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"GALBIATI PAOLA"
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METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING CMOS AND HIGH-VOLTAGE ELECTRONIC DEVICES
by
GALBIATI
,
PAOLA
,
CONTIERO, CLAUDIO
,
ANDREINI, ANTONIO
Year of Publication
15.11.1989
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DISPOSITIVO INTEGRATO CONTENENTE STRUTTURE DI POTENZA FORMATE CON TRANSISTORI LDMOS COMPLEMENTARI, STRUTTURE CMOS E PNP VERTICALI CON AUMENTATA CAPACITA' DI SUPPORTARE UN'ALTA TENSIONE DI ALIMENTAZIONE
by
LUCIA ZULLINO
,
CLAUDIO CONTIERO
,
PAOLA GALBIATI
Year of Publication
14.06.1989
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PROCEDIMENTO AUTOALLINEATO PER LA FABBRICAZIONE DI CELLE DMOS DI PICCOLE DIMENSIONI E DISPOSITIVI MOS OTTENUTI MEDIANTE DETTO PROCEDIMENTO
by
CONTIERO CLAUDIO
,
GALBIATI PAOLA
,
ANDREINI ANTONIO
Year of Publication
01.03.1989
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INTEGRAZIONE MONOLITICA DI TRANSISTORI VDMOS DI POTERNZA ISOLATI AD ALTA PRESTAZIONE E DI TRANSISTORI MOS A CANALE P PER ALTA TENSIONE ASSIEME A TRANSISTORI CSMO, NPN, PNP E DIODI A BASSA PERDITA
by
CONTIERO CLAUDIO
,
GALBIATI PAOLA
,
ANDREINI ANTONIO
Year of Publication
02.02.1989
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Self-aligned process for fabricating small DMOS cells
by
CONTIERO; CLAUDIO
,
ANDREINI; ANTONIO
,
GALBIATI
;
PAOLA
Year of Publication
27.09.1988
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Monolithic integration of isolated, high performance, power vdmos transistors and of high voltage p-channel mos transistors together with cmos, npn, pnp transistors and low leakage diodes
by
GALBIATI
,
PAOLA
,
CONTIERO, CLAUDIO
,
ANDREINI, ANTONIO
Year of Publication
18.05.1988
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METHOD FOR MANUFACTURING INTEGRATED ELECTRONIC DEVICES, IN PARTICULAR HIGH VOLTAGE P-CHANNEL MOS TRANSISTORS
by
GALBIATI
,
PAOLA
,
CONTIERO, CLAUDIO
,
ANDREINI, ANTONIO
Year of Publication
02.03.1988
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HIGH VOLTAGE SEMICONDUCTOR INTEGRATED CIRCUIT
by
GALBIATI
,
PAOLA
,
CONTIERO, CLAUDIO
,
ANDREINI, ANTONIO
Year of Publication
27.01.1988
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Manufacturing integrated circuits containing P-channel MOS transistors and bipolar transistors utilizing boron and arsenic as dopants
by
CONTIERO; CLAUDIO
,
ANDREINI; ANTONIO
,
GALBIATI
;
PAOLA
Year of Publication
26.01.1988
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PROCEDIMENTO PER LA FABBRICAZIONE DI DISPOSITIVI ELETTRONICI INTEGRATI,IN PARTICOLARE TRANSISTORI MOS A CANALE P AD ALTA TENSIONE
by
CONTIERO CLAUDIO
,
GALBIATI PAOLA
,
ANDREINI ANTONIO
Year of Publication
07.01.1988
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SELF-ALIGNED PROCESS FOR FABRICATING SMALL SIZE DMOS CELLS AND MOS DEVICES OBTAINED BY MEANS OF SAID PROCESS
by
GALBIATI
,
PAOLA
,
CONTIERO, CLAUDIO
,
ANDREINI, ANTONIO
Year of Publication
07.01.1988
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Self-aligned process for fabricating small size DMOS cells and MOS devices obtained by means of said process
by
GALBIATI
,
PAOLA
,
CONTIERO, CLAUDIO
,
ANDREINI, ANTONIO
Year of Publication
04.11.1987
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Method for manufacturing semiconductor integrated circuits including cmos and high-voltage electronic devices
by
GALBIATI
,
PAOLA
,
CONTIERO, CLAUDIO
,
ANDREINI, ANTONIO
Year of Publication
30.09.1987
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High voltage semiconductor integrated circuit
by
GALBIATI
,
PAOLA
,
CONTIERO, CLAUDIO
,
ANDREINI, ANTONIO
Year of Publication
02.09.1987
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Method for manufacturing integrated electronic devices, in particular high voltage P-channel MOS transistors
by
GALBIATI
,
PAOLA
,
CONTIERO, CLAUDIO
,
ANDREINI, ANTONIO
Year of Publication
12.08.1987
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TENSIONE ASSIEME A TRANSISTORI INTEGRAZIONE MONOLITICA DI CMOS, NPN, PNP E DIODI A BASSA TRANSISTORI VDMOS DI POTERNZA PERDITA. ISOLATI AD ALTA PRESTAZIONE E DI TRANSISTORI MOS A CANALE P PER ALTA
by
CLAUDIO CONTIERO
,
ANTONIO ANDREINI
,
PAOLA GALBIATI
Year of Publication
10.11.1986
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PROCEDIMENTO PER LA FABBRICAZIONE DI CIRCUITI INTEGRATI A SEMICONDUTTORE INCLUDENTI DISPOSITIV CMOS E DISPOSITIVI ELETTRONICI AD ALTA TENSIONE
by
ANTONIO ANDREINI
,
CLAUDIO CONTIERO
,
PAOLA GALBIATI
Year of Publication
27.03.1986
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PROCEDIMENTO AUTOALLINEATO PER LA FABBRICAZIONE DI CELLE DMOS DI PICCOLE DIMENSIONI E DISPOSITIVI MOS OTTENUTI MEDIANTE DETTO PROCEDIMENTO
by
CLAUDIO CONTIERO
,
ANTONIO ANDREINI
,
PAOLA GALBIATI
Year of Publication
06.03.1986
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PROCEDIMENTO PER LA FABBRICAZIONEDI DI DISPOSITIVI ELETTRONICI INTEGRATI, IN PARTICOLARE TRANSISTORI MOS A CANALE P AD ALTA TENSIONE
by
CLAUDIO CONTIERO
,
ANTONIO ANDREINI
,
PAOLA GALBIATI
Year of Publication
24.01.1986
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DENSITA'.!CIRCUITO INTEGRATO A SEMICONDUTTORE, IN PARTICOLARE DEL TIPO COMPRENDENTE DISPOSITIVI AD ALTA TENSIONE E DISPOSITIVI DI ELABORAZIONE DI SEGNALE AD ALTA
by
CONTIERO CLAUDIO
,
GALBIATI PAOLA
,
ANDREINI ANTONIO
Year of Publication
24.01.1986
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