Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET
Cristoloveanu, S., Athanasiou, S., Bawedin, M., Galy, Ph
Published in IEEE electron device letters (01.02.2017)
Published in IEEE electron device letters (01.02.2017)
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Journal Article
A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters
Cristoloveanu, S., Lee, K.H., Parihar, M.S., El Dirani, H., Lacord, J., Martinie, S., Le Royer, C., Barbe, J.-Ch, Mescot, X., Fonteneau, P., Galy, Ph, Gamiz, F., Navarro, C., Cheng, B., Duan, M., Adamu-Lema, F., Asenov, A., Taur, Y., Xu, Y., Kim, Y-T., Wan, J., Bawedin, M.
Published in Solid-state electronics (01.05.2018)
Published in Solid-state electronics (01.05.2018)
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Journal Article
TLP/VFTLP investigation on eNVM 1T1R PCM in FD-SOI UTBB CMOS technology at room temperature
Galy, Ph, Jacquier, B., Sandrini, J., Arnaud, F.
Published in Microelectronics and reliability (01.09.2023)
Published in Microelectronics and reliability (01.09.2023)
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Journal Article
Experimental results on diodes and BIMOS ESD devices in 28 nm FD-SOI under TLP & TID radiation
Galy, Ph, Soto, F., Bourgeat, J., Jacquier, B., Kilchytska, V., Flandre, D.
Published in Microelectronics and reliability (01.11.2020)
Published in Microelectronics and reliability (01.11.2020)
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Journal Article
Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology
Athanasiou, S., Cristoloveanu, S., Galy, Ph
Published in 2015 International Conference on IC Design & Technology (ICICDT) (01.06.2015)
Published in 2015 International Conference on IC Design & Technology (ICICDT) (01.06.2015)
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Conference Proceeding
7-mm low-latency inter-chiplet serial link with silicon interposer
Tmimi, M., D'Amico, S., Duchamp, J-M., Ferrari, Ph, Galy, Ph
Published in 2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS) (01.08.2020)
Published in 2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS) (01.08.2020)
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Conference Proceeding
New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology
Galy, Ph, Bourgeat, J., Marin-Cudraz, D.
Published in 2014 IEEE International Conference on IC Design & Technology (01.05.2014)
Published in 2014 IEEE International Conference on IC Design & Technology (01.05.2014)
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Conference Proceeding
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
Cristoloveanu, S., Lee, K.H., Parihar, M.S., El Dirani, H., Lacord, J., Martinie, S., Le Royer, C., Barbe, J.-Ch, Mescot, X., Fonteneau, P., Galy, Ph, Gamiz, F., Navarro, C., Cheng, B., Duan, M., Adamu-Lema, F., Asenov, A., Taur, Y., Xu, Y., Kim, Y-T., Wan, J., Bawedin, M.
Published in Solid-state electronics (01.05.2018)
Published in Solid-state electronics (01.05.2018)
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Journal Article
Ultra-low power 1T-DRAM in FDSOI technology
El Dirani, H., Lee, K.H., Parihar, M.S., Lacord, J., Martinie, S., Barbe, J-Ch, Mescot, X., Fonteneau, P., Broquin, J.-E., Ghibaudo, G., Galy, Ph, Gamiz, F., Taur, Y., Kim, Y.-T., Cristoloveanu, S., Bawedin, M.
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
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Journal Article
New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode
Galy, Ph, Athanasiou, S., Cristoloveanu, S.
Published in 2015 International Semiconductor Conference (CAS) (01.10.2015)
Published in 2015 International Semiconductor Conference (CAS) (01.10.2015)
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Conference Proceeding
Journal Article
Symmetrical ESD protection for advanced CMOS technology dedicated to 100GHz RF application
Galy, Ph, Lim, T., Bourgeat, J., Jimenez, J., Heitz, B., Marin-Cudraz, D., Benech, Ph, Fournier, J.M.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Journal Article
ESD protection with BIMOS transistor for bulk & FDSOI advanced CMOS technology
Galy, Ph, Bourgeat, J., Lim, T., Fenouillet-Beranger, C., Golanski, D.
Published in CAS 2013 (International Semiconductor Conference) (01.10.2013)
Published in CAS 2013 (International Semiconductor Conference) (01.10.2013)
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Conference Proceeding
Reliability impact due to high current, lattice and hot carriers temperatures on [beta] super((2x2) matrix ESD power devices for advanced CMOS technologies)
Galy, Ph, Bourgeat, J, Jimenez, J, Jacquier, B, Marin-Cudraz, D, Dudit, S
Published in Microelectronics and reliability (01.11.2011)
Published in Microelectronics and reliability (01.11.2011)
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Journal Article