSFETs with deeply retrograde channel profile
Woo, Jason, Chien, P.Y., Yang, Frank, Song, S.C., Chidambaram, Chidi, Wang, Joseph, Yeap, Geoffrey
Published in Microelectronics and reliability (01.06.2014)
Published in Microelectronics and reliability (01.06.2014)
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