Fluoride Contamination Induced Film Formation in a Gate NiSi Line
Futase, Takuya, Tanimoto, Hisanori
Published in IEEE transactions on semiconductor manufacturing (01.08.2013)
Published in IEEE transactions on semiconductor manufacturing (01.08.2013)
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Journal Article
Soak on NiSi: Selective Formation of Pure Sub-Nanometer NiTi to Reduce Contact Resistance
Futase, T, Hashikawa, N, Yamamoto, H, Tanimoto, H
Published in IEEE transactions on semiconductor manufacturing (01.05.2011)
Published in IEEE transactions on semiconductor manufacturing (01.05.2011)
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Journal Article
Pattern-Independent PMD Layer Planarization by Controlling its Volume Before CMP
Kakegawa, Tomoyasu, Futase, Takuya
Published in IEEE transactions on semiconductor manufacturing (01.08.2015)
Published in IEEE transactions on semiconductor manufacturing (01.08.2015)
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Journal Article
Fluoride Contamination Induced NiSi2 Film Formation in a Gate NiSi Line
FUTASE, Takuya, TANIMOTO, Hisanori
Published in IEEE transactions on semiconductor manufacturing (01.08.2013)
Published in IEEE transactions on semiconductor manufacturing (01.08.2013)
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Conference Proceeding
Development of MIM/Ta2O5 capacitor process for 0.10-µm DRAM
Asano, Isamu, Nakamura, Yoshitaka, Hiratani, Masahiko, Nabatame, Toshihide, Iijima, Shinpei, Saeki, Tomonori, Futase, Takuya, Yamomoto, Satoshi, Saito, Tatsuyuki, Sekiguchi, Toshihiro
Published in Electronics & communications in Japan. Part 2, Electronics (01.02.2004)
Published in Electronics & communications in Japan. Part 2, Electronics (01.02.2004)
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Journal Article
Stress-induced voiding in nickel silicide
Futase, Takuya, Oashi, Toshiyuki, Maeda, Hitoshi, Inaba, Yutaka, Tanimoto, Hisanori
Published in Microelectronic engineering (01.06.2013)
Published in Microelectronic engineering (01.06.2013)
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Journal Article
Conference Proceeding