A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology
Maejima, Hiroshi, Kanda, Kazushige, Fujimura, Susumu, Takagiwa, Teruo, Ozawa, Susumu, Sato, Jumpei, Shindo, Yoshihiko, Sato, Manabu, Kanagawa, Naoaki, Musha, Junji, Inoue, Satoshi, Sakurai, Katsuaki, Morozumi, Naohito, Fukuda, Ryo, Shimizu, Yuui, Hashimoto, Toshifumi, Xu Li, Shimizu, Yuuki, Abe, Kenichi, Yasufuku, Tadashi, Minamoto, Takatoshi, Yoshihara, Hiroshi, Yamashita, Takahiro, Satou, Kazuhiko, Sugimoto, Takahiro, Kono, Fumihiro, Abe, Mitsuhiro, Hashiguchi, Tomoharu, Kojima, Masatsugu, Suematsu, Yasuhiro, Shimizu, Takahiro, Imamoto, Akihiro, Kobayashi, Naoki, Miakashi, Makoto, Yamaguchi, Kouichirou, Bushnaq, Sanad, Haibi, Hicham, Ogawa, Masatsugu, Ochi, Yusuke, Kubota, Kenro, Wakui, Taichi, Dong He, Weihan Wang, Minagawa, Hiroe, Nishiuchi, Tomoko, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Koh, Feng Lu, Ramachandra, Venky, Rajendra, Srinivas, Choi, Steve, Payak, Keyur, Raghunathan, Namas, Georgakis, Spiros, Sugawara, Hiroshi, Seungpil Lee, Futatsuyama, Takuya, Hosono, Koji, Shibata, Noboru, Hisada, Toshiki, Kaneko, Tetsuya, Nakamura, Hiroshi
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01.02.2018)
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01.02.2018)
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