Three-stage InP JFET amplifier for receiver optoelectronic integrated circuits
Jeong, J., Vella-Coleiro, G.P., Kim, S.J., Eng, J.
Published in IEEE photonics technology letters (01.06.1990)
Published in IEEE photonics technology letters (01.06.1990)
Get full text
Journal Article
Monolithically integrated InGaAs PIN-InP JFET amplifier with high sensitivity
Kim, S.J., Guth, G., Vella-Coleiro, G.P., Seabury, C.W.
Published in IEEE transactions on electron devices (01.12.1988)
Published in IEEE transactions on electron devices (01.12.1988)
Get full text
Journal Article
Fully ion-implanted InP JFET with buried p-layer
Kim, S.J., Jeong, J., Vella-Coleiro, G.P., Smith, P.R.
Published in IEEE electron device letters (01.01.1990)
Published in IEEE electron device letters (01.01.1990)
Get full text
Journal Article
A low-power high-speed ion-implanted JFET for InP-based monolithic optoelectronic IC's
Kim, S.J., Wang, K.W., Vella-Coleiro, G.P., Lutze, J.W., Ota, Y., Guth, G.
Published in IEEE electron device letters (01.11.1987)
Published in IEEE electron device letters (01.11.1987)
Get full text
Journal Article
Monolithically integrated receiver front end: In/sub 0.53/Ga/sub 0.47/As p-i-n amplifier
Cheng, C.-L., Chang, R.P.H., Tell, B., Parker, S.M.Z., Ota, Y., Vella-Coleiro, G.P., Miller, R.C., Zilko, J.L., Kasper, B.L., Brown-Goebeler, K.F., Mattera, V.D.
Published in IEEE transactions on electron devices (01.09.1988)
Published in IEEE transactions on electron devices (01.09.1988)
Get full text
Journal Article
High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide
Seabury, C.W., Bylsma, R.B., Vella-Coleiro, G.P., Kim, S.J., Davisson, P.S., Yee, C.M.L., Eng, J., Deblis, D., Jeong, J., Jhee, Y.K.
Published in IEEE photonics technology letters (01.02.1991)
Published in IEEE photonics technology letters (01.02.1991)
Get full text
Journal Article
IIIA-8 monolithically integrated receiver front-end: In 0.53 Ga 0.47 As PIN-amplifier
Chu-Liang Cheng, Chang, R.P.H., Tell, B., Zima, S.M., Ota, Y., Vella-Coleiro, G.P., Miller, R.C., Zilko, J.L., Kasper, B.L., Brown-Goebeler, K.F., Mattera, V.D.
Published in IEEE transactions on electron devices (01.11.1987)
Published in IEEE transactions on electron devices (01.11.1987)
Get full text
Journal Article
Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier
Kim, S.J., Guth, G., Vella-Coleiro, G.P., Seabury, C.W., Sponsler, W.A., Rhoades, B.J.
Published in IEEE electron device letters (01.09.1988)
Published in IEEE electron device letters (01.09.1988)
Get full text
Journal Article
IIIA-8 monolithically integrated receiver front-end: In0.53Ga0.47As PIN-amplifier
Chu-Liang Cheng, Chang, R.P.H., Tell, B., Zima, S.M., Ota, Y., Vella-Coleiro, G.P., Miller, R.C., Zilko, J.L., Kasper, B.L., Brown-Goebeler, K.F., Mattera, V.D.
Published in IEEE transactions on electron devices (01.11.1987)
Published in IEEE transactions on electron devices (01.11.1987)
Get full text
Journal Article
GaAs MESFETs on InP substrates grown using chloride close-proximity reactor system
Jeong, J., Yee, C.M.L., Vella-Coleiro, G.P., Smith, P.R., Chu, S.N.G., Davisson, P.S., Paczkowski, J.P.
Published in IEEE electron device letters (01.07.1990)
Published in IEEE electron device letters (01.07.1990)
Get full text
Journal Article